HBCA114ES6R CYSTEKEC | Alldatasheet

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Technical content

Features

  • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
  • The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input for PNP transistor, and negative biasing of the input for NPN transistor. They also have the advantage of almost completely eliminating parasitic effects.
  • Only the on/off conditions need to be set for operation, making device design easy.
  • One DTA114E chip and one DTC114E chip in a SOT-363 package.
  • Mounting by SOT-323 automatic mounting machines is possible.
  • Mounting cost and area can be cut in half.
  • Transistor elements are independent, eliminating interference Equivalent Circuit SOT-363R HBCA114ES6R RB1=10kΩ , RB2=10 kΩ RBE1=10kΩ , RBE2=10 kΩ TR1 TR2 RB1 RBE2 RBE1 RB2

CYStech Electronics Corp. Spec. No. : C152S6R Issued Date : 2003.05.28 Revised Date : 2005.01.14 Page No. : 2/6 HBCA114ES6R CYStek Product Specification Absolute Maximum Ratings (Ta=25℃) Limits Parameter Symbol Tr1(NPN) Tr2(PNP) Unit Supply V oltage V CC 50 -50 V Input V oltage V IN -10~+40 -40~+10 V IO 50 -50 mA Output Current IO(max.) 100 -100 mA Total Power Dissipation Pd 200 (Note) mW Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note : 150mW per element must not be exceeded. Characteristics (Ta=25℃)

  • Tr1(NPN) Parameter Symbol Min. Typ. Max. Unit Test Conditions VI(off) - - 0.5 V V CC=5V , IO=100µA Input V oltage VI(on) 3 - - V V O=0.3V , IO=10mA Output V oltage V O(on) - - 0.3 V I O/II=10mA/0.5mA Input Current I I - - 0.88 mA V I=5V Output Current I O(off) - - 0.5 µA V CC=50V , VI=0V DC Current Gain G I 30 - - - V O=5V , IO=5mA Input Resistance R 1 7 10 13 kΩ - Resistance Ratio R 2/R1 0.8 1 1.2 - - Transition Frequency f T - 250 - MHz V CE=10V , IC=5mA, f=100MHz * * Transition frequency of the device
  • Tr2(PNP) Parameter Symbol Min. Typ. Max. Unit Test Conditions VI(off) - - -0.5 V V CC=-5V , IO=-100µA Input V oltage VI(on) -3 - - V V O=-0.3V , IO=-10mA Output V oltage V O(on) - - -0.3 V I O/II=-10mA/-0.5mA Input Current I I - - -0.88 mA V I=-5V Output Current I O(off) - - -0.5 µA V CC=-50V , VI=0V DC Current Gain G I 30 - - - V O=-5V , IO=-5mA Input Resistance R 1 7 10 13 kΩ - Resistance Ratio R 2/R1 0.8 1 1.2 - - Transition Frequency f T - 250 - MHz V CE=-10V , IC=-5mA, f=100MHz * * Transition frequency of the device

CYStech Electronics Corp. Spec. No. : C152S6R Issued Date : 2003.05.28 Revised Date : 2005.01.14 Page No. : 3/6 HBCA114ES6R CYStek Product Specification Characteristic Curves

  • Tr1(NPN) Current Gain vs Output Current 100 1000 1 10 100 Output Current ---Io(mA) Current Gain---GI Vo=5V Output Voltage vs Output Current 100 1000 11 0 1 0 0 Output Current ---Io(mA) Output Voltage---V O(on)(mV) Io / Ii=20 Input Voltage vs Output Current (ON characteristics) 0.1 1 10 100 Output Current --- Io(mA) Input Voltage --- V I(on)(V) Vo=0.3V Output Current vs Input Voltage (OFF characteristics) 0.1 100 0.1 1 10 Input Voltage --- VI(off)(V) Output Current --- Io(mA) Vcc=5V

CYStech Electronics Corp. Spec. No. : C152S6R Issued Date : 2003.05.28 Revised Date : 2005.01.14 Page No. : 4/6 HBCA114ES6R CYStek Product Specification

  • Tr2(PNP) Current Gain vs Output Current 100 1000 0 . 111 0 1 0 0 Output Current---IO(mA) Current Gain---GI Vo = 5V Output Voltage vs Output Current 0.01 0.1 11 0 1 0 0 Output Current---IO(mA) Output Voltage---VO(ON)(V) Io / Ii = 20 Input Voltage vs Output Current(ON characteristics) 0.1 100 0.1 1 10 100 Output Current---IO(mA) Input Voltage---VI(ON)(V) Vo = 0.3V Output Current vs Input Voltage(OFF characteristics) 0.01 0.1 0 0.5 1 1.5 2 2.5 3 Input Voltage---VI(OFF)(V) Output Current---IO(mA) VCC = 5 V Power Derating Curves 100 150 200 250 0 50 100 150 200 Ambient Temperature ---TA(℃) Power Dissipation---PD(mW) Dual Single

CYStech Electronics Corp. Spec. No. : C152S6R Issued Date : 2003.05.28 Revised Date : 2005.01.14 Page No. : 5/6 HBCA114ES6R CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C152S6R Issued Date : 2003.05.28 Revised Date : 2005.01.14 Page No. : 6/6 HBCA114ES6R CYStek Product Specification SOT-363R Dimension *:Typical H - 0.004 - 0.1 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material :

  • Lead : 42 Alloy ; solder plating
  • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. 6-Lead SOT-363R Plastic Surface Mounted Package CYStek Package Code: S6R Style: Pin 1. Emitter1 (E1) Pin 2. Base1 (B1) Pin 3. Collector2 (C2) Pin 4. Emitter2 (E2) Pin 5. Base2 (B2) Pin 6. Collector1 (C1) Marking: