H11D1X ISOCOM | Alldatasheet

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Technical content

'X' SPECIFICATION APPROV ALS zzzzz VDE 0884 in 3 available lead forms : - - STD - G form - SMD approved to CECC 00802

DESCRIPTION

The H11D series of optically coupled isolators consist of infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package.

FEATURES

z Options :- 10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. z High Isolation V oltage (5.3kVRMS ,7.5kVPK ) z High BVCER ( 300V - H11D1, H11D2 ) ( 200V - H11D3, H11D4 ) z All electrical parameters 100% tested z Custom electrical selections available

APPLICATIONS

z Industrial systems controllers z Measuring instruments z Signal transmission between systems of different potentials and impedances H11D1X, H11D2X, H11D3X, H11D4X H11D1, H11D2, H11D3, H11D4 HIGH VOLTAGE OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current 60mA Reverse V oltage 6 V Power Dissipation 100mW OUTPUT TRANSISTOR Collector-emitter V oltage BV CER (RBE= 1MΩ ) H11D1, H11D2 300V H11D3, H11D4 200V Collector-base V oltage BVCBO H11D1, H11D2 300V H11D3, H11D4 200V Emitter-collector V oltage BVECO 6V Collector Current 100mA Power Dissipation 150mW POWER DISSIPATION Total Power Dissipation 250mW (derate linearly 2.67mW/°C above 25°C) 0.26 0.5 7.0 6.0 1.2 7.62 3.0 13° Max 3.35 4.0 3.0 2.54 7.62 6.62 0.5 OPTION G 7.62SURFACE MOUNT OPTION SM 10.16 0.26 ISOCOM COMPONENTS 2004 LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, TS25 1UD England Tel: (01429)863609 Fax : (01429) 863581 e-mail sales@isocom.co.uk http://www.isocom.com 10.46 9.86 0.6 0.1 1.25 0.75 Dimensions in mm

PARAMETER MIN TYP MAX UNITS TEST CONDITION Input Forward V oltage (VF) 1.2 1.5 V I F = 10mA Reverse Current (IR)1 0 μAV R = 6V Output Collector-emitter Breakdown (BV CER ) H11D1, H11D2 300 V I C = 1mA, RBE = 1MΩ H11D3, H11D4 200 V ( note 2 ) Collector-base Breakdown (BVCBO) H11D1, H11D2 300 V I C = 100μA H11D3, H11D4 200 V Emitter-collector Breakdown (BV ECO ) 6 V I E = 100μA Collector-emitter Dark Current (I CER ) H11D1, H11D2 100 nA V CE = 200V ,RBE=1MΩ 250 μAV CE= 200V ,RBE=1MΩ, TA=100°C H11D3, H11D4 100 nA V CE = 100V ,RBE=1MΩ 250 μAV CE= 100V ,RBE=1MΩ, TA=100°C Coupled Current Transfer Ratio (CTR) 20 % 10mA I F , 10V VCE , RBE = 1MΩ Collector-emitter Saturation V oltageVCE(SAT) 0.4 V 10mA I F , 0.5mA IC , RBE = 1MΩ Input to Output Isolation V oltage VISO 5300 V RMS See note 1

7500 V PK See note 1

Input-output Isolation Resistance R ISO 5x1010 Ω VIO = 500V (note 1) Turn-on Time ton 5 μsV CC = 10V , IC= 2mA, Turn-off Time toff 5 μs R L = 100Ω , fig 1 Note 1 Measured with input leads shorted together and output leads shorted together. Note 2 Special Selections are available on request. Please consult the factory. 14/8/08 ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted ) Output Output RL = 100Ω Input 10% 90% 90% 10% ton tr FIG 1 VCC toff tf DB91077m-AAS/A3

Ambient temperature T A ( °C ) 300 400 Ambient temperature T A ( °C ) Collector power dissipation P C (mW) -30 0 25 50 75 100 125 Collector Power Dissipation vs. Ambient Temperature Forward Current vs. Ambient Temperature 200 Forward current I F (mA) -30 0 25 50 75 100 125 0.4 0.6 0.8 1.0 1.2 0.2 1.4 Relative current transfer ratio Relative Current Transfer Ratio vs. Ambient Temperature 1 2 5 10 20 50 1.0 Relative current transfer ratio Forward current I F (mA) 0.1 0.01 0.8 1.0 -30 0 25 50 75 100 Ambient temperature T A ( °C ) 100 200 300 400 500 600 700 0.1 0.2 0.5 1 2 5 10 20 50 0.9 1.1 1.3 1.2 1.4 Forward current I F (mA) Forward voltage VF (V) VCE = 10V RBE = 1MΩ TA = 25°C Relative Current Transfer Ratio vs. Forward Current ( normalised to 10mA I F ) 1.6 1.8 2.0 2.2 2.4 -30 0 25 50 75 100 Ambient temperature T A ( °C ) 800 Normalised to V CE = 10V , IF = 10mA , R BE = 1MΩ , TA = 25°C IF = 20mA IF = 10mA IF = 5mA Collector-base current I CBO (μA) Collector-base Current vs. Ambient TemperatureForward Voltage vs. Forward Current VCB= 10V IF = 50mA VCB= 200V IF = 10mA VCB= 10V IF = 5mA VCB= 10V IF = 10mA TA = -55°C TA = +25°C TA= +100°C DB91077m-AAS/A3