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Technical content

Features

  • GaN on SiC HEMT technology
  • Input matched
  • Typical pulsed CW performance, 2690 MHz, 48 V, combined outputs - Output power at P 3dB = 340 W - Drain efficiency = 70% - Gain = 16 dB
  • Capable of handling 10:1 VSWR @48 V, 80 W (CW) output power
  • Human Body Model Class 1B (per ANSI/ESDA/ JEDEC JS-001)
  • Low thermal resistance
  • Pb-free and RoHS compliant -80 -60 -40 -20 29 33 37 41 45 49 53 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(M) = 200 mA, IDQ(PK) = 200 mA, ƒ = 2690 MHz 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW Gain Efficiency PAR @ 0.01% CCDF gtva263202fc_g1 GTVA263202FC

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-05-08 2GTVA263202FC DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage VGS = –8 V, ID = 21 mA V(BR)DSS 150 — — V Drain-source Leakage Current VGS = –8 V, VDS = 10 V IDSS — — 5 mA Gate Threshold Voltage VDS = 10 V, ID = 21 mA VGS(th) –3.8 –3.0 –2.3 V Recommended Operating Conditions Parameter Conditions Symbol Min Typ Max Unit Drain Operating Voltage VDD 0 — 50 V Gate Quiescent Voltage VDS = 50 V, ID = 200 mA VGS(Q) — –2.8 — V Absolute Maximum Ratings Parameter Symbol Value Unit Drain-source Voltage VDSS 125 V Gate-source Voltage VGS –10 to +2 V Gate Current IG 20 mA Drain Current ID 7.5 A Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated within the operating voltage range (V DD) specified above. Thermal Characteristics Characteristic Symbol Value Unit Thermal Resistance CASE = 70 °C, 80 W (CW)) RqJC 0.5 °C/W

Ordering Information

Type and Version Order Code Package Description Shipping GTVA263202FC V1 R0 GTVA263202FC-V1-R0 H-37248-4, earless flange Tape & Reel, 50 pcs GTVA263202FC V1 R2 GTVA263202FC-V1-R2 H-37248-4, earless flange Tape & Reel, 250 pcs

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-05-08 3GTVA263202FC Typical Performance (data taken in a production test fixture) -75 -65 -55 -45 -35 -25 -15 29 33 37 41 45 49 53 Efficiency(%) ACP Up & Low (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(M) = 200 mA, IDQ(PK) = 200 mA, ƒ = 2690 MHz, 3GPP WCDMA signal, PAR = 10 dB, BW = 3.84 MHz ACPU ACPL Eff gtva263202fc_g2 -35 -30 -25 -20 -15 -10 -35 -30 -25 -20 -15 -10 2550 2600 2650 2700 2750 Return Loss (dB) ACP Up (dBc) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 48 V, IDQ(M) = 200 mA, IDQ(PK) = 200 mA, POUT = 49.03 dBm, 3GPP WCDMA signal, PAR = 10 dB Return Loss ACP Up gtva263202fc_g4 2550 2600 2650 2700 2750 Efficiency (%) Gain (dB) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 48 V, IDQ(M) = 200 mA, IDQ(PK) = 200 mA, POUT = 49.03 dBm, 3GPP WCDMA signal, PAR = 10 dB Efficiency Gain gtva263202fc_g3 36 38 40 42 44 46 48 50 52 54 56 58 Efficiency (%) Gain (dB) Output Power (dBm) CW Pulse Performance at Various VDD IDQ(M) = 200mA, IDQ(PK) = 200mA, ƒ = 2690 MHz VDD = 44 V VDD = 48 V VDD = 52 V Gain Efficiency gtva263202fc_g6

