4N25 INFINEON | Alldatasheet

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2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA www.infineon.com/opto • 1-888-Infineon (1-888-463-4636) 2–53 March 27, 2000-00

DESCRIPTION

This data sheet presents five families of Infineon Industry Standard Single Channel Phototransistor Couplers. These families include the 4N25/26/27/28 types, the 4N35/36/37/38 couplers, the H11A1/A2/ A3/A4/A5, the MCT2/2E, and MCT270/271/272/273/274/275/276/ 277 devices.Each optocoupler consists of Gallium Arsenide infra- red LED and a silicon NPN phototransistor. These couplers are Underwriters Laboratories (UL) listed to comply with a 5300 V RMS Isolation Test Voltage. This isolation performance is accomplished through Infineon double molding isolation manu- facturing process. Compliance to VDE 0884 partial discharge isola- tion specification is available for these families by ordering option 1. Phototransistor gain stability, in the presence of high isolation volt- ages, is insured by incorporating a TRansparent lOn Shield (TRIOS) on the phototransistor substrate. These isolation pro- cesses and the Infineon IS09001 Quality program results in the highest isolation performance available for a commercial plastic phototransistor optocoupler. The devices are available in lead formed configuration suitable for surface mounting and are available either on tape and reel, or in standard tube shipping containers. .010 (.25) typ. .114 (2.90) .130 (3.0) .130 (3.30) .150 (3.81) .031 (0.80) min. .300 (7.62) typ. .031 (0.80) .035 (0.90) .100 (2.54) typ. .039 (1.00) Min. .018 (0.45) .022 (0.55) .048 (0.45) .022 (0.55) .248 (6.30) .256 (6.50) .335 (8.50) .343 (8.70) pin one ID 654 123 18° 3°–9° .300–.347 (7.62–8.81) typ. Base Collector Emitter Anode Cathode NC Dimensions in Inches (mm) DEVICE TYPES Part No. CTR % Min. Part No. CTR % Min. 4N25 20 MCT2 20 4N26 20 MCT2E 20 4N27 10 MCT270 50 4N28 10 MCT271 45 –90 4N35 100 MCT272 75 –150 4N36 100 MCT273 125 –250 4N37 100 MCT274 225 –400 4N38 10 MCT275 70 –90 H11A1 50 MCT276 15 –60 H11A2 20 MCT277 100 H11A3 20 H11A4 10 H11A5 30

FEATURES

  • Interfaces with Common Logic Families
  • Input-output Coupling Capacitance < 0.5 pF
  • Industry Standard Dual-in-line 6-pin Package
  • Field Effect Stable by TRIOS
  • 5300 V RMS Isolation Test Voltage
  • Underwriters Laboratory File #E52744
  • VDE #0884 App roval Available with Option 1

APPLICATIONS

  • AC Mains Detection
  • Reed Relay Driving
  • Switch Mode Power Supply Feedback
  • Telephone Ring Detection
  • Logic Ground Isolation
  • Logic Coupling with High Frequency Noise Rejection Notes: Designing with data sheet is covered in Application Note 45. VDE PHOTOTRANSISTOR Industry Standard Single Channel

