H11A1X ISOCOM | Alldatasheet

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0.26 0.5 Dimensions in mm 7.0 6.0 1.2 7.62 3.0 13° Max 3.35 4. 0 3. 0 2.54 7.62 6.62 0.5 H11A1X, H11A2X, H 11A3X, H 11A4X, H 11A5X H11A1, H 11A2, H 11A3, H 11A4, H 11A5 OPTICAL LY COUPLED ISOL ATOR PHOTOTRANSISTOR OUTPUT 3 4 2 5 ABSOLUTE MAXIMUM R ATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current 60mA Reverse V oltage 6V Power Dissipation 105mW OUTPUT TRANSISTOR Collector-emitter V oltage BV CEO 30V Collector-base V oltage BV CBO 70V Emitter-collector V oltage BV ECO 6V Power Dissipation 160mW POWER DISSI PA TION Total Power Dissipation 200mW (derate linearly 2.67mW/ ° C above 25°C) APPRO V ALS l UL recognised, File No. E91231 'X' SPECIFIC ATION APPRO V ALS l lVDE 0884 in 3 available lead forms : - - STD - G form - SMD approved to CECC 00802 l Certified to EN60950 by the following Test Bodies :- Nemko - Certificate No. P96101299 Fimko - Registration No. 190469-01..22 Semko - Reference No. 9620076 01 Demko - Reference No. 305567

DESCRIPTION

The H11A series of optically coupled isolators consist of infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package. FE ATURES l Options :- 10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation V oltage (5.3kV RMS ,7.5kV PK ) l All electrical parameters 100% tested l Custom electrical selections available APPLIC ATIONS l DC motor controllers l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances OPTION G 7.62SURFACE MOUNT OPTION SM 10.16 0.26 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park V iew Industrial Estate, Brenda Road Hartlepool, TS25 1YD England Tel: (01429)863609 Fax : (01429) 863581 e-mail sales@isocom.co.uk http://ww w .isocom.com 10.46 9.86 0.6 0.1 1.25 0.75

PARAMETER MIN TYP MAX UNITS TEST CONDITION Input Forward Voltage (V F ) 1.2 1.5 V I F = 10mA Reverse Voltage (V R ) 6 V I R = 10 µA Reverse Current (I R ) 10 µA V R = 6V Output Collector-emitter Breakdown (BV CEO ) 30 V I C = 1mA ( note 2 ) Collector-base Breakdown (BV CBO ) 70 V I C = 100 µA Emitter-collector Breakdown (BV ECO ) 6 V I E = 100 µA Collector-emitter Dark Current (I CEO ) 50 nA V CE = 10V Collector-base Dark Current (I CBO ) 20 nA V CE = 10V Coupled Current Transfer Ratio (CTR) H11A1 50 % 10mA I F , 10V V CE H11A2 20 % 10mA I F , 10V V CE H11A3 20 % 10mA I F , 10V V CE H11A4 10 % 10mA I F , 10V V CE H11A5 30 % 10mA I F , 10V V CE Collector-emitter Saturation VoltageV CE(SAT) 0.4 V 10mA I F , 0.5mA I C Input to Output Isolation Voltage V ISO 5300 V RMS See note 1

7500 V PK See note 1

Input-output Isolation Resistance R ISO 5x10 10 Ω V IO = 500V (note 1) Output Rise Time tr 2 µs V CC = 10V , I C = 2mA Output Fall Time tf 2 µs R L = 100 Ω fig 1 Note 1 Measured with input leads shorted together and output leads shorted together. Note 2 Special Selections are available on request. Please consult the factory. 7/12/00 ELECTRICAL CHARACTERISTICS ( T A = 25°C Unless otherwise noted ) Output Output R L = 100 Ω Input 10% 90% 90% 10% ton tr FIG 1 V CC toff tf

Ambient temperature T A ( °C ) 150 200 Ambient temperature T A ( °C ) Collector power dissipation P C (mW) -30 0 25 50 75 100 125 Collector Power Dissipation vs. Ambient Temperature Forward Current vs. Ambient Temperature 100 Forward current I F (mA) -30 0 25 50 75 100 125 1 2 5 10 20 50 0.4 0.6 0.8 1.0 1.2 0.2 1.4 V CE = 10V T A = 25°C Relative current transfer ratio Relative Current Transfer Ratio vs. Forward Current Forward current I F (mA) 1 2 5 10 20 50 1.2 1.6 2.0 2.4 2.8 V CE = 0.5V T A = 25°C Relative current transfer ratio Relative Current Transfer Ratio vs. Forward Current Forward current I F (mA) 0.8 0.4 0.5 1.0

1.5 I F = 10mA

V CE = 10V Relative Current Transfer Ratio vs. Ambient Temperature Relative current transfer ratio Ambient temperature T A ( °C ) -30 0 25 50 75 100 -30 0 25 50 75 100 Ambient temperature T A ( °C ) Collector-emitter saturation voltage V CE(SAT) (V) Collector-emitter Saturation Voltage vs. Ambient Temperature 0.02 0.04 0.06 0.08 0.10 0.12 0.14 I F = 10mA I C = 0.5mA