HB52RF648DC-B

HB52RF648DC-B ELPIDA | Alldatasheet

Document overview

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Technical content

Features

• Fully compatible with: JEDEC standard outline 8-byte S.O.DIMM
• 144-pin Zig Zag Dual tabs socket type (dual lead out)  Outline: 67.60 mm (Length) × 31.75 mm (Height) × 3.80 mm (Thickness)  Lead pitch: 0.80 mm
• 3.3 V power supply
• Clock frequency: 133/100 MHz (max)
• LVTTL interface
• Data bus width: × 64 Non parity
• Single pulsed RAS
• 4 Banks can operates simultaneously and independently
• Burst read/write operation and burst read/single write operation capability
• Programmable burst length : 1/2/4/8

HB52RF648DC-B, HB52RD648DC-B Data Sheet E0083H40

• 2 variations of burst sequence  Sequential  Interleave
• Programmable CE latency: 2/3
• Byte control by DQMB
• Refresh cycles: 8192 refresh cycles/64 ms
• 2 variations of refresh  Auto refresh  Self refresh
• Low self refresh current: HB52RF648DC-xxBL (L-version) : HB52RD648DC-xxBL (L-version)

Ordering Information

Type No. Frequency CE latency Package Contact pad HB52RF648DC-75B* HB52RF648DC-75BL* 1

133 MHz

Small outline DIMM (144-pin) Gold HB52RD648DC-A6B* 1 HB52RD648DC-A6BL* 1 HB52RD648DC-B6B* 2 HB52RD648DC-B6BL* 2

100 MHz

Notes: 1. 100 MHz operation at CE latency = 2. 2. 66 MHz operation at CE latency = 2.

HB52RF648DC-B, HB52RD648DC-B Data Sheet E0083H40 Pin Arrangement Front Side Back Side 2pin 60pin 62pin 144pin 1pin 59pin 61pin 143pin Front side Back side Pin No. Signal n ame Pin No. Signal n ame Pin No. Signal n ame Pin No. Signal n ame 1V SS 73 NC 2 V SS 74 CK1

3 DQ0 75 V SS 4 DQ32 76 V SS

5 DQ1 77 NC 6 DQ33 78 NC

7 DQ2 79 NC 8 DQ34 80 NC

9 DQ3 81 V CC 10 DQ35 82 V CC

11 V CC 83 DQ16 12 V CC 84 DQ48

13 DQ4 85 DQ17 14 DQ36 86 DQ49

15 DQ5 87 DQ18 16 DQ37 88 DQ50

17 DQ6 89 DQ19 18 DQ38 90 DQ51

19 DQ7 91 V SS 20 DQ39 92 V SS

21 V SS 93 DQ20 22 V SS 94 DQ52

23 DQMB0 95 DQ21 24 DQMB4 96 DQ53

25 DQMB1 97 DQ22 26 DQMB5 98 DQ54

27 V CC 99 DQ23 28 V CC 100 DQ55

29 A0 101 V CC 30 A3 102 V CC

31 A1 103 A6 32 A4 104 A7

33 A2 105 A8 34 A5 106 BA0

35 V SS 107 V SS 36 V SS 108 V SS

37 DQ8 109 A9 38 DQ40 110 BA1

39 DQ9 111 A10 (AP) 40 DQ41 112 A11

HB52RF648DC-B, HB52RD648DC-B Data Sheet E0083H40 Front side Back side Pin No. Signal n ame Pin No. Signal n ame Pin No. Signal n ame Pin No. Signal n ame