6 Pin DIP Optocoupler

2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA Phototransistor, Industry Standard www.infineon.com/opto • 1-888-Infineon (1-888-463-4636) 2–54 March 27, 2000-00 Maximum Ratings T A =25 C Emitter Surge Current (t µ Detector Package RMS 7.0 mm 7.0 mm 0.4 mm Isolation Resistance V IO =500 V, T A =25 Ω V IO =500 V, T A =100 Ω C to +150 C C to +100 C C Soldering Temperature (max. 10 s, dip soldering: distance to seating plane C 4N25/26/27/28—Characteristics T A =25 C * Indicates JEDEC registered values Emitter Symbol Min. Typ. Max. Unit Condition Forward Voltage* V F — 1.3 1.5 V I F =50 mA Reverse Current* I R — 0.1 100 µ A V R =3.0 V Capacitance C O — 25 — pF V R Detector Breakdown Voltage* Collector-Emitter BV CEO 30 —— V I C =1.0 mA Emitter-Collector BV ECO 7.0 —— I E =100 µ A Collector-Base BV CBO 70 —— I C =100 µ A I CEO (dark)* 4N25/26/27 4N28 —— 5.0 100 nA V CE =10 V, (base open) I CBO (dark)* —— 2.0 20 nA V CB =10 V, (emitter open) Capacitance, Collector-Emitter C CE — 6.0 — pF V CE Package DC Current Transfer Ratio* 4N25/26 CTR 20 50 — % V CE =10 V, I F =10 mA 4N27/28 10 30 — Isolation Voltage* 4N25 V IO 2500 —— V Peak, 60 Hz 4N26/27 1500 —— 4N28 500 —— Saturation Voltage, Collector-Emitter V CE(sat) —— 0.5 V I CE =2.0 mA, I F =50 mA Resistance, Input to Output* R IO 100 —— G Ω V IO =500 V Coupling Capacitance C IO — 0.5 — pF f=1.0 MHz Rise and Fall Times t r t f — 2.0 — µ s I F =10 mA V CE =10 V, R L =100 Ω

2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA Phototransistor, Industry Standard www.infineon.com/opto • 1-888-Infineon (1-888-463-4636) 2–55 March 27, 2000-00 4N35/36/37/38—Characteristics T A =25 C * Indicates JEDEC registered value H11A1 through H11A5—Characteristics T A =25 C Emitter Symbol Min. Typ. Max. Unit Condition Forward Voltage* V F 0.9 1.3 1.5 1.7 V I F =10 mA I F =10 mA, T A =–55 C Reverse Current* I R 0.1 10 µA VR=6.0 V Capacitance CO 25 — pF VR=0, f=1.0 MHz Detector Breakdown Voltage, Collector-Emitter* 4N35/36/37 BV CEO 30 —— V IC=1.0 mA 4N38 80 —— Breakdown Voltage, Emitter-Collector* BV ECO 7.0 —— V IE=100 µA Breakdown Voltage, Collector-Base* 4N35/36/37 BV CBO 70 —— V IC=100 µA, IB=1.0 µA 4N38 80 ——— Leakage Current, Collector-Emitter* 4N35/36/37 ICEO — 5.0 50 nA VCE=10 V, IF=0 4N38 —— 50 VCE=60 V, IF=0 Leakage Current, Collector-Emitter* 4N35/36/37 ICEO —— 500 µA VCE=30 V, IF=0, TA=100°C 4N38 — 6.0 — VCE=60 V, IF=0, TA=100°C Capacitance, Collector-Emitter CCE — 6.0 — pF VCE=0 Package DC Current Transfer Ratio* 4N35/36/37 CTR 100 —— % VCE=10 V, IF=10 mA, 4N38 20 —— VCE=1.0 V, IF=20 mA DC Current Transfer Ratio* 4N35/36/37 CTR 40 50 — % VCE=10 V, IF=10 mA, TA=–55 to 100°C4N38 —— 30 —— Resistance, Input to Output* RIO 1011 —— Ω VIO=500 V Coupling Capacitance CIO — 0.5 — pF f=1.0 MHz Switching Time* tON, tOFF — 10 — µs IC=2.0 mA, RL=100 Ω, VCC=10 V Emitter Symbol Min. Typ. Max. Unit Condition Forward Voltage H11A1 –H11A4 VF — 1.1 1.5 V IF=10 mA H11A5 — 1.1 1.7 Reverse Current IR —— 10 µA VR=3.0 V Capacitance C0 — 50 — pF VR=0, f=1.0 MHz Detector Breakdown Voltage, Collector-Emitter BV CEO 30 —— V IC=1.0 mA, IF=0 mA Breakdown Voltage, Emitter-Collector BV ECO 7.0 —— V IE=100 µA, IF=0 mA Breakdown Voltage, Collector-Base BV CBO 70 —— V IC=10 µA, IF=0 mA Leakage Current, Collector-Emitter ICEO — 5.0 50 nA VCE=10 V, IF=0 mA Capacitance, Collector-Emitter CCE — 6.0 — pF VCE=0 Package DC Current Transfer Ratio H11A1 CTR 50 —— % VCE=10 V, IF=10 mA H11A2/3 20 —— H11A4 10 —— H11A5 30 —— Saturation Voltage, Collector-Emitter VCEsat —— 0.4 V ICE=0.5 mA, IF=10 mA Capacitance, Input to Output CIO — 0.5 — pF — Switching Time tON, tOFF — 3.0 — µs IC=2.0 mA, RL=100 Ω, VCE=10 V

