H40T120

IHW40T120_08 INFINEON | Alldatasheet

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Power Semiconductors 1 Rev. 2.3 Sep 08 Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

• Short circuit withstand time – 10 µs
• Designed for : - Soft Switching Applications - Induction Heating
• TrenchStop® and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in V CE(sat)
• Very soft, fast recovery anti-parallel EmCon ™ HE diode
• Low EMI
• Qualified according to JEDEC 1 for target applications
• Application specific optimisation of inverse diode
• •Pb-free lead plating; RoHS compliant Type VCE I C VCE(sat),Tj=25°C Tj,max Marking Package IHW40T120 1200V 40A 1.8V 150°C H40T120 PG-TO247-3 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DC collector current TC = 25°C TC = 100°C IC Pulsed collector current, tp limited by Tjmax ICpuls 105 Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C - 105 Diode forward current TC = 25°C TC = 100°C IF 19.8 Diode pulsed current, tp limited by Tjmax IFpuls 47 A Diode surge non repetitive current, tp limited by Tjmax TC = 25°C, tp = 10ms, sine halfwave TC = 25°C, tp ≤ 2.5µs, sine halfwave TC = 100°C, tp ≤ 2.5µs, sine halfwave IFSM 200 160 A Gate-emitter voltage VGE ±20 V Short circuit withstand time2) VGE = 15V, VCC ≤ 1200V, Tj ≤ 150°C tSC 10 µs Power dissipation, TC = 25°C Ptot 270 W Operating junction temperature Tj -40...+150 Storage temperature Tstg -55...+150

1 J-STD-020 and JESD-022

2) Allowed number of short circuits: <1000; time between short circuits: >1s. G C E PG-TO-247-3

Power Semiconductors 2 Rev. 2.3 Sep 08 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260

Power Semiconductors 3 Rev. 2.3 Sep 08 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction – case RthJC 0.45 Diode thermal resistance, junction – case RthJCD 1.1 Thermal resistance, junction – ambient RthJA 40 K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Value Parameter Symbol Conditions min. Typ. max. Unit Static Characteristic Collector-emitter breakdown voltage V(BR)CES VGE =0V, IC =1.5mA 1200 - - Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC =40A Tj =25 °C Tj =125 °C Tj =150 °C 1.8 2.1 2.3 2.3 Diode forward voltage VF VGE =0V, IF =18A Tj =25 °C Tj =125 °C Tj =150 °C 1.65 1.7 1.7 2.15 Gate-emitter threshold voltage VGE(th) IC =1.5mA, VCE =VGE 5.0 5.8 6.5 V Zero gate voltage collector current ICES VCE =1200V , VGE =0V Tj =25 °C Tj =150 °C 0.4 4.0 mA Gate-emitter leakage current IGES VCE =0V, VGE =20V - - 600 nA Transconductance gfs VCE =20V, IC =40A - 21 - S Integrated gate resistor RGint 6 Ω Dynamic Characteristic Input capacitance Ciss - 2500 - Output capacitance Coss - 130 - Reverse transfer capacitance Crss VCE =25V, VGE =0V, f=1MHz - 110 - pF Gate charge QGate VCC =960V, IC =40A VGE =15V - 203 - nC Internal emitter inductance measured 5mm (0.197 in.) from case LE - 13 - nH Short circuit collector current1) IC(SC) VGE =15V, tSC ≤ 10 µ s VCC = 600V, Tj = 25 °C - 210 - A 1) Allowed number of short circuits: <1000; time between short circuits: >1s.

Power Semiconductors 4 Rev. 2.3 Sep 08 Switching Characteristic, Inductive Load, at Tj=25 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 48 - Rise time tr - 34 - Turn-off delay time td(off) - 480 - Fall time tf - 70 - ns Turn-on energy Eon - 3.3 - Turn-off energy Eoff - 3.2 - Total switching energy Ets Tj =25 °C, VCC =600V, IC =40A, VGE =0/15V, RG =15 Ω , Lσ 2) =180nH, Cσ 2) =39pF Energy losses include “tail” and diode reverse recovery. - 6.5 - mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr - 195 - ns Diode reverse recovery charge Qrr - 1880 - nC Diode peak reverse recovery current Irrm Tj =25 °C, VR =800V, I F =18A, di F /dt =800A/ µ s - 20.2 - A Switching Characteristic, Inductive Load, at Tj=150 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 52 - Rise time tr - 40 - Turn-off delay time td(off) - 580 - Fall time tf - 120 - ns Turn-on energy Eon - 5.0 - Turn-off energy Eoff - 5.4 - Total switching energy Ets Tj =150 °C VCC =600V, IC =40A, VGE =0/15V, RG = 15 Ω , Lσ 1) =180nH, Cσ 1) =39pF Energy losses include “tail” and diode reverse recovery. - 10.4 - mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr - 300 ns Diode reverse recovery charge Qrr - 3540 nC Diode peak reverse recovery current Irrm Tj =150 °C VR =800V, I F =18A, di F /dt =800A/ µ s - 25.3 A 2) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E. 1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.

Power Semiconductors 12 Rev. 2.3 Sep 08 5.44 0.55 6.04 5.49 1.68 3.68 4.17 20.82 16.25 15.70 1.05 3.50 19.80 13.10 MIN 1.90 4.90 2.27 1.07 1.85 1.90 0.238 0.216 0.066 0.145 0.164 0.075 0.820 0.640 0.618 0.022 0.193 0.089 0.042 0.073 0.041 0.075 0.138 0.780 0.516 0.68 6.30 6.00 17.65 2.60 5.10 14.15 3.70 21.10 16.03 20.31 1.35 4.47 2.41 5.16 2.53 1.33 2.11 MAX 2.16 0.027 0.214 0.248 0.236 0.695 0.557 0.102 0.201 0.831 0.631 0.053 0.146 0.799 0.176 MIN MAX 0.095 0.203 0.099 0.052 0.083 0.085 7.5mm 5 5 17-12-2007 Z8B00003327 2.87 2.87 0.113 0.113 3.38 3.13 0.133 0.123 M M PG-TO247-3

Power Semiconductors 13 Rev. 2.3 Sep 08 Figure A. Definition of switching times Figure B. Definition of switching losses I rrm 90% I rrm 10% I rrm di /dt F t rr I F i,v tQ S Q F t S t F V R di /dt rr Q= Q Q rr S F t= t trr S F + Figure C. Definition of diodes switching characteristics p(t) 12 n T( t )j n n τ TC rr r r rr Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Lσ =180nH and Stray capacity Cσ =39pF.

Power Semiconductors 14 Rev. 2.3 Sep 08 Published by Infineon Technologies AG

81726 Munich, Germany

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