GTVA262711FA CREE | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 9

Technical content

Features

  • GaN on SiC HEMT technology
  • Input matched
  • Typical pulsed CW performance: 10 µs pulse width, 10% duty cycle, 2690 MHz, 48 V - Output power at P3dB = 300 W - Efficiency = 62% - Gain = 19.1 dB
  • Human Body Model Class 1B (per ANSI/ESDA/ JEDEC JS-001)
  • Capable of handling 10:1 VSWR @48 V, 70 W (CW) output power
  • Pb-free and RoHS-compliant

Description

The GTVA262711FA is a 300-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. RF Characteristics Single-carrier WCDMA Specifications (tested in Wolfspeed production test fixture) VDD = 48 V, IDQ = 320 mA, POUT = 70 W avg, ƒ = 2690 MHz. 3GPP WDMA signal, 3.84 MHz channel bandwidth, peak/average = 10 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 16 18 – dB Drain Efficiency hD 38 38.5 – % Adjacent Channel Power Ratio ACPR – –27.5 –25 dBc Output PAR @ 0.01% CCDF OPAR 5.7 6.3 — dB -60 -40 -20 25 30 35 40 45 50 55 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 320 mA, ƒ = 2690 MHz 3GPP WCDMA signal, 10 dB PAR

3.84 MHz bandwidth

PAR @ 0.01% CCDF g262711fa-gr1a GTVA262711FA Package H-87265J-2 GTVA262711FA

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04.2, 2019-01-07 2GTVA262711FA DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage V GS = –8 V, ID = 32 mA V (BR)DSS 150 — — V Drain-source Leakage Current VGS = –8 V, VDS = 10 V I DSS — — 4.5 mA Gate Threshold Voltage VDS = 10 V, ID = 32 mA V GS(th) –3.8 –3.0 –2.3 V Recommended Operating Conditions Parameter Conditions Symbol Min Typ Max Unit Operating Voltage VDD 0 — 50 V Gate Quiescent Voltage VDS = 50 V, ID = 320 mA V GS(Q) — –3.0 — V Absolute Maximum Ratings Parameter Symbol Value Unit Drain-source Voltage VDSS 125 V Gate-source Voltage VGS –10 to +2 V Gate Current IG 32 mA Drain Current ID 12 A Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated within the operating voltage range (VDD) specified above. Thermal Characteristics Characteristic Symbol Value Unit Thermal Resistance CASE = 70 °C, 70 W (CW), VDD = 48 V, IDQ = 320 mA,

2690 MHz)

RqJC 1.0 °C/W

Ordering Information

Type and Version Order Code Package Shipping GTVA262711FA V2 R0 GTVA262711FA-V2-R0 H-87265J-2 Tape & Reel, 50 pcs GTVA262711FA V2 R2 GTVA262711FA-V2-R2 H-87265J-2 Tape & Reel, 250 pcs

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04.2, 2019-01-07 3GTVA262711FA Typical Performance (data taken in Wolfspeed production test fixture) -60 -40 -20 25 30 35 40 45 50 55 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 320 mA, ƒ = 2655 MHz, 3GPP WCDMA signal, 10 dB PAR,

3.84 MHz bankdwidth

PAR @ 0.01% CCDF g262711fa-gr1b -60 -40 -20 25 30 35 40 45 50 55 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 320 mA, ƒ = 2620 MHz, 3GPP WCDMA signal, 10 dB PAR, PAR @ 0.01% CCDF g262711fa-gr1c -70 -60 -50 -40 -30 -20 -10 25 30 35 40 45 50 55 Efficiency (%) ACP Up, ACP Low (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 320 mA, ƒ = 2690 MHz 3GPP WCDMA signal, 10 dB PAR, -70 -60 -50 -40 -30 -20 -10 25 30 35 40 45 50 55 Efficiency (%) ACP Up, ACP Low (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ= 320 mA, ƒ = 2655 MHz, 3GPP WCDMA signal, 10 dB PAR,

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04.2, 2019-01-07 4GTVA262711FA Typical Performance (cont.) -70 -60 -50 -40 -30 -20 -10 25 30 35 40 45 50 55 Efficiency (%) ACP Up, ACP Low (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ= 320 mA, ƒ = 2620 MHz, 3GPP WCDMA signal, 10 dB PAR, 2500 2550 2600 2650 2700 2750 Efficiency (%) Gain (dB) Frequency (MHz) Single-carrier WCDMA Broadband VDD = 48 V, IDQ = 320 mA, P OUT = 48.45 dBm, 3GPP WCDMA signal, 10 dB PAR Gain Efficiency g262711fa-gr3 -30 -25 -20 -15 -10 -35 -30 -25 -20 -15 2500 2550 2600 2650 2700 2750 Return Loss (dB) ACP Low, ACP Up (dBc) Frequency (MHz) Single-carrier WCDMA Broadband VDD = 48 V, IDQ = 320 mA, POUT = 48.45 dBm 3GPP WCDMA signal, 10 dB PAR ACP Up ACP Low IRL g262711fa-gr4 25 30 35 40 45 50 55 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 48 V, IDQ = 320 mA