 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA Phototransistor, Industry Standard www.infineon.com/opto • 1-888-Infineon (1-888-463-4636) 2–56 March 27, 2000-00 MCT2/MCT2E—Characteristics TA=25°C MCT270 through MCT277—Characteristics TA=25°C Emitter Symbol Min. Typ. Max. Unit Condition Forward Voltage VF — 1.1 1.5 V IF=20 mA Reverse Current IR —— 10 µA VR=3.0 V Capacitance CO — 25 — pF VR=0, f=1.0 MHz Detector Breakdown Voltage Collector-Emitter BV CEO 30 —— V IC=1.0 mA, IF=0 mA Emitter-Collector BV ECO 7.0 —— IE=100 µA, IF=0 mA Collector-Base BV CBO 70 —— IC=10 µA, IF=0 mA Leakage Current Collector-Emitter ICBO — 5.0 50 nA VCE=10 V, IF=0 Collector-Base ICBO —— 20 — Capacitance, Collector-Emitter — CCE — 10 — pF VCE=0 Package DC Current Transfer Ratio CTR 20 60 — % VCE=10 V, IF=10 mA Capacitance, Input to Output CIO — 0.5 — pF — Resistance, Input to Output RIO — 100 — GΩ — Switching Time tON, tOFF — 3.0 — µs IC=2.0 mA, RL=100 Ω, VCE=10 V Emitter Symbol Min. Typ. Max. Unit Condition Forward Voltage VF —— 1.5 V IF=20 mA Reverse Current IR —— 10 µA VR=3.0 V Capacitance CO — 25 — pF VR=0, f=1.0 MHz Detector Breakdown Voltage Collector-Emitter BV CEO 30 —— V IC=10 µA, IF=0 mA Emitter-Collector BV ECO 7.0 —— IE=10 µA, IF=0 mA Collector-Base BV CBO 70 ——— IC=10 µA, IF=0 mA Leakage Current, Collector-Emitter ICEO —— 50 nA VCE=10 V, IF=0 mA Package DC Current Transfer Ratio MCT270 CTR 50 —— % VCE=10 V, IF=10 mA MCT271 45 — 90 MCT272 75 — 150 MCT273 125 — 250 MCT274 225 — 400 MCT275 70 — 210 MCT276 15 — 60 MCT277 100 —— Current Transfer Ratio, Collector–Emitter MCT271 –276 CTR CE 12.5 —— % VCE=0.4 V, IF=16 mA MCT277 40 —— — Collector–Emitter Saturation Voltage VCEsat —— 0.4 V ICE=2.0 mA, IF=16 mA Capacitance, Input to Output CIO — 0.5 — pF — Resistance, Input to Output RIO — 1012 — Ω VIO=500 VDC Switching Time MCT270/272 tON, tOFF —— 10 µs IC=2.0 mA, RL=100 Ω, VCE=5.0 V MCT271 —— 7.0 MCT273 —— 20 MCT274 —— 25 MCT275/277 —— 15 MCT276 —— 3.5