H1008 KISEMICONDUCTOR | Alldatasheet
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█ LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions ICBO Collector Cut-off Current 100 nA VCB=60V , IE=0 IEBO Emitter Cut-off Current 100 nA VEB=5V , IC=0 HFE(1) DC Current Gain 40 400 VCE=2V , IC=50mA VCE(sat) Collector- Emitter Saturation V oltage 0.2 0.4 V IC=500mA, IB=50mA VBE(sat) Base-Emitter Saturation V oltage 0.86 1.1 V IC=500mA, IB=50mA BVCBO Collector-Base Breakdown V oltage 80 V IC=100μA, IE=0 BVCEO Collector-Emitter Breakdown V oltage 60 V IC=10mA, IB=0 BVEBO Emitter-Base Breakdown V oltage 8 V IE=10μA，IC=0 fT Current Gain-Bandwidth Product 30 50 MHz VCE=10V , IC=50mA Cob Output Capacitance 8 pF VCB=10V , IE=0，f=1MHz █ hFE Classification R O Y GR 40—80 70—140 120—240 240—400 1―Emitter，E 2―Base，B 3―Collector，C TO-92 C1008 NPN S I L I C O N T R A N S I S T O R