H2301N HSMC | Alldatasheet

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Technical content

Features

  • RDS(on)<100mΩ@VGS=-4.5V, ID=-2.8A
  • RDS(on)<150mΩ@VGS=-2.5V, ID=-2A
  • Advanced Trench Process Technology
  • High Density Cell Design for Ultra Low On-Resistance
  • Improved Shoot-Through FOM Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage ±8 V ID Drain Current (Continuous) -2.2 A IDM Drain Current (Pulsed) *1 -8 A Total Power Dissipation @TA=25oC 0.9 W PD Total Power Dissipation @TA=75oC 0.57 W Tj, Tstg Operating Junction and Storage Temperature Range -55 to +150 °C RθJA Thermal Resistance Junction to Ambient (PCB mounted)*2 140 °C/W *1: Repetitive Rating: Pulse width limited by the maximum junction temperation. *2: 1-in2 2oz Cu PCB board H2301N Pin Assignment & Symbol 3-Lead Plastic SOT-23 Package Code: N Pin 1: Gate 2: Source 3: Drain 1 2 Gate Drain Source

MICROELECTRONICS CORP. Spec. No. : MOS200612 Issued Date : 2006.07.01 Revised Date : 2006.07.11 Page No. : 2/4 H2301N HSMC Product Specification Electrical Characteristics (TA=25°C, unless otherwise noted) Symbol Characteristic Test C onditions Min. Typ. Max. Unit

  • Static BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -20 - - V VGS=-4.5V, ID=-2.8A - 69 100 RDS(on) Drain-Source On-State Resistance VGS=-2.5V, ID=-2A - 83 150 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -0.45 - -0.95 V IDSS Zero Gate Voltage Drain Current V DS=-9.6V, VGS=0V - - -1 uA IGSS Gate-Body Leakage Current VGS=±8V, VDS=0V - - ±100 nA gFS Forward Transconductance V DS=-5V, ID=-4A - 6.5 - S
  • Dynamic Qg Total Gate Charge - 15.23 - Qgs Gate-Source Charge - 5.49 - Qgd Gate-Drain Charge VDS=-6V, ID=-2.8A, VGS=-4.5V - 2.74 - nC Ciss Input Capacitance - 882.51 - Coss Output Capacitance - 145.54 - Crss Reverse Transfer Capacitance VDS=-6V, VGS=0V, f=1MHz - 97.26 - PF td(on) Turn-on Delay Time - 17.28 - tr Turn-on Rise Time - 3.73 - td(off) Turn-off Delay Time - 36.05 - tf Turn-off Fall Time VDD=-6V, RL=6Ω, ID=-1A, VGEN=-4.5V, RG=6Ω - 6.19 - nS
  • Drain-Source Diode Characteristics IS Maximum Diode Forward Current - - -2.4 A VSD Drain-Source Diode Forward Voltage V GS=0V, IS=-0.75A - -0.8 -1.2 V Note: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%

MICROELECTRONICS CORP. Spec. No. : MOS200612 Issued Date : 2006.07.01 Revised Date : 2006.07.11 Page No. : 3/4 H2301N HSMC Product Specification SOT-23 Dimension Important Notice:

  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
  • HSMC reserves the right to make changes to its products without notice.
  • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Tel: 886-3-5983621~5 Fax: 886-3-5982931 H JKD A L GV C B S DIM Min. Max. A 2.80 3.04 B 1.20 1.60 C 0.89 1.30 D 0.30 0.50 G 1.70 2.30 H 0.013 0.10 J 0.085 0.177 K 0.32 0.67 L 0.85 1.15 S 2.10 2.75 V 0.25 0.65 *: Typical, Unit: mm Marking: Pb Free Mark Pb-Free: " " (Note) Normal: None Note: Pb-free product can distinguish by the green label or the extra description on the right side of the label. Pin Style: 1.Gate 2.Source 3.Drain Material:
  • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 3-Lead SOT-23 Plastic Surface Mounted Package

MICROELECTRONICS CORP. Spec. No. : MOS200612 Issued Date : 2006.07.01 Revised Date : 2006.07.11 Page No. : 4/4 H2301N HSMC Product Specification Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate (TL to TP) <3 oC/sec <3 oC/sec Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) 100oC 150oC 60~120 sec 150oC 200oC 60~180 sec Tsmax to TL - Ramp-up Rate <3oC/sec <3oC/sec Time maintained above: - Temperature (TL) - Time (tL) 183oC 60~150 sec 217oC 60~150 sec Peak Temperature (TP) 240 oC +0/-5oC 260 oC +0/-5oC Time within 5oC of actual Peak Temperature (tP) 10~30 sec 20~40 sec Ramp-down Rate <6 oC/sec <6 oC/sec Time 25oC to Peak Temperature <6 minutes <8 minutes 3. Flow (wave) soldering (solder dipping) Products Peak temperature Dipping time Pb devices. 245oC ±5oC 10sec ±1sec Pb-Free devices. 260oC ±5oC 10sec ±1sec Figure 1: Temperature profile tP tL Ramp-down Ramp-up Tsmax Tsmin Critical Zone TL to TP tS Preheat TL TP t 25oC to Peak Time Temperature