H211 HSMC | Alldatasheet

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Technical content

Features

․ On-chip Hall Sensor/Drivers ․ 4V to 20V Supply Voltage ․ Output Sink Current up to 0.4A ․ Low Quiescent Supply Current under 5mA ․ Built-in FG Output ․ Low Profile TO-94 (SIP-4L) Package Typical Application Circuit C1, C2, R2, R3 is optional for reduce electromagnetism noise. R2, R3 must be greater than 50 ohm. Fig.2 H211 Typical Application Circuit

MICROELECTRONICS CORP. Spec. No. : IC200918 Issued Date : 2009.09.14 Revised Date : 2009.10.29 Page No. : 2/9 H211 HSMC Product Specification Pin Configuration Pin No. Pin Name P/I/O Description 1 FG O Rotation speed output (O.C.) 2 NO O/P Coil driver output/Power input. It is low state during the N magnetic field. 3 SO O/P Coil driver output/Power input. It is low state during the S magnetic field. Mark View

4 GND P IC Ground

Fig.3 Functional Block Diagram of H211

MICROELECTRONICS CORP. Spec. No. : IC200918 Issued Date : 2009.09.14 Revised Date : 2009.10.29 Page No. : 3/9 H211 HSMC Product Specification Absolute Maximum Ratings Characteristics Symbol Value Unit Zener Breakdown Voltage VZ 35 V NO/SO Pin Voltage VO 30 V Hold 500 mA Output Current Continuous IO 350 mA Peak Reverse Current IR 100 mA FG pin OFF voltage VFG 30 V FG sink current IFG 20 mA PD (Ta=25℃) 600 mW Power Dissipation PD (Ta=70℃) 450 mW Operating Temperature Range TOP -20~85 ℃ Storage Temperature Range TS -65~150 ℃ Junction Temperature TJ 150 ℃ Lead Temperature (Soldering，10 sec) 260 ℃

Electrical Characteristics

Parameter Symbol Test Condition Min Typ Max Unit Operating Voltage VCP I CC < 10mA (fig.1) 4 20 V Quiescent Supply Current ICC V CC: 3~20V (fig.1) 2 7 mA NO/SO Saturation Voltage VSAT Io=300mA (fig.1) 1.5 V FG Leakage Current IOFF V FG=30V (fig.1) 1 uA FG Saturation Voltage ION I FG=5mA (fig.2) 0.2 0.5 V Rise Time TR RL=1K CL=10PF 3.0 10 uS Fall Time TF RL=1K CL=10PF 0.3 10 uS Note: No use pin is open when the device is under test. Magnetic Characteristics (TA =-20℃～85℃) Characteristics Symbol Min Max Unit Rank Operate Point BOP 5 50 G H211A Release Point BRP -50 -5 G A Operate Point BOP - 70 G H211B Release Point BRP -70 - G B Operate Point BOP - 90 G H211C Release Point BRP -90 - G C Operate Point BOP - 130 G H211D Release Point BRP -130 - G D

MICROELECTRONICS CORP. Spec. No. : IC200918 Issued Date : 2009.09.14 Revised Date : 2009.10.29 Page No. : 4/9 H211 HSMC Product Specification Fig.4 VNO vs. Magnetic Flux Density Fig.5 VSO vs. Magnetic Flux Density Typical Performance Characteristics Fig.6 ICC vs. VCC Fig.7 BOP / BRP / BHYS vs. VCC Fig.8 BOP / BRP / BHYS vs. Ambient Temperature Fig.9 PD vs. Ambient Temperature

MICROELECTRONICS CORP. Spec. No. : IC200918 Issued Date : 2009.09.14 Revised Date : 2009.10.29 Page No. : 5/9 H211 HSMC Product Specification Typical Performance Characteristics (Continued) Fig.10 VSAT vs. Ambient Temperature est Circuits Fig.11 Test Circuit 1 (Under N Magnetic field) Fig.12 Test Circuit 2 T

MICROELECTRONICS CORP. Spec. No. : IC200918 Issued Date : 2009.09.14 Revised Date : 2009.10.29 Page No. : 6/9 H211 HSMC Product Specification