2620 MHz

2655 MHz

2690 MHz

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04.2, 2019-01-07 5GTVA262711FA Typical Performance (cont.) 27 32 37 42 47 52 57 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance at various VDD IDQ = 320 mA, ƒ = 2690 MHz (series show supply voltage) 44 V 48 V 52 V g262711fa-gr6 Gain Efficiency -35 -30 -25 -20 -15 -10 2450 2550 2650 2750 2850 Input Return Loss (dB) Gain (dB) Frequency (MHz) CW Performance Small Signal Gain & Input Return Loss VDD = 48 V, IDQ = 320 mA Gain IRL g262711fa-gr7 Pulsed CW signal – 10 µsec, 10% duty cycle; 48 V, 320 mA P3dB Class AB Max Output Power Max Drain Efficiency Freq [MHz] Zsource [W] ZL 2ƒ0 [W] Zload [W] Gain [dB] P3dB [dBm] P3dB [W] hD [%] Zload [W] Gain [dB] P3dB [dBm] P3dB [W] hD [%] Load Pull Performance

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04.2, 2019-01-07 6GTVA262711FA Reference circuit assembly diagram (not to scale) Reference Circuit tuned for 2620 to 2690 MHz DUT GTVA262711FA V2 Test Fixture Part No. LTN/GTVA262711FA-V2LTN/GTVA262711FA PCB Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, εr = 3.66 Find Gerber files for this test fixture on the Wolfspeed Web site at http://www.wolfspeed.com/RF g t v a 2 6 2 7 1 1 f a _ C D _ 0 2 - 0 8 - 2 0 1 7 - b n C203 C204 VDD RF_OUT C207 C201 C202 C205 C206 R101 RF_IN C106 C107 R102 C103 C104 VGG C101 C102 GTVA262711FA_IN_01 RO4350, 20 MILRO4350, 20 MIL GTVA262711FA OUT_01 C105

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04.2, 2019-01-07 7GTVA262711FA Reference Circuit (cont.) Components Information Component Description Manufacturer P/N Input C101 Capacitor, 33 pF ATC ATC800A330JT250T C102 Capacitor, 1 µF TDK Corporation C4532X7R2A105M230KA C103 Capacitor, 10 µF TDK Corporation C5750X5R1H106K230KA C104 Capacitor, 100 µF Panasonic Electronic Components EEV-HD1V101P C105 Capacitor, 1.8 pF ATC ATC800A1R8CT250T C106, C107 Capacitor, 12 pF ATC ATC800A120JT250T L1 Inductor, 22 nH ATC 0805WL220JT R101 Resistor, 5.6 ohms Panasonic Electronic Components ERJ-8RQJ5R6V R102 Resistor, 10 ohms Panasonic Electronic Components ERJ-3GEYJ100V Output C201 Capacitor, 1.1 pF ATC ATC800A1R1CT250T C202, C206 Capacitor, 12 pF ATC ATC800A120JT250T C203 Capacitor, 1 µF TDK Corporation C4532X7R2A105M230KA C204 Capacitor, 10 µF TDK Corporation C5750X5R1H106K230KA C205 Capacitor, 0.4 pF ATC ATC800A0R4CT250T C207 Capacitor, 220 µF Panasonic Electronic Components ECA-2AHG221 S G D H-37265J- 2_03_pd_20 16- 12-01-bn Pinout Diagram (top view) Lead connections for GTVA262711FA Pin Description D Drain Device G Gate Device S Source (flange)

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04.2, 2019-01-07 8GTVA262711FA Package Outline Specifications Package H-87265J-2 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D – drain; G – gate; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. CL LC D G 6.35 [.250] LID 10.16±.25 [.400±.010] 45° X .64 [.025] 2.59±.51 [.102±.020] 10.16±.25 [.400±.010] SPH 1.57 [.062] 1.02 [.040] S (15.34 [.604]) 3.63±.38 [.143±.015] H-87265J-2_po-03_03-03-2017-bnFLANGE R0.63 [R.025] MAX FLANGE 10.16 ± 0.191 [.400 ± .0075] 10.16 ± 0.191 [.400 ± .0075] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994 2. Primary dimensions are mm; alternate dimensions are inches 3. All tolerances ± 0.127 [.005] 4. Pins: D – drain; G – gate; S – source 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]

www.wolfspeed.comRev. 04.2, 2019-01-07 Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat- ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. For more information, please contact:

4600 Silicon Drive

Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816 GTVA262711FA

Revision History

01 2016-06-10 Advance All Proposed specification for new product development. 02 2017-03-03 Production All Data Sheet represents released product specifications, including refer- ence circuit and updated performance information. 03 2017-03-31 Production 1 Remove "Integrated ESD protection" from Features Restructure tables for clarity. 04 2018-07-05 Production All Revised to V2. Converted to Wolfspeed Data Sheet. 04.1 2018-08-02 Production 1 Updated production test spec 04.2 2019-01-07 Production 6 Corrected test fixture p/n