IHW15N120R2 INFINEON | Alldatasheet

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Technical content

Power Semiconductors 1 Rev. 1.2 May 06 Reverse Conducting IGBT with monolithic body diode Features:

  • Powerful monolithic Body Diode with very low forward voltage
  • Body diode clamps negative voltages
  • Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior
  • Low EMI
  • Qualified according to JEDEC 1 for target applications
  • Pb-free lead plating; RoHS compliant
  • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Applications:
  • Inductive Cooking
  • Soft Switching Applications Type VCE I C VCE(sat),Tj=25°C Tj,max Marking Package IHW15N120R2 1200V 15A 1.5V 175°C H15R1202 PG-TO-247-3-21 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DC collector current TC = 25°C TC = 100°C IC Pulsed collector current, tp limited by Tjmax ICpuls 45 Turn off safe operating area (VCE ≤ 1200V, Tj ≤ 175°C) - 45 Diode forward current TC = 25°C TC = 100°C IF Diode pulsed current, tp limited by Tjmax IFpuls 45 Diode surge non repetitive current, tp limited by Tjmax TC = 25°C, tp = 10ms, sine halfwave TC = 25°C, tp ≤ 2.5µs, sine halfwave TC = 100°C, tp ≤ 2.5µs, sine halfwave IFSM 130 120 A Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms) VGE ±20 ±25 V Power dissipation TC = 25°C Ptot 357 W Operating junction temperature Tj -40...+175 Storage temperature Tstg -55...+175 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260 Mounting Torque Ms 0.6 Nm

1 J-STD-020 and JESD-022

G C E PG-TO-247-3-21

Power Semiconductors 2 Rev. 1.2 May 06 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction – case RthJC 0.52 Diode thermal resistance, junction – case RthJCD 0.47 Thermal resistance, junction – ambient RthJA 40 K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Value Parameter Symbol Conditions min. typ. max. Unit Static Characteristic Collector-emitter breakdown voltage V(BR)CES VGE =0V, IC =500 µ A 1200 - - Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC =15A Tj =25 °C Tj =125 °C Tj =175 °C 1.5 1.7 1.8 1.75 Diode forward voltage V F VGE =0V, IF =15A Tj =25 °C Tj =125 °C Tj =175 °C 1.45 1.55 1.6 1.65 Gate-emitter threshold voltage VGE(th) IC =0.4mA, VCE =VGE 5.1 5.8 6.4 V Zero gate voltage collector current ICES VCE =1200V , VGE =0V Tj =25 °C Tj =175 °C 2500 µA Gate-emitter leakage current IGES VCE =0V, VGE =20V - - 100 nA Transconductance gfs VCE =20V, IC =15A - 11.7 - S Integrated gate resistor RGint none Ω

Power Semiconductors 3 Rev. 1.2 May 06 Dynamic Characteristic Input capacitance Ciss - 1530 - Output capacitance Coss - 49 - Reverse transfer capacitance Crss VCE =25V, VGE =0V, f=1MHz - 39 - pF Gate charge QGate VCC =960V, IC =15A VGE =15V - 133 - nC Internal emitter inductance measured 5mm (0.197 in.) from case LE - 13 - nH Switching Characteristic, Inductive Load, at Tj=25 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-off delay time td(off) - 282 - Fall time tf - 62 - Turn-off energy Eoff - 0.9 - Total switching energy Ets Tj =25 °C, VCC =600V, IC =15A VGE =0 /15V, RG =14.8 Ω , Lσ 2) =230nH, Cσ 2) =39pF - 0.9 - Switching Characteristic, Inductive Load, at Tj=175 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-off delay time td(off) - 342 - Fall time tf - 90 - Turn-off energy Eoff - 1.3 - Total switching energy Ets Tj =175 °C VCC =600V, IC =15A, VGE = 0 /15V, RG = 14.8 Ω , Lσ =230nH 2) , Cσ =39pF 2) - 1.3 - 2) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.

Power Semiconductors 10 Rev. 1.2 May 06 PG-TO247-3-21

Power Semiconductors 11 Rev. 1.2 May 06 Figure A. Definition of switching times Figure B. Definition of switching losses I rrm 90% I rrm 10% Irrm di /dt F t rr I F i,v tQ S Q F t S t F V R di /dt rr Q= Q Q rr S F t= t t rr S F Figure C. Definition of diodes switching characteristics p(t) 12 n T( t )j n n τ TC rr r r rr Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Lσ =180nH and Stray capacity Cσ =39pF.

Power Semiconductors 12 Rev. 1.2 May 06