41 DQ10 113 V CC 42 DQ42 114 V CC

43 DQ11 115 DQMB2 44 DQ43 116 DQMB6

45 V CC 117 DQMB3 46 V CC 118 DQMB7

47 DQ12 119 V SS 48 DQ44 120 V SS

49 DQ13 121 DQ24 50 DQ45 122 DQ56

51 DQ14 123 DQ25 52 DQ46 124 DQ57

53 DQ15 125 DQ26 54 DQ47 126 DQ58

55 V SS 127 DQ27 56 V SS 128 DQ59

57 NC 129 V CC 58 NC 130 V CC

59 NC 131 DQ28 60 NC 132 DQ60

61 CK0 133 DQ29 62 CKE0 134 DQ61

63 V CC 135 DQ30 64 V CC 136 DQ62

65 RE 137 DQ31 66 CE 138 DQ63

67 W 139 V SS 68 CKE1 140 V SS

69 S0 141 SDA 70 A12 142 SCL

71 S1 143 V CC 72 NC 144 V CC

HB52RF648DC-B, HB52RD648DC-B Data Sheet E0083H40 Pin Description Pin name Function A0 to A12 Address input  Row address A0 to A12  Column address A0 to A9 BA0/BA1 Bank select address DQ0 to DQ63 Data-input/output S0/S1 Chip select RE Row address asserted bank enable CE Column address asserted W Write enable DQMB0 to DQMB7 Byte input/output mask CK0/CK1 Clock input CKE0/CKE1 Clock enable SDA Data-input/output for serial PD SCL Clock input for serial PD VCC Power supply VSS Ground NC No connection

HB52RF648DC-B, HB52RD648DC-B Data Sheet E0083H40 Serial PD Matrix*1 Byte No. Function described Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value Comments

0 Number of bytes used by

1 Total SPD memory size 000010000 8 256 byte

2 Memory type 000001000 4 SDRAM

3 Number of row addresses bits 000011010 D 1 3

4 Number of column addresses

000010100 A 1 0

5 Number of banks 000000100 2 2

6 Module data width 010000004 0 6 4

7 Module data width (continued) 000000000 0 0 ( + )

8 Module interface signal levels 000000010 1 LVTTL

9 SDRAM cycle time

(highest CE latency) (-75) 7.5 ns 011101017 5 C L = 3 (-A6/B6) 10 ns 10100000A 0

10 SDRAM access from Clock

(highest CE latency) (-75) 5.4 ns 010101005 4 (-A6/B6) 6 ns 011000006 0

11 Module configuration type 000000000 0 Non parity

12 Refresh rate/type 100000108 2 Normal

(7.8125 µs) Self refresh

13 SDRAM width 000010000 8 × 8

14 Error checking SDRAM width 000000000 0 —

15 SDRAM device attributes:

minimum clock delay for back- to-back random column addresses 000000010 1 1 C L K

16 SDRAM device attributes:

000011110 F 1 , 2 , 4 , 8

17 SDRAM device attributes:

18 SDRAM device attributes:

000001100 6 2 , 3

19 SDRAM device attributes:

HB52RF648DC-B, HB52RD648DC-B Data Sheet E0083H40 Byte No. Function described Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value Comments

20 SDRAM device attributes:

21 SDRAM module attributes 000000000 0 Non buffer

22 SDRAM device attributes:

000011100 E V CC ± 10%

23 SDRAM cycle time

(2nd highest CE latency) (-75/A6)10 ns 10100000A 0 C L = 2 (-B6) 15 ns 11110000F 0

24 SDRAM access from Clock

(2nd highest CE latency) (-75/A6) 6 ns 011000006 0 (-B6) 9 ns 100100009 0

25 SDRAM cycle time

(3rd highest CE latency) Undefined 000000000 0

26 SDRAM access from Clock

(3rd highest CE latency) Undefined 000000000 0

27 Minimum row precharge time 000101001 4 2 0 n s

28 Row active to row active min

(-75)

000011110 F 1 5 n s

(-A6/B6) 000101001 4 2 0 n s

29 RE to CE delay min 000101001 4 2 0 n s

30 Minimum RE pulse width

(-75)

001011012 D 4 5 n s

(-A6/B6) 001100103 2 5 0 n s

31 Density of each bank on

32 Address and command signal

(-75) 000101011 5 1.5 ns (-A6/B6) 001000002 0 2.0 ns

33 Address and command signal

(-75) 000010000 8 0.8 ns (-A6/B6) 000100001 0 1.0 ns

34 Data signal input setup time

(-75) 000101011 5 1.5 ns (-A6/B6) 001000002 0 2.0 ns

HB52RF648DC-B, HB52RD648DC-B Data Sheet E0083H40 Byte No. Function described Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value Comments

35 Data signal input hold time

(-75) 000010000 8 0.8 ns (-A6/B6) 000100001 0 1.0 ns 36 to 61 Superset information 000000000 0 Future use 62 SPD data revision code 000100101 2 Rev. 1.2B

63 Checksum for bytes 0 to 62

(-75) 010100115 3 8 3 (-A6) 10111010B A 1 8 6 (-B6) 001110103 A 5 8

64 Manuf act ur er’ s JEDEC ID c o d e 000001110 7 HITACHI

65 to 71 Manuf act ur er’ s JEDEC ID c o d e 000000000 0 8bit code)

