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ResonantSoft-SwitchingSeries ReverseconductingIGBTwithmonolithicbodyDiodeforsoft-switching IHW15N120E1 Datasheet IndustrialPowerControl

ResonantSoft-SwitchingSeries Rev.2.1,2016-07-29 ReverseconductingIGBTwithmonolithicbodydiode Features:

  • Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly
  • TRENCHSTOPTMtechnologyapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowVCEsat -easyparallelswitchingcapabilityduetopositive temperaturecoefficientinVCEsat
  • LowEMI
  • QualifiedaccordingtoJEDECfortargetapplications
  • Pb-freeleadplating;RoHScompliant
  • CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ Applications:
  • Inductivecooking
  • Inverterizedmicrowaveovens
  • Resonantconverters
  • Softswitchingapplications G C E G C E KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package IHW15N120E1 1200V 15A 1.5V 150°C H15ME1 PG-TO247-3

ResonantSoft-SwitchingSeries Rev.2.1,2016-07-29 TableofContents

ResonantSoft-SwitchingSeries Rev.2.1,2016-07-29 MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 1200 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C IC 30.0 15.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 45.0 A TurnoffsafeoperatingareaVCE≤1200V,Tvj≤150°C1) - 45.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C IF 30.0 15.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 45.0 A Gate-emitter voltage TransientGate-emittervoltage(tp≤10µs,D<0.010) VGE ±20 ±25 V PowerdissipationTC=25°C PowerdissipationTC=100°C Ptot 156.0 62.2 W Operating junction temperature Tvj -40...+150 °C Storage temperature Tstg -55...+150 °C Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s 260 °C Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Value min. typ. max. Parameter Symbol Conditions Unit RthCharacteristics IGBT thermal resistance, junction - case Rth(j-c) - - 0.80 K/W Diode thermal resistance, junction - case Rth(j-c) - - 0.80 K/W Thermal resistance junction - ambient Rth(j-a) - - 40 K/W 1) dV/dt < 1kV/µs

ResonantSoft-SwitchingSeries Rev.2.1,2016-07-29 ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value min. typ. max. Parameter Symbol Conditions Unit StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA 1200 - - V Collector-emitter saturation voltage VCEsat VGE=15.0V,IC=15.0A Tvj=25°C Tvj=100°C Tvj=150°C 1.50 1.65 1.75 2.00 V Diode forward voltage VF VGE=0V,IF=15.0A Tvj=25°C Tvj=100°C Tvj=150°C 1.90 2.15 2.35 2.50 V Gate-emitter threshold voltage VGE(th) IC=0.50mA,VCE=VGE 4.0 5.8 8.0 V Zero gate voltage collector current ICES VCE=1200V,VGE=0V Tvj=25°C Tvj=150°C 300 100 µA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=15.0A - 14.0 - S Integrated gate resistor rG 6.8 Ω ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value min. typ. max. Parameter Symbol Conditions Unit DynamicCharacteristic Input capacitance Cies - 810 - Output capacitance Coes - 24 - Reverse transfer capacitance Cres - 20 - VCE=25V,VGE=0V,f=1MHz pF Gate charge QG VCC=960V,IC=15.0A, VGE=15V - 90.0 - nC Internal emitter inductance measured 5mm (0.197 in.) from case LE - 13.0 - nH SwitchingCharacteristic,InductiveLoad Value min. typ. max. Parameter Symbol Conditions Unit IGBTCharacteristic,atTvj=25°C Turn-off delay time td(off) - 130 - ns Fall time tf - 1000 - ns Tvj=25°C, VCC=65V,IC=15.0A, VGE=0.0/18.0V, RG(off)=10.2Ω Energy losses include “tail” according Figure B. (Test circuit FigureE,Cr=300nF). Turn-off energy, soft switching Eoff dv/dt=50.0V/µs - 0.03 - mJ

ResonantSoft-SwitchingSeries Rev.2.1,2016-07-29 Turn-off delay time td(off) - 150 - ns Fall time tf - 790 - ns Tvj=25°C, VCC=195V,IC=45.0A, VGE=0.0/18.0V, RG(off)=10.2Ω Energy losses include “tail” according Figure B. (Test circuit FigureE,Cr=300nF). Turn-off energy, soft switching Eoff dv/dt=150.0V/µs - 0.17 - mJ SwitchingCharacteristic,InductiveLoad Value min. typ. max. Parameter Symbol Conditions Unit IGBTCharacteristic,atTvj=150°C Turn-off delay time td(off) - 140 - ns Fall time tf - 1800 - ns Tvj=150°C, VCC=65V,IC=15.0A, VGE=0.0/18.0V, RG(off)=10.2Ω Energy losses include “tail” according Figure B. (Test circuit FigureE,Cr=300nF). Turn-off energy, soft switching Eoff dv/dt=50.0V/µs - 0.07 - mJ Turn-off delay time td(off) - 150 - ns Fall time tf - 1300 - ns Tvj=150°C, VCC=195V,IC=45.0A, VGE=0.0/18.0V, RG(off)=10.2Ω Energy losses include “tail” according Figure B. (Test circuit FigureE,Cr=300nF). Turn-off energy, soft switching Eoff dv/dt=150.0V/µs - 0.36 - mJ

ResonantSoft-SwitchingSeries Rev.2.1,2016-07-29

ResonantSoft-SwitchingSeries Rev.2.1,2016-07-29 t VGE(t) E t t V I toff = x x d CE C CC Figure A. Figure B. Figure C.Typical switching behavior in resonant applications Figure E. Dynamic test circuit Figure D. I (t)C Resonant capacitor, Damping resistor, R V (t) CE V GE (t) I (t) V (t)CE T esting Conditions td(off) tf 2% I C t 90% VGE t t 0% IC 1% I C t 90% VGE t t t I,V VGE I CE V CE C r R

ResonantSoft-SwitchingSeries Rev.2.1,2016-07-29 RevisionHistory IHW15N120E1 Revision:2016-07-29,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2016-07-21 Preliminary data sheet 2.1 2016-07-29 Final data sheet Publishedby InfineonTechnologiesAG 81726München,Germany ©InfineonTechnologiesAG2016. AllRightsReserved. ImportantNotice Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany informationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesand liabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythird party. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseof theproductofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityof customer’stechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthe completenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication. Forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearest InfineonTechnologiesoffice(www.infineon.com). PleasenotethatthisproductisnotqualifiedaccordingtotheAECQ100orAECQ101documentsoftheAutomotive ElectronicsCouncil. Warnings Duetotechnicalrequirementsproductsmaycontaindangeroussubstances.Forinformationonthetypesinquestion pleasecontactyournearestInfineonTechnologiesoffice. ExceptasotherwiseexplicitlyapprovedbyInfineonTechnologiesinawrittendocumentsignedbyauthorized representativesofInfineonTechnologies,InfineonTechnologies’productsmaynotbeusedinanyapplicationswherea failureoftheproductoranyconsequencesoftheusethereofcanreasonablybeexpectedtoresultinpersonalinjury.