H11C4M CENTRAL | Alldatasheet

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MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Isolation Voltage V ISO 5000 V RMS Isolation Resistance (@ VIO=500V) R ISO 1011 Ω Operating Temperature Range T J -30 to +100 °C Storage Temperature Range T stg -55 to +125 °C INPUT MAXIMUM RATINGS (LED): (TA=25°C) SYMBOL UNITS Continuous Forward Current I F 50 mA Continuous Reverse Voltage V R 5.0 V Peak Forward Surge Current (tp=1μs) I FSM 1.0 A Power Dissipation P D 75 mW OUTPUT MAXIMUM RATINGS (SCR): (TA=25°C) SYMBOL UNITS Peak Repetitive Off-State Voltage V DRM,V RRM 400 V Peak Reverse Gate Voltage V RGM 6.0 V RMS On-State Current I T(RMS) 150 mA Peak On-State Current (tp=100μs) I T 10 A Peak One Cycle Surge (tp=10ms) I TSM 5.0 A INPUT ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IR VR=3.0V 10 μA VF IF=10mA 1.5 V CJ VR=0V, f=1.0MHz 50 pF H11C4M PHOTO SCR OPTOCOUPLER DIP-6 CASE Central Semiconductor Corp. TM R2 (8-December 2008) DESCRIPTION: The Central Semiconductor H11C4M is a gallium- arsenide infrared emitting Diode optically coupled with a light activated silicon controlled rectifier in a DIP-6 dual-in-line package. This device is designed for applications requiring a high degree of isolation between triggering and load circuits. MARKING: H11C4M APPLICATIONS:

  • Communications equipment
  • Solid state relays
  • Portable equipment
  • Low power logic circuits requiring a high degree of input/output isolation FEATURES:
  • Forward current I F=50mA MAX (Input)
  • On-State current IT(RMS)=150mA (Input)
  • Reverse current IR=10μA MAX (Input)
  • Blocking voltage VDRM,V RRM=400V MAX (Output)
  • Isolation test voltage 5000VRMS

Semiconductor Corp. TM H11C4M PHOTO SCR OPTOCOUPLER R2 (8-December 2008) OUTPUT ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS TYP MAX UNITS IDRM, IRRM VDRM,V RRM=400V, RGK=10kΩ, TA=100°C 150 μA VTM ITM=100mA 1.3 V IGT VD=100V, RL=10kΩ 50 μA VGT VD=100V, RL=10kΩ 1.0 V IH IT=100mA, RGK=27kΩ 500 μA COUPLER ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS TYP MAX UNITS IFT VAK=50V, RGK=10kΩ 20 mA IFT VAK=100V, RGK=27kΩ 11 mA DIP-6 CASE - MECHANICAL OUTLINE LEAD CODE: 1) ANODE (LED) 2) CATHODE (LED) 3) NO CONNECTION 4) CATHODE (SCR) 5) ANODE (SCR) 6) GATE (SCR) MARKING: H11C4M