73 Manufacturer ’s part number 010010004 8 H

74 Manufacturer ’s part number 010000104 2 B

75 Manufacturer ’s part number 001101013 5 5

76 Manufacturer ’s part number 001100103 2 2

77 Manufacturer ’s part number 010100105 2 R

78 Manufacturer ’s part number

(-75) 010001104 6 F (-A6/B6) 010001004 4 D

79 Manufacturer ’s part number 001101103 6 6

80 Manufacturer ’s part number 001101003 4 4

81 Manufacturer ’s part number 001110003 8 8

82 Manufacturer ’s part number 010001004 4 D

83 Manufacturer ’s part number 010000114 3 C

84 Manufacturer ’s part number 001011012 D 

85 Manufacturer ’s part number

(-75) 001101113 7 7 (-A6) 010000014 1 A (-B6) 010000104 2 B

HB52RF648DC-B, HB52RD648DC-B Data Sheet E0083H40 Byte No. Function described Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value Comments

86 Manufacturer ’s part number

(-75) 001101013 5 5 (-A6/B6) 001101103 6 6

87 Manufacturer ’s part number 010000104 2 B

88 Manufacturer ’s part number

(-xxB) 001000002 0 (Space) (-xxBL) 010011004 C L

89 Manufacturer ’s part number 001000002 0 (Space)

90 Manufacturer ’s part number 001000002 0 (Space)

(BCD) (BCD) 95 to 98 Assembly serial number * 3

126 Intel specification frequency 011001006 4 100 MHz

127 Intel specification CE# latency

(-75/A6) 11001111C F C L = 2 , 3 (-B6) 11001101C D C L = 3 Notes: 1. All serial PD data are not protected. 0: Serial data, “driven Low”, 1: Serial data, “driven High”. These SPD are based on Rev. 1.2B Specification. 2. Byte72 is manufacturing location code. (ex: In case of Japan, byte72 is 4AH. 4AH shows “J” on ASCII code.) 3. Bytes 95 through 98 are assembly serial number. 4. All bits of 99 through 125 are not defined (“1” or “0”).

HB52RF648DC-B, HB52RD648DC-B Data Sheet E0083H40 Block Diagram DQMB0 I/O0 to I/O7 I/O0 to I/O7 DQM DQM DQ0 to DQ7 DQ8 to DQ15 DQMB1 N0, N1 N2, N3 N4, N5 N6, N7 N8, N9 N10, N11 N12, N13 N14, N15 DQMB4 DQ32 to DQ39 DQ40 to DQ47 DQMB5 CS WE WECS D4D0 I/O0 to I/O7 I/O0 to I/O7 DQM DQM CS CS W DQMB2 I/O0 to I/O7 I/O0 to I/O7 DQM DQM DQ16 to DQ23 DQ24 to DQ31 DQMB3 DQMB6 DQ48 to DQ55 DQ56 to DQ63 DQMB7 CS CS D6D2 I/O0 to I/O7 I/O0 to I/O7 DQM DQM CS CS D13 D12 I/O0 to I/O7 I/O0 to I/O7 DQM DQM CS CS D15 D14 I/O0 to I/O7 I/O0 to I/O7 DQM DQM CS CS I/O0 to I/O7 I/O0 to I/O7 DQM DQM CS CS D11 I/O0 to I/O7 I/O0 to I/O7 DQM DQM CS CS D10 WE WE WE WEWE WE WE WEWE WE WE WE WE WE RAS (D0 to D15) CAS (D0 to D15) A0 to A12 Ax (D0 to D15) CKE1 CKE (D8 to D15) CLK0 CLK (D0, D4, D8, D12) CLK (D1, D5, D9, D13) VCC VCC (D0 to D15) VSS VSS (D0 to D15) C0 to C15 Serial PD SDA VSS SCL SDASCL RE CE BAx (D0 to D15) CKE0 CKE (D0 to D7) BA0, BA1 * D0 to D15 : HM5225805 U0 : 2-kbit EEPROM C0 to C15 : 0.1 µF N0 to N15 : Network resistors (10 Ω ) CLK1 CLK (D2, D6, D10, D14) CLK (D3, D7, D11, D15)

