GTVA262701FA-V2-R2

GTVA262701FA CREE | Alldatasheet

Document overview

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Technical content

Features

• GaN on SiC HEMT technology
• Input matched
• Typical pulsed CW performance: 10 µs pulse width, 10% duty cycle, 2690 MHz, 48 V - Output power at P 3dB = 270 W - Efficiency = 66% - Gain = 18.1 dB
• Human Body Model Class 1B (per ANSI/ESDA/ JEDEC JS-001)
• Capable of handling 10:1 VSWR @48 V, 60 W (WCDMA) output power
• Pb-free and RoHS compliant

Description

The GTVA262701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermal- ly-enhanced surface-mount package with earless flange. RF Characteristics Single-carrier WCDMA Specifications (tested in Wolfspeed production test fixture) VDD = 48 V, IDQ = 320 mA, POUT = 60 W avg, ƒ = 2690 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 16.5 17 — dB Drain Efficiency hD 40 42 — % Adjacent Channel Power Ratio ACPR — –28 –27 dBc Output PAR @ 0.01% CCDF OPAR 5.5 6.2 — dB -60 -40 -20 25 30 35 40 45 50 55 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 320 mA, ƒ = 2690 MHz. 3GPP WCDMA signal, 10 dB PAR,

3.84 MHz bandwidth

PAR @ 0.01% CCDF g262701fa-gr1

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04.2, 2019-01-07 2GTVA262701FA DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage VGS = –8 V, ID = 10 mA V(BR)DSS 150 — — V Drain-source Leakage Current VGS = –8 V, VDS = 10 V IDSS — — 4.5 mA Gate Threshold Voltage VDS = 10 V, ID = 32 mA VGS(th) –3.8 –3.0 –2.3 V Recommended Operating Conditions Parameter Conditions Symbol Min Typ Max Unit Operating Voltage VDD 0 — 55 V Gate Quiescent Voltage VDS = 50 V, ID = 320 mA VGS(Q) — –3.0 — V Absolute Maximum Ratings Parameter Symbol Value Unit Drain-source Voltage VDSS 125 V Gate-source Voltage VGS –10 to +2 V Gate Current IG 32 mA Drain Current ID 12 A Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated within the operating voltage range (V DD) specified above. Thermal Characteristics Characteristic Symbol Value Unit Thermal Resistance CASE = 70 °C, 60 W (CW), VDD = 48 V, IDQ = 320 mA,

2690 MHz)

RqJC 1.1 °C/W

Ordering Information

Type and Version Order Code Package Shipping GTVA262701FA V2 R0 GTVA262701FA-V2-R0 H-87265J-2 Tape & Reel, 50 pcs GTVA262701FA V2 R2 GTVA262701FA-V2-R2 H-87265J-2 Tape & Reel, 250 pcs

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04.2, 2019-01-07 3GTVA262701FA Typical Performance (data taken in Wolfspeed production test fixture) -70 -60 -50 -40 -30 -20 -10 25 30 35 40 45 50 55 Efficiency (%) ACP Up, ACP Low (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ= 320 mA, ƒ = 2690 MHz. 3GPP WCDMA signal, 10 dB PAR, 2500 2550 2600 2650 2700 2750 Efficiency (%) Gain (dB) Frequency (MHz) Single-carrier WCDMA Broadband VDD = 48 V, IDQ = 320 mA, P OUT = 47.78 dBm 3GPP WCDMA signal, 10 dB PAR g262701fa-gr3 Gain Efficiency -35 -30 -25 -20 -15 -10 -40 -35 -30 -25 -20 -15 2500 2550 2600 2650 2700 2750 Return Loss (dB) ACP Up, ACP Low (dBc) Frequency (MHz) Single-carrier WCDMA Broadband VDD = 48 V, IDQ = 320 mA, POUT = 47.78 dBm 3GPP WCDMA signal, 10 dB PAR ACPU ACPL IRL g262701fa-gr4 29 33 37 41 45 49 53 57 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 48 V, IDQ = 320 mA series show frequency

