HBC114ES6R CYSTEKEC | Alldatasheet

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Technical content

Features

  • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
  • The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects.
  • Only the on/off conditions need to be set for operation, making device design easy.
  • Two DTC114E chips in a SOT-363 package.
  • Mounting by SOT-323 automatic mounting machines is possible.
  • Mounting cost and area can be cut in half.
  • Transistor elements are independent, eliminating interference
  • Complements the HBA114ES6R Equivalent Circuit SOT-363R HBC114ES6R RB1=10kΩ , RB2=10 kΩ RBE1=10kΩ , RBE2=10 kΩ TR1 TR2 RB1 RBE2 RBE1 RB2

CYStech Electronics Corp. Spec. No. : C351S6R Issued Date : 2003.05.22 Revised Date : Page No. : 2/4 HBC114ES6R CYStek Product Specification Absolute Maximum Ratings (Each Transistor, Ta=25℃) Parameter Symbol Limits Unit Supply V oltage V CC 50 V Input V oltage V IN -10~+40 V IO 50 mA Output Current IO(max.) 100 mA Power Dissipation Pd 200 *1 mW Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note:*1.150mW per element must not be exceeded. Characteristics (Each Transistor, Ta=25℃) Parameter Symbol Min. Typ. Max. Unit Test Conditions VI(off) - - 0.5 V V CC=5V , IO=100µA Input V oltage VI(on) 3 - - V V O=0.3V , IO=10mA Output V oltage V O(on) - 0.1 0.3 V I O/II=10mA/0.5mA Input Current I I - - 0.88 mA V I=5V Output Current I O(off) - - 0.5 µA V CC=50V , VI=0V DC Current Gain G I 30 - - - V O=5V , IO=5mA Input Resistance R 1 7 10 13 kΩ - Resistance Ratio R 2/R1 0.8 1 1.2 - - Transition Frequency f T - 250 - MHz V CE=10V , IC=5mA, f=100MHz* * Transition frequency of the device

CYStech Electronics Corp. Spec. No. : C351S6R Issued Date : 2003.05.22 Revised Date : Page No. : 3/4 HBC114ES6R CYStek Product Specification Characteristic Curves DC Current Gain vs Output Current 100 1000 1 10 100 Output Current ---Io(mA) Current Gain---HFE Vo=5V Output Voltage vs Output Current 100 1000 1 10 100 Output Current ---Io(mA) Output Voltage---Vo(on)(mV) Io/Ii=20 Input Voltage vs Output Current (ON Characteristics) 0.1 1 10 100 Output Current --- Io(mA) Input Voltage --- Vi(on)(V) Vo=0.3V Output Current vs Input Voltage (OFF Characteristics) 0.1 100 0.1 1 10 Input Voltage --- Vi(off)(V) Output Current --- Io(mA) Vcc=5V Power Derating Curves 100 150 200 250 0 50 100 150 200 Ambient Temperature---TA(℃) Power Dissipation---(mW) Dual Single

CYStech Electronics Corp. Spec. No. : C351S6R Issued Date : 2003.05.22 Revised Date : Page No. : 4/4 HBC114ES6R CYStek Product Specification SOT-363R Dimension *:Typical H - 0.004 - 0.1 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material :

  • Lead : 42 Alloy ; solder plating
  • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. 6-Lead SOT-363R Plastic Surface Mounted Package CYStek Package Code: S6R Style: Pin 1. Emitter1 (E1) Pin 2. Base1 (B1) Pin 3. Collector2 (C2) Pin 4. Emitter2 (E2) Pin 5. Base2 (B2) Pin 6. Collector1 (C1) Marking: