H3055LJ HSMC | Alldatasheet

Document overview

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Technical content

Features

  • RDS(on)=45mΩ @VGS=2.5V, ID=5.2A; RDS(on)=35mΩ @VGS=4.5V, ID=6A
  • High Density Cell Design for Ultra Low On-Resistance
  • High Power and Current Handing Capability
  • Fully Characterized Avalanche Voltage and Current
  • Ideal for Li ion Battery Pack Applications

Applications

  • Battery Protection
  • Load Switch
  • Power Management Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±12 V ID Drain Current (Continuous) 13 A IDM Drain Current (Pulsed) *1 30 A Total Power Dissipation @TA=25oC2 W PD Total Power Dissipation @TA=75oC1 . 3 W Tj, Tstg Operating and Storage Temperature Range -55 to +150 °C RθJA Thermal Resistance Junction to Ambient*2 62.5 °C/W *1: Maximum DC current limited by the package *2: 1-in2 2oz Cu PCB board H3055LJ Pin Assignment 1 2 3 Tab 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Internal Schematic Diagram G D S

MICROELECTRONICS CORP. Spec. No. : MOS200606 Issued Date : 2006.03.01 Revised Date : 2006.05.04 Page No. : 2/4 H3055LJ HSMC Product Specification Electrical Characteristics (TA=25°C, unless otherwise noted) Symbol Characteristic Test Conditions Min. Typ. Max. Unit

  • Static BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 20 - - V VGS=2.5V, ID=5.2A - 34 45 RDS(on) Drain-Source On-State Resistance VGS=4.5V, ID=6A - 25 35 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 0.6 - 1.5 V IDSS Zero Gate Voltage Drain Current V DS=20V, VGS=0V - - 1 uA IGSS Gate-Body Leakage Current VGS=±12V, VDS=0V -- ±100 nA gFS Forward Transconductance V DS=10V, ID=6A 7 13 - S
  • Dynamic Qg Total Gate Charge - 4.86 - Qgs Gate-Source Charge - 0.92 - Qgd Gate-Drain Charge VDS=10V, ID=6A, VGS=4.5V -1 . 4- nC Ciss Input Capacitance - 562 - Coss Output Capacitance - 106 - Crss Reverse Transfer Capacitance VDS=8V, VGS=0V, f=1MHz -7 5- pF td(on) Turn-on Delay Time - 8.1 - tr Turn-on Rise Time - 9.95 - td(off) Turn-off Delay Time - 21.85 - tf Turn-off Fall Time VDD=10V, ID=1A, VGS=4.5V RGEN=6Ω -5 . 3 5- ns
  • Drain-Source Diode Characteristics IS Maximum Diode Forward Current - - 1.7 A VSD Drain-Source Diode Forward Voltage V GS=0V, IS=1.7A - - 1.2 V Note: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2% G S D RD VDD VOUTVIN RG VGEN Switching Test Circuit td(on) ton tr 90% 10% 50% 10%Input, VIN Output, VOUT td(off) toff tf 90% 10% Inverted 90% 50% Pulse Width Switching Waveforms

MICROELECTRONICS CORP. Spec. No. : MOS200606 Issued Date : 2006.03.01 Revised Date : 2006.05.04 Page No. : 3/4 H3055LJ HSMC Product Specification TO-252 Dimension Important Notice:

  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
  • HSMC reserves the right to make changes to its products without notice.
  • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Tel: 886-3-5983621~5 Fax: 886-3-5982931 M N A L C 321 G H F A B C D E J K a2 a2 L F G H I y2 y2 M O N y1y1 3-Lead TO-252 Plastic Surface Mount Package Marking: Control CodeDate Code HJ Pb Free Mark Pb-Free: " . " (Note) Normal: None 55L Note: Green label is used for pb-free packing Pin Style: 1.Gate 2.Drain 3.Source Material:
  • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM Min. Max. A 6.35 6.80 C 4.80 5.50 F 1.30 1.70 G 5.40 6.25 H 2.20 3.00 L 0.40 0.90 M 2.20 2.40 N 0.90 1.50 a1 0.40 0.65 a2 - *2.30 a5 0.65 1.05 *: Typical, Unit: mm Marking: HJ Pb Free Mark Pb-Free: " . " (Note) Normal: None Control CodeDate Code 3055L Note: Green label is used for pb-free packing Pin Style: 1.Gate 2.Drain 3.Source Material:
  • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 3-Lead TO-252 Plastic Surface Mount Package DIM Min. Max. A 6.40 6.80 B - 6.00 C 5.04 5.64 D- * 4 . 3 4 E 0.40 0.80 F 0.50 0.90 G 5.90 6.30 H 2.50 2.90 I 9.20 9.80 J 0.60 1.00 K - 0.96 L 0.66 0.86 M 2.20 2.40 N 0.70 1.10 O 0.82 1.22 a1 0.40 0.60 a2 2.10 2.50 y1 - 5 o y2 - 3 o *: Typical, Unit: mm

MICROELECTRONICS CORP. Spec. No. : MOS200606 Issued Date : 2006.03.01 Revised Date : 2006.05.04 Page No. : 4/4 H3055LJ HSMC Product Specification Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate (TL to TP)< 3 oC/sec <3 oC/sec Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) 100oC 150oC 60~120 sec 150oC 200oC 60~180 sec Tsmax to TL - Ramp-up Rate <3 oC/sec <3 oC/sec Time maintained above: - Temperature (T - Time (tL) 183oC 60~150 sec 217oC 60~150 sec Peak Temperature (TP) 240 oC +0/-5oC 260 oC +0/-5oC Time within 5oC of actual Peak Temperature (tP) 10~30 sec 20~40 sec Ramp-down Rate <6 oC/sec <6 oC/sec Time 25oC to Peak Temperature <6 minutes <8 minutes 3. Flow (wave) soldering (solder dipping) Products Peak temperature Dipping time Pb devices. 245oC ±5oC 10sec ±1sec Pb-Free devices. 260oC ±5oC 10sec ±1sec Figure 1: Temperature profile tP tL Ramp-down Ramp-up Tsmax Tsmin Critical Zone TL to TP tS Preheat TL TP t 25oC to Peak Time Temperature