HBD437D HSMC | Alldatasheet

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MICROELECTRONICS CORP. Spec. No. : HD200201 Issued Date : 2001.04.01 Revised Date : 2005.08.16 Page No. : 1/4 HBD437D HSMC Product Specification HBD437D COMPLEMENTARY SILICON POWER TRANSISTORS

Description

The HBD437D is silison epitaxial-base NPN power transistor in TO-126ML plastic package, intented for use in medium power linear and switching applications. The complementary PNP type is HBD438D. Absolute Maximum Ratings (TA=25°C) Symbol Parametor Value Unit VCBO Collector-Base Voltage (IE=0) 45 V VCES Collector-Emitter Voltage (VBE=0) 45 V VCEO Collector-Emitter Voltage (IB=0) 45 V VEBO Emitter-Base Voltage (IC=0) 5 V IC Collector Current 4 A ICM Collector Peak Current (t≤10ms) 7A IB Base Current 1 A TC=25°C 20 W PD Total Dissipation at TA=25°C 1.5 W Tstg Storage Temperature -55 to 150 °C TJ Max. Operating Junction Temperature 150 °C Thermal Data Rthj-case Thermal Resistance Junction-case Max. 5 °C/W Rthj-amb Thermal Resistance Junction-ambient Max. 83 °C/W Electrical Characteristics (TA=25°C, unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE=0) V CB=45V - - 100 uA ICES Collector Cut-off Current (VBE=0) V CE=45V - - 100 uA IEBO Emitter Cut-off Current (IC=0) V EB=5V - - 1 mA *VCEO(sus) Collector-Emitter Sustaining Voltage I C=100mA, IB=0 45 - - V *VCE(sat) Collector-Emitter Saturation Voltage I C=2A, IB=0.2A - 0.4 0.6 V IC=10mA,VCE=5V - 0.58 - V *VBE Base-Emitter Voltage IC=2A, VCE=1V - - 1.2 V IC=10mA, VCE=5V 30 130 - IC=0.5A, VCE=1V 85 140 -*hFE DC Current Gain IC=2A, VCE=1V 40 - - *hFE1/hFE2 Matched Pair I C=0.5A, VCE=1V - - 1.4 fT Transition Frequency I C=0.25A, VCE=1V 3 - - MHz *Pulse T est: Pulse Width ≤380us, Duty Cycle≤2% TO-126ML

MICROELECTRONICS CORP. Spec. No. : HD200201 Issued Date : 2001.04.01 Revised Date : 2005.08.16 Page No. : 2/4 HBD437D HSMC Product Specification Characteristics Curve Safe Operating Area 0.01 0.1 1 10 100 Forward Voltage-VCE (V) Collector Current-IC (A) 1ms 100ms 1s Current Gain & Collector Current 100 1000 1 10 100 1000 10000 Collector Current IC (mA) hFE hFE @ VCE=1V o C 75oC125oC Current Gain & Collector Current 100 1000 1 10 100 1000 10000 Collector Current IC (mA) hFE hFE @ VCE=5V 25oC 75oC 125oC Saturation Voltage & Collector Current 100 1000 1 10 100 1000 10000 Collector Current IC (mA) Saturation Voltage (mV) VCE(sat) @ IC=10IB 75oC 125 o C 25oC On Voltage & Collector Current 100 1000 10000 1 10 100 1000 10000 Collector Current IC (mA) On Voltage (mV) VBE(on) @ VCE=1V 125oC 75oC 25oC

MICROELECTRONICS CORP. Spec. No. : HD200201 Issued Date : 2001.04.01 Revised Date : 2005.08.16 Page No. : 3/4 HBD437D HSMC Product Specification TO-126ML Dimension Important Notice:

  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
  • HSMC reserves the right to make changes to its products without notice.
  • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Tel: 886-3-5983621~5 Fax: 886-3-5982931 D I E B G F A N C H 321 M J K L 3-Lead TO-126ML Plastic Package Marking: Control CodeDate Code HD 437 Pb Free Mark Pb-Free: " . " (Note) Normal: None Note: Green label is used for pb-free packing Pin Style: 1.Emitter 2.Collector 3.Base Material:
  • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM Min. Max. A 7.74 8.24 B 10.87 11.37 C 0.88 1.12 D 1.28 1.52 E 3.50 3.75 F 2.61 3.37 G1 3 - H 1.18 1.42 I 2.88 3.12 J 0.68 0.84 K - 2.30 L 3.44 3.70 M 1.88 2.14 N 0.50 0.51 *: Typical, Unit: mm

MICROELECTRONICS CORP. Spec. No. : HD200201 Issued Date : 2001.04.01 Revised Date : 2005.08.16 Page No. : 4/4 HBD437D HSMC Product Specification Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate (TL to TP)< 3 oC/sec <3 oC/sec Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) 100oC 150oC 60~120 sec 150oC 200oC 60~180 sec Tsmax to TL - Ramp-up Rate <3 oC/sec <3 oC/sec Time maintained above: - Temperature (TL) - Time (tL) 183oC 60~150 sec 217oC 60~150 sec Peak Temperature (TP) 240 oC +0/-5oC 260 oC +0/-5oC Time within 5oC of actual Peak Temperature (tP) 10~30 sec 20~40 sec Ramp-down Rate <6 oC/sec <6 oC/sec Time 25oC to Peak Temperature <6 minutes <8 minutes 3. Flow (wave) soldering (solder dipping) Products Peak temperature Dipping time Pb devices. 245oC ±5oC 5sec ±1sec Pb-Free devices. 260 oC +0/-5oC 5sec ±1sec Figure 1: Temperature profile tP tL Ramp-down Ramp-up Tsmax Tsmin Critical Zone TL to TP tS Preheat TL TP t 25oC to Peak Time Temperature