H11D1

H11D1 LITEON | Alldatasheet

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Technical content

LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only

FEATURES

• Current transfer ratio ( CTR : MIN. 20% at IF = 10mA, VCE = 10V ) * High isolation voleage between input and output ( Viso = 5,000 Vrms ) * Very High collector-emitter breakdown voltage ( BVCER = 300V) * Dual-in-line package : H11D1 : 1-channel type * Wide lead spacing package : H11D1M : 1-channel type * Surface mounting package : H11D1S : 1-channel type * Tape and reel packaging : H11D1S-TA1 * UL approved ( No. E113898 ) * VDE approved ( No. 094722 ) Part No. : H11D1 ( M, S, S-TA1 ) Page : 1 of 9 BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only OUTLINE DIMENSIONS H11D1 : H11D1M : *1. Year date code. *2. 2-digit work week. *3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China). Part No. : H11D1 ( M, S, S-TA1 ) Page : 2o f9 BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only OUTLINE DIMENSIONS H11D1S : *1. Year date code. *2. 2-digit work week. *3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China). Part No. : H11D1 ( M, S, S-TA1 ) Page : 3o f9 BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only TAPING DIMENSIONS H11D1S-TA1 : Description Symbol Dimensions in mm ( inches ) Tape wide W 16 ± 0.3 ( .63 ) Pitch of sprocket holes P 0 4 ± 0.1 ( .15 ) Distance of compartment F 7.5 ± 0.1 ( .295 ) 2 ± 0.1 ( .079 ) Distance of compartment to compartment P 1 12 ± 0.1 ( .472 ) Part No. : H11D1 ( M, S, S-TA1 ) Page : 4o f9 BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only ABSOLUTE MAXIMUM RATING ( Ta = 25°C ) PARAMETER SYMBOL RATING UNIT Forward Current I F 60 mA Reverse Voltage V R 6 V INPUT Power Dissipation P 100 mW Collector - Emitter Voltage V CEO 300 V Emitter - Base Voltage V EBO 7 V Collector - Base Voltage V CBO 300 V Emitter - Collector Voltage V ECO 7 V Collector Current I C 100 mA OUTPUT Collector Power Dissipation P C 150 mW Total Power Dissipation P tot 250 mW *1 Isolation Voltage V iso 5,000 Vrms Operating Temperature T opr -55 ~ +100 °C Storage Temperature T stg -55 ~ +150 °C *2 Soldering Temperature T sol 260 °C *1. AC For 1 Minute, R.H. = 40 ~ 60% Isolation voltage shall be measured using the following method. (1) Short between anode and cathode on the primary side and between collector and emitter on the secondary side. (2) The isolation voltage tester with zero-cross circuit shall be used. (3) The waveform of applied voltage shall be a sine wave. *2. For 10 Seconds Part No. : H11D1 ( M, S, S-TA1 ) Page : 5o f9 BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only ELECTRICAL - OPTICAL CHARACTERISTICS ( Ta = 25°C ) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS Forward Voltage V F — 1.2 1.5 V I F = 10mA Reverse Current I R — 0.01 10 µA VR = 6V INPUT Terminal Capacitance C t — 30 250 pF V=0, f = 1KHz Collector Dark Current I CER — — 100 nA VCE=200V RBE=1MΩ Collector-Emitter Breakdown Voltage BVCER 300 — — V IC=0.1mA, IF=0 RBE=1MΩ OUTPUT Emitter-Collector Breakdown Voltage BVECO 7 — — V IE=10µA IF=0 Collector Current I C 2 — — mA *1 Current Transfer Ratio CTR 20 — — % IF=10mA,VCE=10V RBE=1MΩ Collector-Emitter Saturation Voltage VCE(sat) — 0.25 0.4 V IF=10mA,IC=0.5mA RBE=1MΩ Isolation Resistance R iso 5x1010 — — Ω DC500V 40 ~ 60% R.H. Floating Capacitance C f — 0.6 — pF V=0, f=1MHz Turn - on Time t on — 5 — µs TRANSFER CHARACTERISTICS Turn - off Time t off — 5 — µs VCC=10V, IC=2mA RL=100Ω *1 CTR I I 100%C F Part No. : H11D1 ( M, S, S-TA1 ) Page : 6o f9 BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only CHARACTERISTICS CURVES Fig.1 Forward Current vs. Fig.2 Collector Power Dissipation vs. Ambient Temperature Fig.4 Forward Current vs. Forward F -25 Collector-emitter Voltage Fig.6 Collector Current vs. Fig.3 Collector-emitter saturation Voltage vs. Forward current Forward current I (m Collector power dissipation Pc (m W Collector-em itter saturation voltage V (sat) (V) Collector current Ic (m Collector-emitter voltage V (V) Ambient temperature Ta ( C) Ambient temperature Ta ( C) 125 100 150 200 Ambient Temperature o Voltage 81 6 2 0124 IF= 30mA CE 2468 1 0 Ic= 0.5mA 25mA 20mA 10mA 5mA 15mA 2 6 10 14 18 1mA 3mA 5mA 7mA 0 2 55 07 5 1 0 0 Forward current (m 0.5 100 1.91.3 Forward voltage (V) 60 C 100 C 80 C o o o o 40 C o 20 C PC (MAX.) Fig.5 Output Current vs. Forward Current Curve 0.01 Ice(on)-Norm alized output current 100 10.00 IF= 10mA VCE=1 0 V RBE=1 M Forward current IF (mA) 0.10 1.00 102 5 20 50 -55 0-55 -25 75 25 50 100 125 o Forward current IF (mA) 100 Part No. : H11D1 ( M, S, S-TA1 ) Page : 7o f9 BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only CHARACTERISTICS CURVES Fig.7 Relative Current Transfer Ratio vs. Ambient Temperature Fig.8 Collector-emitter Saturation Voltage Fig.9 Collector Dark Current vs. Ambient Temperature Fig.10 Response Time vs. Load L CEO CE vs. Ambient Temperature Ambient temperature Ta ( C) Relative current transfer ratio (% Collector-em itter saturation voltage V (sat) (V) Collector dark current I (nA) Response tim e ( s) Ambient temperature Ta ( C) Ambient temperature Ta ( C) Load resistance R (k ) 100 1.2 20 100 0.00 0.12 10080604020 10.1 100 O O O Resistance 1000 Voltage gain Av (dB) -10 Frequency f (kHz) 500 Fig.11 Frequency Response 80604020 806040 V = 200VCE 0.10 0.08 0.06 0.04 0.02 100 tf td ts tr VCE=2 V IC=2 m A 100101 VCE=5 V IC=2 m A IF=1 0 m A VCE=1 0 V IF=2 0 m A IC=1 m A Vcc Test Circuit for Frequency Response Test Circuit for Response Time Input Vcc Output td Output Output Input tr tf ts 90% 10% RL=1 0 k 1k 100 0.2 0.4 0.6 0.8 1.0 RLRD RD RL Part No. : H11D1 ( M, S, S-TA1 ) Page : 8o f9 BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only RECOMMENDED FOOT PRINT PATTERNS (MOUNT PAD) Unit : mm Part No. : H11D1 ( M, S, S-TA1 ) Page : 9o f9 BNS-OD-C131/A4