H50N03E

H50N03E HSMC | Alldatasheet

Document overview

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• PDF pages: 5

Technical content

Features

• RDS(on)=11mΩ @VGS=10V, ID=30A
• RDS(on)=18mΩ @VGS=4.5V, ID=30A
• Advanced trench process technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for DC/DC Converters and Motor Drivers
• Fully Characterized Avalanche Voltage and Current
• Improved Shoot-Through FOM Maximum Ratings & Thermal Characteristics (TA=25oC unless otherwise noted) Parameter Symbol Value Units Drain-Source Voltage V DS 25 V Gate-Source Voltage V GS ±20 V Continuous Drain Current I D 50 A Pulsed Drain Current *1 IDM 200 A Maximum Power Dissipation @ TC=25oCP D 70 W Operating Junction and Storage Temperature Range T J,Tstg -55 to 150 oC Avalanche Energy with Single Pulse ID=35A, VDD=20V, L=0.14mH EAS 300 mJ Junction-to-Case Thermal Resistance RθJC 2.1 OC/W Junction-to-Ambient Thermal Resistance(PCB mounted)*2 RθJA 55 OC/W *1: Maximum DC current limited by the package. *2: 1-in2 2oz Cu PCB board H50N03E Pin Assignment Switching Test Circuit Switching Waveforms 1 2 3 Tab G D S VIN VOUT VDD RG VGEN Pulse Width 50% 50% 90% 10%Input, VIN 90% 90 % 10%Output, VOUT tr ton td(on) 10% td(off) toff Inverted tf 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Internal Schematic Diagram G D S

MICROELECTRONICS CORP. Spec. No. : MOS200519 Issued Date : 2005.12.01 Revised Date : 2005.12.16 Page No. : 2/5 H50N03E HSMC Product Specification

ELectrical Characteristics

Characteristic Symbol Test Condition Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage BV DSS VGS=0V, ID=250uA 25 - - V VGS=4.5V, ID=30A - - 18 Drain-Source On-State Resistance R DS(on) VGS=10V, ID=30A - - 11 mΩ Gate Threshold Voltage V GS(th) VDS=VGS, ID=250uA 1 1.6 3 V Zero Gate Voltage Drain Current I DSS VDS=24V, VGS=0V - - 1 uA Gate Body Leakage I GSS VGS=±20V, VDS=0V -- ±100 nA Gate Resistance R g VDS=0V, VGS=1V at 1MHz - 1 - Ω Forward Transconductance g fs VDS=10V, ID=35A - 6 - S Dynamic Total Gate Charge Q g - 18.4 - Gate-Source Charge Q gs -3 . 5 7- Gate-Drain Charge Q gd VDS=15V, ID=35A, VGS=10V -2 . 9- nC Turn-On Delay Time td(on) - 11.7 - Turn-On Rise Time tr - 3.87 - Turn-Off Delay Time td(off) - 32.13 - Turn-Off Fall Time tf VDD=15V, RL=15Ω , ID=1A VGEN=10V, RG=24Ω -5 . 4- nS Input Capacitance C iss - 1176.3 - Output Capacitance C oss - 268.43 - Reverse Transfer Capacitance C rss VDS=15V, VGS=0V, f=1MHz - 142.67 - pF Source-Drain Diode Max. Diode Forward Current I S -- 3 5 A Diode Forward Voltage V SD IS=20A, VGS=0V - 0.87 1.5 V NOTE: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%

MICROELECTRONICS CORP. Spec. No. : MOS200519 Issued Date : 2005.12.01 Revised Date : 2005.12.16 Page No. : 3/5 H50N03E HSMC Product Specification Characteristics Curve Fig.1 Output Characteristic 012345 VDS, Drain-to-Source Voltage (V) ID, Drain-to-Source Current (A) VGS=5.0V,6.0V,10.0V 3.5V 3.0V 4.0V 4.5V Fig.2 Transfer Characteristic 2 2.5 3 3.5 4 4.5 5 VGS, Gate-to-Source Voltage (V) ID, Drain Source Current (A) VDS=10V TJ=125oC 25oC -55 o C Fig.5 On Resistance & Junction Temperature 0.6 0.8 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (oC) RDS(ON), On-Resistance (Normalized)…. VGS=10V ID=30A Fig.6 Capacitance 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 VDS, Drain-to-Source Voltage (V) RDS(ON), On-Resistance (mohm) Ciss f=1MHz VGS=0V Coss, Crss Fig.3 On Resistance & Drain Current 02 0 4 0 6 0 8 0 ID, Drain Current (A) RDS(ON), On-Resistance (mohm) VGS=4.5V VGS=10.0V Fig.4 On Resistance & Gate to Source Voltage 2468 1 0 VGS, Gate-to-Source Voltage (V) RDS(ON), On-Resistance (mohm) ID=30A TJ =25oC 125oC

MICROELECTRONICS CORP. Spec. No. : MOS200519 Issued Date : 2005.12.01 Revised Date : 2005.12.16 Page No. : 4/5 H50N03E HSMC Product Specification TO-220AB Dimension Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Tel: 886-3-5983621~5 Fax: 886-3-5982931 A B E G I KM OP C N H D Tab F JL Marking: Control CodeDate Code H Pb Free Mark Pb-Free: " . " (Note) Normal: None E Note: Green label is used for pb-free packing Pin Style: 1.Gate 2 & Tab.Drain 3.Source Material:
• Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 3-Lead TO-220AB Plastic Package DIM Min. Max. A 5.58 7.49 B 8.38 8.90 C 4.40 4.70 D 1.15 1.39 E 0.35 0.60 F 2.03 2.92 G 9.66 10.28 H - *16.25 I- * 3 . 8 3 J 3.00 4.00 K 0.75 0.95 L 2.54 3.42 M 1.14 1.40 N- * 2 . 5 4 O 12.70 14.27 P 14.48 15.87 *: Typical, Unit: mm

MICROELECTRONICS CORP. Spec. No. : MOS200519 Issued Date : 2005.12.01 Revised Date : 2005.12.16 Page No. : 5/5 H50N03E HSMC Product Specification Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate (TL to TP)< 3 oC/sec <3 oC/sec Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) 100oC 150oC 60~120 sec 150oC 200oC 60~180 sec Tsmax to TL - Ramp-up Rate <3 oC/sec <3 oC/sec Time maintained above: - Temperature (T - Time (tL) 183oC 60~150 sec 217oC 60~150 sec Peak Temperature (TP) 240 oC +0/-5oC 260 oC +0/-5oC Time within 5oC of actual Peak Temperature (tP) 10~30 sec 20~40 sec Ramp-down Rate <6 oC/sec <6 oC/sec Time 25oC to Peak Temperature <6 minutes <8 minutes 3. Flow (wave) soldering (solder dipping) Products Peak temperature Dipping time Pb devices. 245oC ±5oC 5sec ±1sec Pb-Free devices. 260 oC +0/-5oC 5sec ±1sec Figure 1: Temperature profile tP tL Ramp-down Ramp-up Tsmax Tsmin Critical Zone TL to TP tS Preheat TL TP t 25oC to Peak Time Temperature