H603AL

H603AL HSMC | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 5

Technical content

MICROELECTRONICS CORP. Spec. No. : Preliminary Data Issued Date : 1998.07.01 Revised Date : 1999.08.01 Page No. : 1/5 HSMC Product Specification H603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor

Description

This very high density process has been especially tailored to minimize on- state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC/DC converters and other battery powered circuits where fast switching, low in- line power loss, and resistance to transients are needed. Absolute Maximum Ratings (Ta=25°C)

• Maximum Temperatures
• Maximum Power Dissipation
• Maximum Voltages and Currents

Electrical Characteristics

• Off Characteristics Symbol Parameter Condition Min Typ Max Unit BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V IDSS Zero Gate Voltage Drain Current V DS=30V, VGS=0V - - 10 uA +IGSS Gate-Body Leakage, Forward V GS=20V, VDS=0V - - 100 nA -IGSS Gate-Body Leakage, Reverse V GS=-20V, VDS=0V - - -100 nA
• On Characteristics VDS=VGS, ID=250uA 1.1 - 3VGS(TH) Gate Threshold Voltage VDS=VGS, ID=10mA 1.4 - 3 V VGS=10V, VDS=10V 60 - -IDS(on) On-State Drain Current VGS=4.5V, VDS=10V 15 - - A gFS Forward Transconductance V DS=10V, ID=25A - 26 - S
• Dynamic Characteristic Ciss Input Capacitance - 1100 - pF Coss Output Capacitance - 600 - pF Crss Reverse Transfer Capacitance VDS=15V, VGS=0V f=1.0Mhz - 180 - pF

MICROELECTRONICS CORP. Spec. No. : Preliminary Data Issued Date : 1998.07.01 Revised Date : 1999.08.01 Page No. : 2/5 HSMC Product Specification

• Switching Characteristics Symbol Parameter Condition Min Typ Max Unit Turn-On Delay Time - - 30 nsT(on) Turn-On Rise Time - - 110 ns Turn-Off Delay Time - - 150 nsT(off) Turn-Off Fall Time VDS=15V, ID=25A VGS=10V, RGEN=24Ω - - 130 ns Qg Total Gate Charge - - 45 nC Qgs Gate-Source Charge - - 10 nC Qgd Gate-Drain Charge VDS=10V, ID=25A, VGS=10V - - 10 nC
• Drain-Source Diode Characteristics And Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current -- 2 5 AVSD Drain-Source Diode Forward Voltage V GS=0V, IS=25A -- 1 . 3 V Characteristics Curve On-Region Characteristic 100 012345 Drain-Source Voltage (V) Drain-Source Current (A) VGS=10V 8V 6V7V 4.5V On-Resistance Variation With Gate Voltage & Drain Current 0.5 1.0 1.5 2.0 2.5 3.0 0 2 04 06 08 0 Drain Current (A) Normalized Drain-Source On- Resistance 5 V 4.5V VGS= 4V 10V On Resistance Variation & Temperature 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 25 50 75 100 125 150 Junction Temperature (°C) Normalized Drain-Source On-Resistance ID=25A VGS=10V On-Resistance Variation & Drain Current & Temperature 0.5 1.5 2.5 02 0 4 0 6 0 8 0 Drain Current (A) Normalized Drain-Source On- Resistance VGS=10V TJ=125°C TJ=25°C

MICROELECTRONICS CORP. Spec. No. : Preliminary Data Issued Date : 1998.07.01 Revised Date : 1999.08.01 Page No. : 3/5 HSMC Product Specification Drain Current Variation & Gate Voltage & Temperature 0123456 Gate-Source Voltage (V) Drain Current (A) TJ=125°C TJ= 25°C Sub-Threshold Drain Current Variation & Gate Voltage & Temperature 0.01 0.02 0.03 0.04 0.05 0.06 Gate-Source Voltage (V) Drain Current (A) TJ=125°C TJ=25°C Gate Threshold Variation & Temperature 0.8 0.9 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 25 50 75 100 125 150 Junction Temperature (°C) Gate-Source Threshold Voltage (V) ID=10mA ID= 250uA ID=1mA Capacitance Characteristics 500 1000 1500 2000 0 5 10 15 20 25 30 Drain-Source Voltage (V) Capacitance (pF) Ciss Crss Coss Breakdown Voltage Variation & Temperature 0.98 1.02 1.04 1.06 1.08 1.1 25 50 75 100 125 150 Junction Temperature (°C) Normalized Drain-Source Breakdown Voltage Body Diode Forward Voltage Variation & Current & Temperature 0.1 100 Body Diode Forward Voltage (V) Reverse Drain Current (A) TJ=125°C TJ= 25°C

MICROELECTRONICS CORP. Spec. No. : Preliminary Data Issued Date : 1998.07.01 Revised Date : 1999.08.01 Page No. : 4/5 HSMC Product Specification Trancient Thermal Response Curve 0.01 0.1 0.1 1 10 100 1000 Time (ms) Normalized Effective Transient Thermal Resistance 0.01 0.1 0.05 0.02 0.2 0.5 Single Pulse RθJC(t) = r(t) * RθJC(t) RθJC =2.5 °C / W P(pk) TJ-TC=P* RθJC(t) Duty Cycle,D=t1/t2 Transductance Variation & Drain Current & Temperature 0 1 02 03 04 05 0 Drain Current (A) Transconductance (S) TJ=25°C TJ=125°C Maximum Safe Operating Area 100 0.1 1 10 100 Drain-Source Voltage (V) Drain-Source Current (A)VGS=20V Single Pulse TC=25°C Rds(on) Line Dc 100ms 10ms 1ms 1us

MICROELECTRONICS CORP. Spec. No. : Preliminary Data Issued Date : 1998.07.01 Revised Date : 1999.08.01 Page No. : 5/5 HSMC Product Specification TO-220AB Dimension *:Typical Notes : 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997. 2.Controlling dimension : millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material :

• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory : Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454 Tel : 886-3-5983621~5 Fax : 886-3-5982931 Tel : 886-3-5977061 Fax : 886-3-5979220 A B E G I KM OP C N H D Style : Pin 1.Gate 2.Drain 3.Source 3-Lead TO-220AB Plastic Package Marking : HSMC Logo Part Number Date Code Product Series Rank