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-05-08 4GTVA263202FC Load Pull Performance Load Pull Performance (per side) – Pulsed CW signal: 10 µs, 10% duty cycle, 48 V, IDQ = 200 mA P3dB Max Output Power Max PAE Freq [MHz] Zs [W] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Typical Performance (cont.) -28 -24 -20 -16 -12 2500 2550 2600 2650 2700 2750 2800 Input Return Loss (dB) Gain (dB) Frequency (MHz) Small Signal CW Gain & Input Return Loss VDD = 48 V, IDQ(M) = 200 mA, IDQ(PK) = 200 mA IRL Gain gtva263202fc_g7

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-05-08 5GTVA263202FC Reference Circuit, 2620 - 2690 MHz Reference circuit assembly diagram (not to scale) C208 C209 C204 C205 C211 C201 C207 C203 C206 C102 R101 C101 C109 R102 C104 C105 C106 C107 C103 C202 C210 C108 RF_IN RF_OUT VDD VDD G t va26 320 2f c_C D_05 - 18 - 20 18 RO4350, 20 MIL (61) GTVA263202FC_IN_04 GTVA263202FC_ OUT_04 RO4350, 20 MIL VDD VDD

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-05-08 6GTVA263202FC Reference Circuit (cont.) Reference Circuit Assembly DUT GTVA263202FC V1 Test Fixture Part No. LTN/GTVA263202FC V1 PCB Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66, ƒ = 2620 - 2690 MHz Find Gerber files for this test fixture on the Wolfspeed Web site at www.wolfspeed.com/RF Components Information Component Description Manufacturer P/N Input C101, C104, C106, C109 Capacitor, 10 pF ATC ATC800A100JT250T C102, C107 Capacitor, 1 µF TDK Corporation C4532X7R2A105M230KA C103, C108 Capacitor, 10 µF Panasonic Electronic Components EEE-HB1H100AP C105 Capacitor, 1 pF ATC ATC800A1R0CT250T L1, L2 Inductor, 12 nH Coilcraft 0908SQ-12NGLB R101, R102 Resistor, 5.6 ohms Panasonic Electronic Components ERJ-3GEYJ5R6V Output C201, C209 Capacitor, 1 µF TDK Corporation C4532X7R2A105M230KA C202, C210 Capacitor, 220 µF Panasonic Electronic Components ECA-2AHG221 C203, C205, C206, C208 Capacitor, 10 pF ATC ATC800A100JT250T C204 Capacitor, 1.4 pF ATC ATC800A1R4CT250T C207, C211 Capacitor, 10 µF TDK Corporation C5750X7S2A106M230KB Pinout Diagram (top view) Pin Description D1 Drain device 1 D2 Drain device 2 G1 Gate device 1 G2 Gate device 2 S Source (flange) S D1 D2 G1 G2

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-05-08 7GTVA263202FC Package Outline Specifications Package H-37248-4 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. CL LC CL 2X 12.70 [.500] 19.81±0.20 [.780±0.008] 4X 3.81 [.150] LID 9.40 [.370] FLANGE 9.78 [.385] 2X 4.83±0.51 [.190±0.020] 3.76±0.25 [.148±0.010] SPH 1.57 [.062] 4X R0.76+0.13 -0.38 [R.030 +0.005 -0.015 ]D1 D2 G1 G2 1.02 [.040] 20.57 [.810]S 2X 45° X 2.72 [45° X .107] (8.89 [.350]) (5.08 [.200]) 19.43±0.51 [.765±0.020] 0.0381 [.0015] -A-

www.wolfspeed.comRev. 04, 2018-05-08 GTVA263202FC Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat- ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact:

4600 Silicon Drive

Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816

Revision History

Revision Date Data Sheet Page Subjects (major changes since last revision) 01 2016-01-14 Advance All Data Sheet reflects advance specification for product development 02 2016-08-30 Production All Data Sheet reflects released product specification 03 2017-04-06 Production 1 Remove "Integrated ESD protection" from Features Restructure tables for clarity. 04 2018-05-08 Production All Converted to Wolfspeed Data Sheet