GTVA261802FC-V1-R0

GTVA261802FC CREE | Alldatasheet

Document overview

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Technical content

Features

• GaN on SiC HEMT technology
• Input matched
• Typical Pulsed CW performance,combined outputs,

2690 MHz, 48 V, 10 µs pulse width, 10% duty cycle

• Output power at P 3dB = 170 W - Drain Efficiency @ P3dB = 65.5% - Gain @ P3dB = 15 dB
• Capable of handling 10:1 VSWR @ 48 V, 180 W (CW) output power
• Human Body Model Class 1A (per ANSI/ESDA/JEDEC JS-001)
• Low thermal resistance
• Pb-free and RoHS compliant

Description

The GTVA261802FC is a 170-watt GaN on SiC high electron mobility tran- sistor for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. RF Characteristics Single-carrier WCDMA Specifications (tested in Wolfspeed production test fixture) VDD = 48 V, IDQ = 160 mA, POUT = 50 W avg, ƒ = 2690 MHz, 3GPP, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 15.5 16.8 — dB Drain Efficiency hD 40 43 — % Adjacent Channel Power Ratio ACPR — –27 –24.5 dBc Output PAR @ 0.01% CCDF OPAR 4.5 5.3 — dB GTVA261802FC Package H-37248C-4 -60 -40 -20 27 32 37 42 47 52 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 160 mA, ƒ = 2690 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW Gain Efficiency PAR @ 0.01% CCDF gtva261802fc_g1

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 02, 2018-09-25 2GTVA261802FC DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage VGS = –8 V, ID = 10 mA V(BR)DSS 150 — — V Drain-source Leakage Current VGS = –8 V, VDS = 10 V IDSS — — 1.5 mA Gate Threshold Voltage VDS = 10 V, ID = 10 mA VGS(th) –3.8 –3.0 –2.3 V Recommended Operating Conditions Parameter Conditions Symbol Min Typ Max Unit Operating Voltage VDD 0 — 50 V Gate Quiescent Voltage VDS = 48 V, ID = 160 mA VGS(Q) –3.60 –2.97 –2.30 V Absolute Maximum Ratings Parameter Symbol Value Unit Drain-source Voltage VDSS 125 V Gate-source Voltage VGS –10 to +2 V Gate Current IG 10.8 mA Drain Current ID 4 A Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings; exceeing only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated within the operating voltage range (VDD) specified above. Thermal Chracteristics Parameter Symbol Value Unit Thermal Resistance (TCASE = 70ºc, 100 W CW) RqJC 1.06 °C/W

Ordering Information

Type and Version Order Code Package Description Shipping GTVA261802FC V1 R0 GTVA261802FC-V1-R0 H-37248C-4, earless flange Tape & Reel, 50 pcs GTVA261802FC V1 R2 GTVA261802FC-V1-R2 H-37248C-4, earless flange Tape & Reel, 250 pcs

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 02, 2018-09-25 3GTVA261802FC Typical Performance (data taken in test fixture) -70 -60 -50 -40 -30 -20 -10 27 32 37 42 47 52 Efficiency (%) ACP Up & Low (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 160 mA, ƒ = 2690 MHz, 3GPP WCDMA signal, PAR = 10 dB, BW = 3.84 MHz ACPU ACPL Efficiency gtva261802fc_g2 35 2550 2600 2650 2700 2750 Efficiency (%) Gain (dB) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 48 V, IDQ(MAIN) = 160 mA, POUT = 47 dBm, 3GPP WCDMA signal, PAR = 10 dB Efficiency Gain gtva261802fc_g3 -30 -25 -20 -15 -35 -30 -25 -20 2550 2600 2650 2700 2750 Return Loss (dB) ACPL & ACP Up (dBc) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 48 V, IDQ(MAIN) = 160 mA, POUT = 47 dBm, 3GPP WCDMA signal, PAR = 10 dB ACPU ACPL IRL gtva261802fc_g4 0 29 33 37 41 45 49 53 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 48 V, IDQ(MAIN) = 160 mA 2620MHz Gain 2655MHz Gain 2690MHz Gain 2620MHz Eff 2655MHz Eff 2690MHz Eff gtva261802fc_g5