HB52RF648DC-B, HB52RD648DC-B Data Sheet E0083H40 Absolute Maximum Ratings Parameter Symbol Value Unit Note Voltage on any pin relative to VSS VT –0.5 to VCC + 0.5 (≤ 4.6 (max)) Supply voltage relative to VSS VCC –0.5 to +4.6 V 1 Short circuit output current Iout 50 mA Power dissipation P T 8.0 W Operating temperature Topr 0 to +65 °C Storage temperature Tstg –55 to +125 °C Note: 1. Respect to VSS . DC Operating Conditions (Ta = 0 to +65°C) Parameter Symbol Min Max Unit Notes Supply voltage V CC 3.0 3.6 V 1, 2 VSS 00V3 Input high voltage V IH 2.0 V CC + 0.3 V 1, 4 Input low voltage V IL –0.3 0.8 V 1, 5 Ambient illuminance —— 100 lx Notes: 1. All voltage referred to VSS 2. The supply voltage with all VCC pins must be on the same level. 3. The supply voltage with all VSS pins must be on the same level. 4. VIH (max) = VCC + 2.0 V for pulse width ≤ 3 ns at VCC . 5. VIL (min) = VSS – 2.0 V for pulse width ≤ 3 ns at VSS .

HB52RF648DC-B, HB52RD648DC-B Data Sheet E0083H40 DC Characteristics (Ta = 0 to +65˚C, VCC , VCC Q = 3.3 V ± 0.3 V, VSS, VSS Q = 0 V) HB52RF648DC/HB52RD648DC -75 -A6 -B6 Parameter Symbol Min Max Min Max Min Max Unit Test conditions Notes Operating current (CE latency = 2) ICC1 — 1120 — 1000 — 840 mA Burst length = 1 tRC = min 1, 2, 3 (CE latency = 3) ICC1 — 1120 — 1000 — 1000 mA Standby current in power down ICC2P — 48 — 48 — 48 mA CKE = V IL, tCK = 12 ns Standby current in power down (input signal stable) I CC2PS — 32 — 32 — 32 mA CKE = V IL, tCK = ∞ 7 Standby current in non power down ICC2N — 320 — 320 — 320 mA CKE, S = VIH, tCK = 12 ns Active standby current in power down ICC3P — 64 — 64 — 64 mA CKE = V IL, tCK = 12 ns 1, 2, 6 Active standby current in non power down ICC3N — 480 — 480 — 480 mA CKE, S = VIH, tCK = 12 ns 1, 2, 4 Burst operating current (CE latency = 2) I CC4 — 1040 — 1040 — 840 mA t CK = min, BL = 4 1, 2, 5 (CE latency = 3) ICC4 — 1320 — 1040 — 1040 mA Refresh current I CC5 — 2000 — 2000 — 2000 mA t RC = min 3 Self refresh current ICC6 — 48 — 48 — 48 mA V IH ≥ VCC – 0.2 V VIL ≤ 0.2 V Self refresh current (L-version) ICC6 — 32 — 32 — 32 mA Input leakage current ILI –10 10 –10 10 –10 10 µA 0 ≤ Vin ≤ VCC Output leakage current ILO –10 10 –10 10 –10 10 µA 0 ≤ Vout ≤ VCC DQ = disable Output high voltage VOH 2.4 — 2.4 — 2.4 — VI OH = –4 mA Output low voltage VOL — 0.4 — 0.4 — 0.4 V I OL = 4 mA Notes: 1. ICC depends on output load condition when the device is selected. ICC (max) is specified at the output open condition. 2. One bank operation. 3. Input signals are changed once per one clock. 4. Input signals are changed once per two clocks. 5. Input signals are changed once per four clocks. 6. After power down mode, CK0/CK1 operating current. 7. After power down mode, no CK0/CK1 operating current. 8. After self refresh mode set, self refresh current.

HB52RF648DC-B, HB52RD648DC-B Data Sheet E0083H40 Capacitance (Ta = 25°C, VCC = 3.3 V ± 0.3 V) Parameter Symbol Max Unit Notes Input capacitance (Address) C IN 90 pF 1, 2, 4 Input capacitance (RE, CE, W)C IN 90 pF 1, 2, 4 Input capacitance (S0/S1, CK0/CK1, CKE0/CKE1) C IN 60 pF 1, 2, 4 Input capacitance (DQMB) C IN 30 pF 1, 2, 4 Input/Output capacitance (DQ) C I/O 27 pF 1, 2, 3, 4 Notes: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method. 2. Measurement condition: f = 1 MHz, 1.4 V bias, 200 mV swing. 3. DQMB = V IH to disable Data-out. 4. This parameter is sampled and not 100% tested.

