H12N60

H12N60 HSMC | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 4

Technical content

Features

G D S

• H10N60F is a High voltage NChannel enhancement mode power MOSFET chip fabricated in advanced silicon epitaxial planar technology
• Advanced termination scheme to provide enhanced voltageblocking capability
• Avalanche Energy Specified
• Source to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode;
• The packaged product is widely used in AC-DC power suppliers, DCDC converters and Hbridge PWM motor drivers Absolute Maximum Ratings Symbol Parameter Value Units VDSS Drain-Source Voltage 600 V Continuous Drain Current (VGS@10V, TC=25oC) 12 A ID Continuous Drain Current (VGS@10V, TC=100oC) 7.6 A IDM Pulsed Drain Current *1 40 A VGS Gate-to-Source Voltage ±30 V TO-220AB 175 Total Power Dissipation (TC=25oC) TO-220FP 50 W TO-220AB 1.43 PD Linear Derating Factor TO-220FP 0.41 W/°C EAS Single Pulse Avalanche Energy*2 68 mJ IAR Avalanche Current *1 12 A EAR Repetitive Avalanche Energy *1 66 mJ TJ Operating Junction Temperature Range -55 to 150 °C Tstg Storage Temperature Range -55 to 150 °C *1: Repetitive rating; pulse width limited by max. junction temperature *2: Starting TJ=25°C, L=1.2mH, RG=25Ω, IAS=10A *3: ISD≤14A, di/dt≤130A/us, VDD≤V(BR)DSS, TJ≤150°C Thermal Characteristics Symbol Parameter Value Units TO-220AB 1.3 RθJC Thermal Resistance Junction to Case (Max.) TO-220FP 5 °C/W RθJA Thermal Resistance Junction to Ambient (Max.) 62 °C/W

MICROELECTRONICS CORP. Spec. No. : MOS200902 Issued Date : 2009.01.20 Revised Date : Page No. : 2/4 H10N60F HSMC Product Specification ELectrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Characteristic Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 600 - - V ΔV(BR)DSS/ΔT J Breakdown Voltage Temp. Coefficient Reference to 25oC, ID=1mA - 0.58 - V/oC Drain-Source Leakage Current VDS=600V, VGS=0V - - 10 uA IDSS Drain-Source Leakage Current VDS=400V, VGS=0V, Tj=125°C 60 uA IGSSF Gate-Source Forward Leakage Vgsf=30V, VDS=0V - - 100 nA IGSSR Gate-Source Reverse Leakage Vgsr=-30V, VDS=0V - - -100 nA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V RDS(on) Static Drain-Source On-Resistance VGS=10V, ID=6.0A*4 - - 0.8 Ω gFS Forward Transconductance VDS=40V, ID=6.0A 5 - S Ciss Input Capacitance - 1830 - Coss Output Capacitance - 157 - Crss Reverse Transfer Capacitance VDS=25V, VGS=0V, f=1MHz - 2.2 - pF td(on) Turn-on Delay Time - 50 - tr Rise Time - 50 - td(off) Turn-off Delay Time - 311 - tf Fall Time (VDD=325V, ID=12A, RG=4.7Ω, RD=32Ω)*4 - 55 - ns Qg Total Gate Charge - 52 Qgs Gate-Source Charge - 10 Qgd Gate-Drain Charge (VDS=520V, ID=12A, VGS=10V) - 19 nC Source-Drain Diode Symbol Characteristic Min. Typ. Max. Units IS Continuous Source Current (Body Diode) Page1 MOSFET symbol showing the integral reverse P-N junction diode. - - 12 A VSD Diode Forward Voltage IS=12A, VGS=0V, TJ=25°C*4 - - 1.4 V *4: Pulse Test: Pulse Width≤300us, Duty Cycle≤2% *5: COSS eff. Is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to 80% VDSS

MICROELECTRONICS CORP. Spec. No. : MOS200902 Issued Date : 2009.01.20 Revised Date : Page No. : 3/4 H10N60F HSMC Product Specification TO-220AB Dimension TO-220FP Dimension Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 DIM Min. Max. A 6.48 7.40 C 4.40 4.90 D 2.34 3.00 E 0.45 0.80 F 9.80 10.36 G 3.10 3.60 I 2.70 3.43 J 0.60 1.00 K 2.34 2.74 L 12.48 13.60 M 15.67 16.20 N 0.90 1.47 O 2.00 2.96 α1/2/4/5 - *5 o Unit: mm Marking: Note: Green label is used for pb-free packing Pin Style: 1.Gate 2.Drain 3.Source Material:
• Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 3-Lead TO-220FP Plastic Package A D F G I K LM C JN E O A B E G I KM OP C N H D Tab F J DIM Min. Max.Marking: A 5.58 7.49 B 8.38 8.90 C 4.40 4.70 D 1.15 1.39 E 0.35 0.60 F 2.03 2.92 G 9.66 10.28 Note: Green label is used for pb-free packing Pin Style: 1.Gate 2 & Tab.Drain 3.Source H - *16.25 I - *3.83 J 3.00 4.00 K 0.75 0.95 L 2.54 3.42Material:
• Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 3-Lead TO-220AB M 1.14 1.40 N - *2.54 O 12.70 14.27 P 14.48 15.87L *: Typical, Unit: mm Plastic Package

MICROELECTRONICS CORP. Spec. No. : MOS200902 Issued Date : 2009.01.20 Revised Date : Page No. : 4/4 H10N60F HSMC Product Specification Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate (TL to TP) <3 oC/sec <3 oC/sec Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) 100oC 150oC 60~120 sec 150oC 200oC 60~180 sec Tsmax to TL - Ramp-up Rate <3oC/sec <3oC/sec Time maintained above: - Temperature (T - Time (tL) 183oC 60~150 sec 217oC 60~150 sec Peak Temperature (TP) 240 oC +0/-5oC 260 oC +0/-5oC Time within 5oC of actual Peak Temperature (tP) 10~30 sec 20~40 sec Ramp-down Rate <6oC/sec <6 oC/sec Time 25oC to Peak Temperature <6 minutes <8 minutes 3. Flow (wave) soldering (solder dipping) Products Peak temperature Dipping time Pb devices. 245oC ±5oC 5sec ±1sec Pb-Free devices. 260oC +0/-5oC 5sec ±1sec tL Ramp-down Ramp-up Tsmax Tsmin Critical Zone TL to TP tS Preheat TL TP Temperature t 25oC to Peak Time