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 02, 2018-09-25 4GTVA261802FC Typical Performance (cont.) Load Pull Performance Each Side Load Pull Performance – Pulsed CW signal: 10 µs, 10% duty cycle, 48 V, IDQ = 80 mA, class AB P3dB Max Output Power Max Drain Efficiency Freq [MHz] Zs [W] ZL [W] Gain [dB] P3dB [dBm] P3dB [W] hD [%] ZL [W] Gain [dB] P3dB [dBm] P3dB [W] hD [%] Peak Side Load Pull Performance – Pulsed CW signal: 10 µs, 10% duty cycle, 48 V, IDQ = 80 mA, class AB P3dB Max Output Power Max Drain Efficiency Freq [MHz] Zs [W] ZL [W] Gain [dB] P3dB [dBm] P3dB [W] hD [%] ZL [W] Gain [dB] P3dB [dBm] P3dB [W] hD [%] 29 33 37 41 45 49 53 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance at various VDD IDQ(MAIN) = 160 mA, ƒ = 2690 MHz 44V Gain 48V Gain 52V Gain 44V Eff 48V Eff 52V Eff gtva261802fc_g6 -18 -16 -14 -12 -10 2550 2600 2650 2700 2750 Input Return Loss (dB) Gain (dB) Frequency (MHz) CW Performance Small Signal Gain & Input Return Loss VDD = 48 V, IDQ(MAIN) = 160 mA IRL Gain gtva261802fc_g7

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 02, 2018-09-25 5GTVA261802FC Reference Circuit, 2620 – 2690 MHz Reference circuit assembly diagram (not to scale) C211 C212 C206 C210 R201C202 C203 C204 C201 C205 C207 C208 C209 R101 C103 C101 C105 R103 C102 C106 C104 R102 GTVA261802FC_IN_01 RF_IN RF_OUT VDD gt v a26 180 2f c_C D_08 - 16 - 20 18 RO4350, 20 MIL GTVA261802FC_OUT_01 RO4350, 20 MIL C213 C214 VDD VGS(MAIN) VGS(PEAK)

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 02, 2018-09-25 6GTVA261802FC Reference Circuit (cont.) Reference Circuit Assembly DUT GTVA261802FC V1 Test Fixture Part No. LTN/GTVA261802FC V1 PCB Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66, ƒ = 2620 – 2690 MHz Find Gerber files for this test fixture on the Wolfspeed Web site at www.wolfspeed.com/RF Pinout Diagram (top view) S D1 D2 G1 G2 Pin Description D1 Drain Device 1 (Main) D2 Drain Device 2 (Peak) G1 Gate Device 1(Main) G2 Gate Device 2 (Peak) S Source (flange) Main Peak Components Information Component Description Manufacturer P/N Input C101, C102, C103, C104 Capacitor, 12 pF ATC ATC600F120JT250X C105, C106 Capacitor, 100V, 4.7 µF TDK Corporation C4532X7S2A475M230KB R101, R102 Resistor, 10 ohms Panasonic Electronic Components ERJ-8GEYJ100V R103 Resistor, 50 ohms Richardson C16A50Z4 U1 Hybrid coupler Anaren X3C26P1-03S Output C201, C202 Capacitor, 0.5 pF ATC ATC600F0R5JT250X C203, C204, C205, C206 Capacitor, 12 pF ATC ATC600F120JT250X C207, C208, C209, C210, C211, C212 Capacitor, 100 V, 4.7 µF TDK Corporation C4532X7S2A475M230KB C213, C214 Capacitor, 470 µF Cornell Dubilier Electronics (CDE) SEK471M050ST R201 Resistor, 50 ohms Richardson C16A50Z4 U2 Hybrid coupler Anaren X3C26P1-03S

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 02, 2018-09-25 7GTVA261802FC Package Outline Specifications Package H-37248C-4 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994 2. Primary dimensions are mm, alternate dimensions are inches 3. All tolerances ± 0.127 [0.005] 4. Pins: D1, D2 – drain, G1, G2 – gate, S – source (flange) 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch] 12.70 [.500] 19.81±0.20 [.780±0.008] 3.81 [.150] 9.78 [.385] 4.83±0.51 [.190±0.020] 3.78±0.25 [.149±0.010] SPH 1.57 [.062] 1.02 [.040] 20.57 [.810] (8.89 [.350]) (5.08 [.200]) (19.43 [.765]) D1 D2 G1 G2 S C66065-A0004-C446-01-0027 : h-37248c-4_PO_11-02-2016 R0.51 +0.38 –0.13 R.020+.015 –.005 CL LC CL 45° X 2.72 [.107]

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2017-07-21 Advance All Data Sheet reflects advance specification for product development 02 2018-09-25 Production All Data Sheet reflects released product specification GTVA261802FC www.wolfspeed.comRev. 02, 2018-09-25 Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat- ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact:

4600 Silicon Drive

Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816