H11G1X ISOCOM | Alldatasheet

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Technical content

l UL recognised, File No. E91231 'X' SPECIFIC ATION APPRO V ALS l lVDE 0884 in 2 available lead forms : - - STD - G form

DESCRIPTION

The H11G_ series are optically coupled isolators consisting of an infrared light emitting diode and a high voltage NPN silicon photo darlington which has an integral base-emitter resistor to optimise switching speed and elevated temperature characteristics in a standard 6pin dual in line plastic package. FE ATURES l Options :- 10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation V oltage (5.3kV RMS ,7.5kV PK ) l High Current Transfer Ratio ( 1000% min) l High BV CEO (H11G1 - 100V min.) l Low collector dark current :- 100nA max. at 80V V CE l Low input current 1mA I F APPLIC ATIONS l Modems l Copiers, facsimiles l Numerical control machines l Signal transmission between systems of different potentials and impedances H11G1X, H 11G2X, H 11G3X H11G1, H 11G2, H 11G3 HIGH VO LT AGE DARLINGTON OUTPUT OPTICAL LY COUPLED ISOL ATOR ABSOLUTE MAXIMUM R ATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current 60mA Peak Forward Current 3A (1 µs pulse, 300pps) Reverse V oltage 3 V Power Dissipation 100mW OUTPUT TRANSISTOR Collector-emitter V oltage BV CEO H11G3, H11G2, H11G1 55, 80, 100V Collector-base V oltage BV CBO H11G3, H11G2, H11G1 55, 80, 100V Emitter-base V oltage BV ECO 6V Power Dissipation 200mW POWER DISSI PA TION Total Power Dissipation 260mW 0.26 0.5 Dimensions in mm 7.0 6.0 1.2 7.62 3.0 13° Max 3.35 4.0 3.0 2.54 7.62 6.62 0.5 3 4 2 5 OPTION G 7.62SURFACE MOUNT OPTION SM 10.16 0.26 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park V iew Industrial Estate, Brenda Road Hartlepool, TS25 1YD England Tel: (01429)863609 Fax : (01429) 863581 e-mail sales@isocom.co.uk http://ww w .isocom.com 10.46 9.86 0.6 0.1 1.25 0.75

PARAMETER MIN TYP MAX UNITS TEST CONDITION Input Forward Voltage (V F ) 1.2 1.5 V I F = 10mA Reverse Voltage (V R ) 3 V I R = 10 µA Reverse Current (I R ) 10 µA V R = 6V Output Collector-emitter Breakdown (BV CEO ) H11G1 100 V I C = 1mA H11G2 80 V I C = 1mA H11G3 55 V I C = 1mA Collector-base Breakdown (BV CBO ) H11G1 100 V I C = 100 µA H11G2 80 V I C = 100 µA H11G3 55 V I C = 100 µA Emitter-base Breakdown (BV EBO ) 6 V I E = 0.1mA Collector-emitter Dark Current (I CEO ) H11G1 100 nA V CE = 80V H11G2 100 nA V CE = 60V H11G3 100 nA V CE = 30V Coupled Collector Output Current ( I C ) H11G1, H11G2 100 mA 10mA I F , 1.2V V CE H11G1, H11G2 5 mA 1mA I F , 5V V CE H11G3 2 mA 1mA I F , 5V V CE Collector-emitter Saturation Voltage V CE(SAT) H11G1, H11G2 1.0 V 1mA I F , 1mA I C H11G1, H11G2 1.2 V 16mA I F , 50mA I C H11G3 1.2 V 20mA I F , 50mA I C Input to Output Isolation Voltage V ISO 5300 V RMS See note 1

7500 V PK See note 1

Input-output Isolation Resistance R ISO 10 11 Ω V IO = 500V (note 1) Input-output Capacitance Cf 0.5 pF V = 0, f =1MHz Turn-on Time ton 5 µs I F = 10mA, V CC = 5V, Turn-off Time toff 100 µs R L = 100 Ω, f = 30Hz, pulse width equal to or less than 300 µs 7/12/00 ELECTRICAL CHARACTERISTICS ( T A = 25°C Unless otherwise noted ) Input Output 10% 90% 10% 90% t off tr t on t f Output V CC I F = 10mA Input FIGURE 1 100 Ω Note 1 Measured with input leads shorted together and output leads shorted together. Note 2 Special Selections are available on request. Please consult the factory. DB92008m-AAS/a1

0.01 0.1 Collector-emitter voltage V CE ( V ) -30 0 25 50 75 100 Ambient temperature T A ( °C ) Normalized Output Current vs. Collector-emitter Voltage Collector dark current I CEO (nA) Collector Dark Current vs. Ambient Temperature -30 0 25 50 75 100 125 Ambient temperature T A ( °C ) 100 Collector power dissipation P C (mW) Collector Power Dissipation vs. Ambient Temperature 0.1 1.0 10 100 Input current I F (mA) Normalized Output Current vs. Input Current 0.01 0.1 1.0 1.0 100 Normalized output current I F = 1mA 10mA 50mA 100 10k 100k 150 200 250 1.0 Normalized output current Normalized Output Current vs. Ambient Temperature -50 -25 0 25 50 75 100 Ambient temperature T A ( °C )Ambient temperature T A ( °C ) -30 0 25 50 75 100 125 Forward Current vs. Ambient Temperature Forward current I F (mA) Normalized to I F = 1mA (300 µs pulse), V CE = 5V 10mA I F = 1mA 50mA Normalized to I F = 1mA (300 µs pulse), V CE = 5V T A = 25 °C 0.01 Normalized output current 50V V CE V CE = 80V V CE = 10V 0.1 100 100 Normalized to I F = 1mA (300 µs pulse), V CE = 5V T A = 25 °C DB92008m-AAS/a1