GTVA311801FA

GTVA311801FA CREE | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 5

Technical content

Features

• GaN on SiC HEMT technology
• Broadband internal input matching
• Typical pulsed CW performance (class AB), 2700 – 3100 MHz,

50 V, 300 µs pulse width, 10% duty cycle

• Output power at P 3dB = 180 W - Drain efficiency = 70% - Gain (P 3dB) = 15 dB
• Pb-free and RoHS compliant

Description

The GTVA311801FA is a 180-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2700 to 3100 MHz frequecy band. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Target RF Characteristics Pulsed CW Specifications (tested in Wolfspeed class AB test fixture) VDD = 50 V, IDQ = 20 mA, POUT = 180 W, ƒ = 3100 MHz, pulse width = 300 µs, duty cycle = 10% Characteristic Symbol Min Typ Max Unit Gain Gps — 15 — dB Drain Efficiency hD — 70 — % Advance GTVA311801FA

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 02, 2018-05-01 2Advance GTVA311801FA DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage VGS = –8 V, ID = 21 mA V(BR)DSS 150 — — V Drain-source Leakage Current VGS = –8 V, VDS = 50 V IDSS — — 5 mA Gate Threshold Voltage VDS = 10 V, ID = 21 mA VGS(th) –3.8 –3.0 –2.3 V Recommended Operating Conditions Parameter Conditions Symbol Min Typ Max Unit Drain Operating Voltage VDD 0 — 55 V Gate Quiescent Voltage VDS = 50 V, ID = 20 mA VGS(Q) — –3.17 — V Absolute Maximum Ratings Parameter Symbol Value Unit Drain-source Voltage VDSS 125 V Gate-source Voltage VGS –10 to +2 V Gate Current IG 20 mA Drain Current ID 7.5 A Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated within the operating voltage range (V DD) specified above. Thermal Chracteristics Parameter Symbol Value Unit Thermal Resistance, Junction to Case RqJC TBD °C/W

Ordering Information

Type and Version Order Code Package and ECCN Shipping GTVA311801FA V1 R0 TBD H-37265J-2, 3A001.b.3a Tape & Reel, 50 pcs GTVA311801FA V1 R2 TBD H-37265J-2, 3A001.b.3a Tape & Reel, 250 pcs Evaluation Board Order Code Frequency Description ECCN LTN/GTVA311801FA V1 2700 – 3100 MHz Class AB, RO4350B, 0.508 mm thick 3A001.b.3a

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 02, 2018-05-01 3Advance GTVA311801FA See next page for package dimensions S G D H-37265J- 2_03_pd_20 16- 12-01-bn Pin Description D Drain G Gate S Source (flange) Pinout Diagram (top view)

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 02, 2018-05-01 4Advance GTVA311801FA Package Outline Specifications Package H-37265J-2 CL LC D G 2X 6.35 [.250] LID 10.16±.25 [.400±.010] FLANGE 10.16 [.400] 45° X .64 [.025] 2X 2.59±.51 [.102±.020] 10.16±.25 [.400±.010] SPH 1.57 [.062] FLANGE 4X R0.63 [R.025] MAX 1.02 [.040] S (15.34 [.604]) 3.61±.38 [.142±.015] 10.16 [.400] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D – drain; G – gate; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm; alternate dimensions are inches 3. All tolerances ± 0.127 [0.005] 4. Pins: G – gate, D – drain, S – source 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]

Revision History

Revision Date Data Sheet Page Subjects (major changes at each revision) www.wolfspeed.comRev. 02, 2018-05-01 5Advance GTVA311801FA Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat- ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact:

4600 Silicon Drive

Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816 Confidential, Limited Internal Distribution 01 2017-01-26 Advance all Advance Specification provides target requirements for product development 01.1 2018-02-01 Advance 1 Updated pulsed CW performance and pulsed CW spec table 02 2018-05-01 Advance All Converted to Wolfspeed Data Sheet Updated DC Characteristics and max ratings table format