H2305N HSMC | Alldatasheet

Document overview

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  • PDF pages: 5

Technical content

Features

  • RDS(on)<58mΩ@VGS=-4.5V, ID=-4.2A
  • RDS(on)<71mΩ@VGS=-2.5V, ID=-2A
  • Simple Drive Requirement
  • Small Package Outline
  • ISurface Mount Device

Description

The Advanced Power MOSFETS from APEC provide the designer with the best combination of fast switching low on-resistance and cost-effectiveness. The SOT-23 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage, applications such as DC/DC converters. Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage ±8 V ID@TA=25℃ Continuous Drain Current) -4.5 A ID@TA=70℃ Continuous Drain Current -3.5 A IDM Drain Current (Pulsed) *1 -10 A PD Total Power Dissipation @TA=25oC 1.38 W Tstg Storage Temperature Range -55 to +150 °C Tj, Operating Junction Temperature Range -55 to +150 °C *1: Repetitive Rating: Pulse width limited by the maximum junction temperation. *2: 1-in2 2oz Cu PCB board

MICROELECTRONICS CORP. Spec. No. : MOS200807 Issued Date : 2008.11.12 Revised Date :2009,12,15 Page No. : 2/5 H2305N HSMC Product Specification Electrical Characteristics (TA=25°C, unless otherwise noted) Symbol Characteristic Test Conditions Min. Typ. Max. Unit

  • Static BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -20 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA -0.1 V/℃ VGS=-4.5V, ID=-2.8A - 58 VGS=-2.5V, ID=-2A 71 RDS(on) Drain-Source On-State Resistance VGS=-1.8V, ID=-1A - 108 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -0. 45 V Zero Gate Voltage Drain Current (Tj=25oC) VDS=-20V, VGS=0V - -1 uA IDSS Zero Gate Voltage Drain Current (Tj=55oC) VDS=-16V, VGS=0V - -10 uA IGSS Gate-Body Leakage Current VGS=±8V, VDS=0V - - ±100 nA gFS Forward Transconductance VDS=-5V, ID=-2.8A - 9.0 - S
  • Drain-Source Diode Characteristics VSD Drain-Source Diode Forward Voltage VGS=0V, IS=-1.2A - - -1.2 V Note: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%

MICROELECTRONICS CORP. Spec. No. : MOS200807 Issued Date : 2008.11.12 Revised Date :2009,12,15 Page No. : 3/5 H2305N HSMC Product Specification Characteristics Curve 02468 VDS,Drain-to-source Voltage(V) ID,Drain current ( Ta= 25℃ -2 V -1.5V -5V -4V -3V Fig 1.Typical Output 02468 VDS,Drain-to-source Voltage(V) ID,Drain current Ta=150℃ -5V -4V -3V -2V Fig 2.Typical Output -1.5V Ch i i 123456 VGS, Gat e- t o - So ur ce Vo lt age( V) RDS(ON)(m -50 -25 0 25 50 75 100 125 150 Tj,Junction Temperature(℃) Normalized RDS( ID=-4.2A VGS=- 4 . 5 V O Ω ID=4.2A Ta= 25℃ Fig 4.Normalized On-Resistance v.s.Junction Fig 3.On-Resistance v.s.G ate 0.1 0.2 0.3 0.4 0.5 0.6 -50 -25 0 25 50 75 100 125 150 175 Tj,Junction Temperature( ℃) VGS(th)( 0.01 0.1 VSD,Source-to-Drain Voltage(V) IS(A Tj=150℃ Tj= 25℃ V Fig 6.G ate Threshold V oltageFig 5.Forw ard Characteristic of Reverse

MICROELECTRONICS CORP. Spec. No. : MOS200807 Issued Date : 2008.11.12 Revised Date :2009,12,15 Page No. : 4/5 H2305N HSMC Product Specification SOT-23 Dimension DIM Min. Max. A 2.80 3.04 B 1.20 1.60 C 0.89 1.30 D 0.30 0.50 G 1.70 2.30 H 0.013 0.10 J 0.085 0.177 K 0.32 0.67 L 0.85 1.15 S 2.10 2.75 V 0.25 0.65 *: Typical, Unit: mm Marking: H JKD A L GV C B S Pb Free Mark Pb-Free: " " (Note) Normal: None Note: Pb-free product can distinguish by the green label or the extra description on the right side of the label. Pin Style: 1.Gate 2.Source 3.Drain Material:

  • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 3-Lead SOT-23 Plastic Surface Mounted Package Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
  • HSMC reserves the right to make changes to its products without notice.
  • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454

MICROELECTRONICS CORP. Spec. No. : MOS200807 Issued Date : 2008.11.12 Revised Date :2009,12,15 Page No. : 5/5 H2305N HSMC Product Specification Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP tL Ramp-down Ramp-up Tsmax Tsmin Critical Zone TL to TP tS Preheat TL TP t 25oC to Peak Time Temperature Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate (TL to TP) <3 oC/sec <3 oC/sec Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) 100oC 150oC 60~120 sec 150oC 200oC 60~180 sec Tsmax to TL - Ramp-up Rate <3oC/sec <3oC/sec Time maintained above: - Temperature (T - Time (tL) 183oC 60~150 sec 217oC 60~150 sec Peak Temperature (TP) 240 oC +0/-5oC 260 oC +0/-5oC Time within 5oC of actual Peak Temperature (tP) 10~30 sec 20~40 sec Ramp-down Rate <6oC/sec <6 oC/sec Time 25oC to Peak Temperature <6 minutes <8 minutes 3. Flow (wave) soldering (solder dipping) Products Peak temperature Dipping time Pb devices. 245oC ±5oC 10sec ±1sec Pb-Free devices. 260oC ±5oC 10sec ±1sec