IHW40N60RF_15 INFINEON | Alldatasheet

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Technical content

Rev.2.6,2015-01-26 ReverseconductingIGBT Features:

  • Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly
  • TRENCHSTOPTMtechnologyapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowVCEsat
  • LowEMI
  • QualifiedaccordingtoJESD-022fortargetapplications
  • Pb-freeleadplating;RoHScompliant
  • CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ Applications:
  • Inductivecooking
  • Inverterizedmicrowaveovens
  • Resonantconverters
  • Softswitchingapplications G C E G C E KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package IHW40N60RF 600V 40A 1.85V 175°C H40RF60 PG-TO247-3

Rev.2.6,2015-01-26 TableofContents

Rev.2.6,2015-01-26 MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 600 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C IC 80.0 40.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 120.0 A Turn off safe operating area VCE≤600V,Tvj≤175°C,tp=1µs - 120.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C IF 80.0 40.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 120.0 A Gate-emitter voltage VGE ±20 V PowerdissipationTC=25°C PowerdissipationTC=100°C Ptot 305.0 152.5 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s 260 °C Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Symbol Conditions Max.Value Unit Characteristic IGBT thermal resistance, junction - case Rth(j-c) 0.49 K/W Diode thermal resistance, junction - case Rth(j-c) 0.49 K/W Thermal resistance junction - ambient Rth(j-a) 40 K/W

Rev.2.6,2015-01-26 ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value min. typ. max. Parameter Symbol Conditions Unit StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA 600 - - V Collector-emitter saturation voltage VCEsat VGE=15.0V,IC=40.0A Tvj=25°C Tvj=175°C 1.85 2.30 2.40 V Diode forward voltage VF VGE=0V,IF=40.0A Tvj=25°C Tvj=175°C 1.75 2.00 2.20 V Gate-emitter threshold voltage VGE(th) IC=0.58mA,VCE=VGE 4.1 4.9 5.7 V Zero gate voltage collector current ICES VCE=600V,VGE=0V Tvj=25°C Tvj=175°C 40.0 3000.0 µA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=40.0A - 24.0 - S Integrated gate resistor rG none Ω ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value min. typ. max. Parameter Symbol Conditions Unit DynamicCharacteristic Input capacitance Cies - 2400 - Output capacitance Coes - 88 - Reverse transfer capacitance Cres - 68 - VCE=25V,VGE=0V,f=1MHz pF Gate charge QG VCC=480V,IC=40.0A, VGE=15V - 220.0 - nC Internal emitter inductance measured 5mm (0.197 in.) from case LE - 13.0 - nH SwitchingCharacteristic,InductiveLoad Value min. typ. max. Parameter Symbol Conditions Unit IGBTCharacteristic,atTvj=25°C Turn-off delay time td(off) - 175 - ns Fall time tf - 14 - ns Turn-off energy Eoff - 0.56 - mJ Tvj=25°C, VCC=400V,IC=40.0A, VGE=0.0/15.0V, RG(on)=5.6Ω ,RG(off)=5.6Ω , Lσ=90nH,Cσ=67pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery.

Rev.2.6,2015-01-26 SwitchingCharacteristic,InductiveLoad Value min. typ. max. Parameter Symbol Conditions Unit IGBTCharacteristic,atTvj=125°C Turn-off delay time td(off) - 205 - ns Fall time tf - 23 - ns Turn-off energy Eoff - 0.79 - mJ Tvj=125°C, VCC=400V,IC=40.0A, VGE=0.0/15.0V, RG(on)=5.6Ω ,RG(off)=5.6Ω , Lσ=90nH,Cσ=67pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery.

Rev.2.6,2015-01-26 PG-TO247-3

Rev.2.6,2015-01-26 t a b td(off) tf trtd(on) 90% IC 10% IC 90% IC 10% VGE 10% IC t 90% VGE t t 90% VGE VGE(t) t t tt1 t4 2% IC 10% VGE 2% VCE t2 t3 E t t V I toff = x x d CE C E t t V I ton = x x d CE C CC dI /dtF dI I,V Figure A. Figure B. Figure C. Definition of diode switching characteristics Figure E. Dynamic test circuit Figure D. I (t)C Parasitic inductance L , parasitic capacitor C , relief capacitor C , (only for ZVT switching) s s r t t t Q Q Q rr a b rr a b = + = + Qa Qb V (t)CE VGE(t) I (t)C V (t)CE

Rev. 2.6, 2015-01-26

Revision History

Revision: 2015-01-26, Rev. 2.6 Previous Revision Revision Date Subjects (major changes since last revision) 0.1 2009-06-15 - 0.2 2010-03-02 - 2.3 2010-03-02 - 2.4 2013-12-10 New value ICES max limit at 175°C 2.5 2014-03-12 Storage temp -55...+150°C 2.6 2015-01-26 Minor changes We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG

81726 Munich, Germany

81726 München, Germany

© 2015 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.