Application Information

1). Hall Sensor Location cation, where marks the IC number. The best sensitivity, which can be intensified as The Fig.13 is the hall sensor lo much as possible, depends on the vertical distance and position between magnetic pole and the hall sensor (Fig.14). For the 2-phase motor, this design is very important. Fig.13 H211 Hall Sensor Location 2). Darlington-pair Transistor Output The Fig.15 is the circuit diagram of Darlington-pair transistor. Under the heavy current loading, the power loss of the Q1 E(SAT)Q2 ﹒﹒﹒(1) Accord e curve of the power loss, the PC should be ap d to and within the safety value. high saturation voltage can be calculated into the following formula: ing to the IC package and th plie 30V is the voltage of Zener breakdown diode. However, if the voltage, excluding that of the power supply, is more than 30V under the long-time operation, the diode will be destroyed, and meanwhile, the device will de destroyed.

MICROELECTRONICS CORP. Spec. No. : IC200918 Issued Date : 2009.09.14 Revised Date : 2009.10.29 Page No. : 7/9 H211 HSMC Product Specification Fig.15 H211 Darlington-pair Transistor Output 3). FG Output: The Circuit Diagram of Open Collector Transistor Fig.16 the small signal transistor output connected with the pull-up resistance is to limit the current and confirm the voltage level of rotation speed. The situation of the long-time operation with the high voltage or with the high current will do damage to the transistor and cause FG malfunction. Fig.17 illustrates the relation between dynamic magnetic field and FG. Fig.16 H211 FG Circuit Diagram Fig.17 H211 FG Waveform 4). Application Note Fig.18 is the example of typical application circuit. The red, yellow, and black wires are the input points of the motor system: red, the input of power supply; yellow, the output of FG; black, the ground signal. RC is an external pull-up resistance for the use of measuring FG signal. In view of the design, the value of RC could be decided by the transistor saturation voltage (Von), sink current (Ic), and off-level voltage (Vc). The formula is: For example： Vc=+5V for TTL level, Ic=5mA at 0.5V saturation voltage (IC specification).

MICROELECTRONICS CORP. Spec. No. : IC200918 Issued Date : 2009.09.14 Revised Date : 2009.10.29 Page No. : 8/9 H211 HSMC Product Specification The safety value of Rc=1kΩ. D1 is the reverse protection diode. As if the red and black wires reversely are connected with the power source, the current will flow through the ground via IC and coils L1 and L2 to power supply. Under such kind of circumstance, the IC and coils are easy to be burned out. Therefore, D1, the reverse protection diode, is necessary for the design. However, D1 will also cause an extra voltage drop on the supply voltage. C1 is a capacitor to reduce the ripple noise caused during the transient of the output stages. The volume of the ripple noise depends on the coil impedance and characteristics. Fig.18 H211 Typical Application Circuit

MICROELECTRONICS CORP. Spec. No. : IC200918 Issued Date : 2009.09.14 Revised Date : 2009.10.29 Page No. : 9/9 H211 HSMC Product Specification Package Dimensions A B C D EF G H Marking Site J I K E 12 34 L DIM Min. Max.Marking: Note: Green label is used for pb-free packing Pin Style: 1.VCC 2.V out1 3.V out2 4.GND Hall Sensor Location: 2.00mm 1.25mm To p View Material:

  • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 A 5.12 5.32 B 4.10 4.30 C 3.55 3.75 D 0.43 0.49 E 0.35 0.41 F 1.24 1.30 G 3.78 3.84 H 1.32 1.52 I 1.45 1.65 J 0.93 1.13 K 13.00 15.50 L a1 3 o 5 o a2 5 o 7 o *: Typical, Unit: mm 4-Lead SIP-4L Plastic Package Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of AVANTIC.
  • HSMC reserves the right to make changes to its products without notice.
  • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office:
  • Head Office (Hi-Sincerity Microelectronics Corp.): 5/F., Golden Harvest Building 15 Wang Chiu Road, Kowloon Bay, Hong Kong Tel: +852-2755-7162 Fax: +852-2755- 7795 AVANTICS : Shanghai Address: No.399, Cai Lum Rd. Zhangjiang Technology Industrial Park Pudong, Shanghai 201210, China Tel: +86(21) 61637118 Fax: +86(21)61637006