HBG010D360D GETEDZ | Alldatasheet
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HBG010D360D 1.0A 36kV Half Bridge High Voltage Rectifier Assembly GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086 -20-8184 9628 FAX:0086 -20-8184 9638 2019-03 1 / 2 INTRODUCE: HVGT Half Bridge high voltage silicon rectifier assembly is made of high quality silicon GPP chip and high reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers . FEATURES: 1. High reliability design. 2. High voltage design. 3. Power frequency ratio. 4. Conform to RoHS and SGS . 5. Epoxy resin molded in vacuumHave anticorrosion in the surface . APPLICATIONS: 1. High voltage generator. 2. Industrial microwave power supply. 3. High voltage rectifier used in electrostatic cleaning. MECHANICAL DATA: 1. Case: epoxy resin molding. 2. Terminal: screw holes M5. 3. Net weight: 145.0 grams (approx). SHAPE DISPLAY: SIZE: (Unit:mm) HVGT NAME : HVD-31 MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings ) Items Symbols Condition Data Value Units Repetitive Peak Renerse Voltage VRRM TA=25° C; IR=1.0uA 36 36 kV Peak Working Revere Voltage VRWM TA=25° C; IR=1.0uA 36 36 kV Non-Repetitive Peak Renerse Voltage VRSM TA=25° C; IR=1.0uA 40 40 kV Average Forward Current Maximum IFAVM TA=50°C; 50Hz Half-sine Wave; Resistance load 1.0 A Non-Repetitive Forward Surge Current IFSM TA=25°C; 50Hz Half-Sine Wave; 8.3mS 30 A Junction Temperature TJ 150 °C Allowable Operation Case Temperature Tc -40~+150 °C Storage Temperature TSTG -40~+150 °C ELECTRICAL CHARACTERISTICS: TA=25° C (Unless Otherwise Specified) Items Symbols Condition Data value Units Maximum Forward Voltage Drop VFM at 25° C; at IFAVM 64 64 V Maximum Reverse Current IR1 at 25° C; at VRRM 5.0 uA IR2 at 100°C; at VRRM 50 uA Maximum Reverse Recovery Time TRR at 25° C; IF=0.5IR; IR=IFAVM; IRR=0.25IR -- nS Junction Capacitance CJ at 25° C; VR=0V; f=1MHz -- pF
HBG010D360D 1.0A 36kV Half Bridge High Voltage Rectifier Assembly GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086 -20-8184 9628 FAX:0086 -20-8184 9638 2019-03 2 / 2 Forward Current Derating Curve 125 100 Average Forward 75 Current --% 50 0 25 50 75 100 125 150 175 (℃) Temperature Non-Repetitive Surge Current 100 Peak Forward Surge 50 Current 1 10 100 Cycles (50Hz) MARKING: Marking Type Code Cathode Mark HBG010D360D HBG010D360D HVGT PART NUMBER NOTE: Type Chip IF(AV) Frequency VRRM TRR HB G 010 D 360 D Half Bridge Series GPP Chip 1.0A D=Doubler. P=Positive Center Tap. N=Negative Center Cap. 36kV (U)75ns (G)100ns (D) Standard Recovery Time