2620 MHz

2655 MHz

2690 MHz

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04.2, 2019-01-07 4GTVA262701FA 25 29 33 37 41 45 49 53 57 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance at selected VDD IDQ = 320 mA, ƒ = 2690 MHz series show voltage 44 V 48 V 52 V g262701fa-gr6 Gain Efficiency -50 -45 -40 -35 -30 -25 -20 -15 -10 2350 2450 2550 2650 2750 2850 Input Return Loss (dB) Gain (dB) Frequency (MHz) CW Performance, Small Signal VDD = 48 V, IDQ = 320 mA Gain IRL Typical Performance (cont.) Pulsed CW signal – 10 µsec, 10% duty cycle; 48 V, 320 mA P3dB Class AB Max Output Power Max Drain Efficiency Freq [MHz] Zsource [W] ZL 2f0 [W] Zload [W] Gain [dB] P3dB [dBm] P3dB [W] hD [%] Zload [W] Gain [dB] P3dB [dBm] P3dB [W] hD [%] Load Pull Performance

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04.2, 2019-01-07 5GTVA262701FA Reference Circuit tuned for 2620 to 2690 MHz Reference Circuit Assembly DUT GTVA262701FA V2 Test Fixture Part No. LTN/GTVA262701FA-V2 PCB Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66 Find Gerber files for this test fixture on the Wolfspeed Web site at http://www.wolfspeed.com/RF RO4350, 20 MIL (61)RO4350, 20 MIL GTVA262701FA_IN_01 (61) GTVA262701FA OUT_01 C203 C204 C208 C104 C106 C107 R102 C105 R101 C101 C103 C102 C201 C206 C205 RF_OUTRF_IN C207 g t v a 2 6 2 7 0 1 f a _ C D _ 0 2 - 0 9 - 2 0 1 7 - b n C202 VGG VDD Reference circuit assembly diagram (not to scale)

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04.2, 2019-01-07 6GTVA262701FA Reference Circuit tuned for 2620 to 2690 MHz Components Information Component Description Manufacturer P/N Input C101 Capacitor, 33 pF ATC ATC800A330JT250T C102 Capacitor, 1 µF TDK Corporation C4532X7R2A105M230KA C103 Capacitor, 10 µF TDK Corporation C5750X5R1H106K230KA C104 Capacitor, 100 µF Panasonic Electronic Components EEV-HD1V101P C105 Capacitor, 1.8 pF ATC ATC800A1R8CT250T C106, C107 Capacitor, 12 pF ATC ATC800A120JT250T L1 Inductor, 22 nH ATC 0805WL220JT R101 Resistor, 5.6 ohms Panasonic Electronic Components ERJ-8RQJ5R6V R102 Resistor, 10 ohms Panasonic Electronic Components ERJ-3GEYJ100V Output C201 Capacitor, 1.1 pF ATC ATC800A1R1CT250T C202, C207 Capacitor, 12 pF ATC ATC800A120JT250T C203 Capacitor, 1 µF TDK Corporation C4532X7R2A105M230KA C204 Capacitor, 10 µF TDK Corporation C5750X5R1H106K230KA C205 Capacitor, 0.9 pF ATC ATC800A0R9CT250T C206 Capacitor, 0.4 pF ATC ATC800A0R4CT250T C208 Capacitor, 220 µF Panasonic Electronic Components ECA-2AHG221 S G D Pinout Diagram (top view) Lead connections for GTVA262701FA Pin Description D Drain Device G Gate Device S Source (flange)

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04.2, 2019-01-07 7GTVA262701FA Package Outline Specifications Package H-87265J-2 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D – drain; G – gate; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. CL LC D G 6.35 [.250] LID 10.16±.25 [.400±.010] 45° X .64 [.025] 2.59±.51 [.102±.020] 10.16±.25 [.400±.010] SPH 1.57 [.062] 1.02 [.040] S (15.34 [.604]) 3.63±.38 [.143±.015] H-87265J-2_po-03_03-03-2017-bnFLANGE R0.63 [R.025] MAX FLANGE 10.16 ± 0.191 [.400 ± .0075] 10.16 ± 0.191 [.400 ± .0075] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994 2. Primary dimensions are mm; alternate dimensions are inches 3. All tolerances ± 0.127 [.005] 4. Pins: D – drain; G – gate; S – source 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]

www.wolfspeed.comRev. 04.2, 2019-01-07 Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat- ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. For more information, please contact:

4600 Silicon Drive

Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816 GTVA262701FA

Revision History

01 2016-03-31 Advance All Data Sheet reflects advance specification for product development 02 2017-03-03 Production All Data Sheet represents released product specifications, including refer- ence circuit and updated performance information. 03 2017-03-31 Production 1 Remove "Integrated ESD protection" from Features Restructure tables for clarity. 04 2018-07-05 Production All Revised to V2. Converted to Wolfspeed data sheet. 04.1 2018-08-02 Production 1 Updated production test spec 04.2 2019-01-07 Production 5 Corrected test fixture p/n