HB52RF648DC-B, HB52RD648DC-B Data Sheet E0083H40 AC Characteristics (Ta = 0 to +65°C, VCC , VCC Q = 3.3 V ± 0.3 V, VSS, VSS Q = 0 V) HB52RF648DC/HB52RD648DC -75 -A6 -B6 Parameter Symbol PC100 Symbol Min Max Min Max Min Max Unit Notes System clock cycle time (CE latency = 2) t CK Tclk 10 — 10 — 15 — ns 1 (CE latency = 3) t CK Tclk 7.5 — 10 — 10 — ns CK high pulse width t CKH Tch 2.5 — 3 — 3 — ns 1 CK low pulse width t CKL Tcl 2.5 — 3 — 3 — ns 1 Access time from CK (CE latency = 2) t AC Tac — 6 — 6 — 8 ns 1, 2 (CE latency = 3) t AC Tac — 5.4 — 6 — 6n s Data-out hold time t OH Toh 2.7 — 3 — 3 — ns 1, 2 CK to Data-out low impedance tLZ 2 — 2 — 2 — ns 1, 2, 3 CK to Data-out high impedance tHZ — 5.4 — 6 — 6 ns 1, 4 Input setup time t AS , tCS , tDS , tCES Tsi 1.5 — 2 — 2 — ns 1, 5, 6 CKE setup time for power down exit tCESP Tpde 1.5 — 2 — 2 — ns 1 Input hold time t AH , tCH , tDH , tCEH Thi 0.8 — 1 — 1 — ns 1, 6 Ref/Active to Ref/Active command period tRC Trc 67.5 — 70 — 70 — ns 1 Active to Precharge command period tRAS Tras 45 120000 50 120000 50 120000 ns 1 Active command to column command (same bank) tRCD Trcd 20 — 20 — 20 — ns 1 Precharge to active command period tRP Trp 20 — 20 — 20 — ns 1 Write recovery or data-in to precharge lead time tDPL Tdpl 15 — 20 — 20 — ns 1 Active (a) to Active (b) command period tRRD Trrd 15 — 20 — 20 — ns 1 Transition time (rise and fall) tT 15 1 51 5n s Refresh period t REF — 64 — 64 — 64 ms

HB52RF648DC-B, HB52RD648DC-B Data Sheet E0083H40 Notes: 1. AC measurement assumes tT = 1 ns. Reference level for timing of input signals is 1.5 V. 2. Access time is measured at 1.5 V. Load condition is CL = 50 pF. 3. tLZ (min) defines the time at which the outputs achieves the low impedance state. 4. tHZ (max) defines the time at which the outputs achieves the high impedance state. 5. tCES defines CKE setup time to CK rising edge except power down exit command. Test Conditions

• Input and output timing reference levels: 1.5 V
• Input waveform and output load: See following figures tT 2.4 V 0.4 V0.8 V

2.0 Vinput

HB52RF648DC-B, HB52RD648DC-B Data Sheet E0083H40 Relationship Between Frequency and Minimum Latency HB52RF648DC/ HB52RD648DC Parameter -75 -A6/B6 Frequency (MHz) 133 100 tCK (ns) Symbol PC100 Symbol 7.5 10 Notes Active command to column command (same bank) l RCD 321 Active command to active command (same bank) lRC 97= [ l RAS + lRP ] Active command to precharge command (same bank) l RAS 651 Precharge command to active command (same bank) lRP 321 Write recovery or data-in to precharge command (same bank) lDPL Tdpl 2 2 1 Active command to active command (different bank) lRRD 221 Self refresh exit time l SREX Tsrx 1 1 2 Last data in to active command (Auto precharge, same bank) lAPW Tdal 5 4 = [l DPL + lRP ] Self refresh exit to command input l SEC 97= [ l RC ] Precharge command to high impedance (CE latency = 2) l HZP Troh 2 2 (CE latency = 3) l HZP Troh 3 3 Last data out to active command (Auto precharge, same bank) lAPR 11 Last data out to precharge (early precharge) (CE latency = 2) l EP –1 –1 (CE latency = 3) l EP –2 –2 Column command to column command l CCD Tccd 1 1 Write command to data in latency l WCD Tdwd 0 0 DQMB to data in l DID Tdqm 0 0 DQMB to data out l DOD Tdqz 2 2 CKE to CK disable l CLE Tcke 1 1 Register set to active command l RSA Tmrd 1 1

HB52RF648DC-B, HB52RD648DC-B Data Sheet E0083H40 HB52RF648DC/ HB52RD648DC Parameter -75 -A6/B6 Frequency (MHz) 133 100 tCK (ns) Symbol PC100 Symbol 7.5 10 Notes S to command disable l CDD 00 Power down exit to command input l PEC 11 Notes: 1. lRCD to lRRD are recommended value. 2. Be valid [DESL] or [NOP] at next command of self refresh exit. 3. Except [DESL] and [NOP]

HB52RF648DC-B, HB52RD648DC-B Data Sheet E0083H40 Pin Functions CK0/CK1 (input pin): CK is the master clock input to this pin. The other input signals are referred at CK rising edge. S0/S1 (input pin): When S is Low, the command input cycle becomes valid. When S is High, all inputs are ignored. However, internal operations (bank active, burst operations, etc.) are held. RE, CE and W (input pins): Although these pin names are the same as those of conventional DRAM modules, they function in a different way. These pins define operation commands (read, write, etc.) depending on the combination of their voltage levels. For details, refer to the command operation section. A0 to A12 (input pins): Row address (AX0 to AX12) is determined by A0 to A12 level at the bank active command cycle CK rising edge. Column address (AY0 to AY9) is determined by A0 to A9 level at the read or write command cycle CK rising edge. And this column address becomes burst access start address. A10 defines the precharge mode. When A10 = High at the precharge command cycle, both banks are precharged. But when A10 = Low at the precharge command cycle, only the bank that is selected by BA0/BA1 (BA) is precharged. BA0/BA1 (input pin): BA0/BA1 is a bank select signal (BA). The memory array is divided into bank0, bank1, bank2 and bank3. If BA0 is Low and BA1 is Low, bank0 is selected. If BA0 is High and BA1 is Low, bank1 is selected. If BA0 is Low and BA1 is High, bank2 is selected. If BA0 is High and BA1 is High, bank3 is selected. CKE0, CKE1 (input pin): This pin determines whether or not the next CK is valid. If CKE is High, the next CK rising edge is valid. If CKE is Low, the next CK rising edge is invalid. This pin is used for power- down mode, clock suspend mode and self refresh mode. DQMB0 to DQMB7 (input pins): Read operation: If DQMB is High, the output buffer becomes High-Z. If the DQMB is Low, the output buffer becomes Low-Z (The latency of DQMB during reading is 2 clocks). Write operation: If DQMB is High, the previous data is held (the new data is not written). If DQMB is Low, the data is written (The latency of DQMB during writing is 0 clock). DQ0 to DQ63 (DQ pins): Data is input to and output from these pins. V CC (power supply pins): 3.3 V is applied. V SS (power supply pins): Ground is connected. Detailed Operation Part Refer to the HM5225165B/HM5225805B/HM5225405B-75/A6/B6 datasheet (E0082H).

HB52RF648DC-B, HB52RD648DC-B Data Sheet E0083H40 Physical Outline 144 1.00 ± 0.10 Detail A

0.25 Max

2.55 Min

0.60 ± 0.05 0.80 2-R2.00 3.70 23.20 4.60 2.10 32.80 4.00 ± 0.10

3.80 Max

(Datum -A-) 1.50 ± 0.10 4.00 ± 0.10 (DATUM -A-) Detail B R0.752.5

2.00 Min

(back) 2R3.00 Min

4.00 Min

3.20 Min

3.30 23.20 4.60 2.50 32.80 (Datum -A-) 31.75 20.00 67.60 AB Component area (front) Unit:mm ECA-TS2-0044-01

HB52RF648DC-B, HB52RD648DC-B Data Sheet E0083H40 Cautions 1. Elpida Memory, Inc. neither warrants nor grants licenses of any rights of Elpida Memory, Inc.’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Elpida Memory, Inc. bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Elpida Memory, Inc. makes every attempt to ensure that its products are of high quality and reliability. However, contact Elpida Memory, Inc. before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Elpida Memory, Inc. particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Elpida Memory, Inc. bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Elpida Memory, Inc. product does not cause bodily injury, fire or other consequential damage due to operation of the Elpida Memory, Inc. product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Elpida Memory, Inc.. 7. Contact Elpida Memory, Inc. for any questions regarding this document or Elpida Memory, Inc. semiconductor products. © Hitachi, Ltd., 2000