GTVA261701FA CREE | Alldatasheet

Document overview

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Technical content

Features

  • GaN on SiC HEMT technology
  • Input Matched
  • Typical CW performance, 2690 MHz, 48 V, single side - Output power at P 3dB = 170 W - Efficiency = 75% - Gain = 15 dB
  • Human Body Model, Class 1B (per ANSI/ESDA/ JEDEC JS-001)
  • Capable of handling 10:1 VSWR @48 V, 40 W (CW) output power
  • RoHS-compliant

Description

The GTVA261701FA is a 170-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. RF Characteristics Single-carrier WCDMA Specifications (tested in Wolfspeed test fixture) VDD = 48 V, IDQ = 200 mA, POUT = 40 W avg, ƒ = 2690 MHz. 3GPP WDMA signal, 3.84 MHz channel bandwidth, 10 dB peak/ average @ 0.01% CCDF . Characteristic Symbol Min Typ Max Unit Gain Gps 16 17 — dB Drain Efficiency hD 38 43 — % Adjacent Channel Power Ratio ACPR — –29 –25 dBc -80 -60 -40 -20 27 31 35 39 43 47 51 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 200 mA, ƒ = 2620 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth Gain Efficiency PAR @ 0.01% CCDF g261701fa-gr1a GTVA261701FA

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 05, 2018-05-08 2GTVA261701FA DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage VGS = –8 V, ID = 21 mA V(BR)DSS 150 — — V Drain-source Leakage Current VGS = –8 V, VDS = 50 V IDSS — — 5 mA Gate Threshold Voltage VDS = 10 V, ID = 21 mA VGS(th) –3.8 –3.0 –2.3 V Recommended Operating Conditions Parameter Conditions Symbol Min Typ Max Unit Drain Operating Voltage VDD 0 — 50 V Gate Quiescent Voltage VDS = 50 V, ID = 1.0 A VGS(Q) — –2.8 — V Absolute Maximum Ratings Parameter Symbol Value Unit Drain-source Voltage VDSS 125 V Gate-source Voltage VGS –10 to +2 V Gate Current IG 20 mA Drain Current ID 7.5 A Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated within the operating voltage range (V DD) specified above. Thermal Characteristics Characteristic Symbol Value Unit Thermal Resistance CASE = 70 °C, 50 W (CW), VDD = 48 V, 2620 MHz) RqJC 1.07 °C/W

Ordering Information

Type and Version Order Code Package Shipping GTVA261701FA V1 RO GTVA261701FA-V1-R0 H-37265J-2, earless flange Tape & Reel, 50 pcs GTVA261701FA V1 R2 GTVA261701FA-V1-R2 H-37265J-2, earless flange Tape & Reel, 250 pcs

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 05, 2018-05-08 3GTVA261701FA -80 -60 -40 -20 27 31 35 39 43 47 51 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 200 mA, ƒ = 2690 MHz 3GPP WCDMA signal, 10 dB APR, 3.84 MHz bandwidth Gain Efficiency PAR @ 0.01% CCDF g261701fa-gr1c -65 -55 -45 -35 -25 -15 27 31 35 39 43 47 51 Drain Efficiency(%) ACP Up & Low (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 200 mA, ƒ = 2620 MHz, 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth ACP Low Efficiency ACP Up g261701fa-gr2a -65 -55 -45 -35 -25 -15 27 31 35 39 43 47 51 Drain Efficiency(%) ACP Up & Low (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 200 mA, ƒ = 2655 MHz, 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth Efficiency ACP Low ACP Up g261701fa-gr2b -80 -60 -40 -20 27 31 35 39 43 47 51 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 200 mA, ƒ = 2655 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth PAR @ 0.01% CCDF Gain Efficiency g261701fa-gr1b Typical Performance (data taken in an Wolfspeed production test fixture)

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 05, 2018-05-08 4GTVA261701FA -65 -55 -45 -35 -25 -15 27 31 35 39 43 47 51 Drain Efficiency(%) ACP Up & Low (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 200 mA, ƒ = 2690 MHz, 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth ACP Low Efficiency ACP Up g261701fa-gr2c 2550 2600 2650 2700 2750 Drain Efficiency (%) Gain (dB) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 48 V, IDQ = 200 mA, POUT = 46.0dBm, 3GPP WCDMA signal, 10.0 dB PAR Gain Efficiency g261701fa-gr3 -35 -30 -25 -20 -15 -10 -35 -30 -25 -20 -15 -10 2550 2600 2650 2700 2750 Return Loss (dB) ACP Up (dBc) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 48 V, IDQ = 200 mA, POUT = 46 dBm, 3GPP WCDMA signal, 10.0 dB PAR ACP Up Return Loss g261701fa-gr4 0 27 31 35 39 43 47 51 55 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 48 V, IDQ = 200 mA Gain Efficiency g261701fa-gr5 Typical Performance (cont.)

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 05, 2018-05-08 5GTVA261701FA 27 31 35 39 43 47 51 55 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at specified VDD IDQ = 200 mA, ƒ = 2620 MHz Gain Efficiency 44 V 48 V 52 V g261701fa-gr6a 0 27 31 35 39 43 47 51 55 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at specified VDD IDQ = 200 mA, ƒ = 2655 MHz Gain Efficiency 44 V 48 V 52 V g261701fa-gr6b 27 31 35 39 43 47 51 55 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at specified VDD IDQ = 200 mA, ƒ = 2690 MHz Gain Efficiency 44 V 48 V 52 V g261701fa-gr6c -40 -36 -32 -28 -24 -20 -16 -12 2450 2550 2650 2750 2850 Input Return Loss (dB) Power Gain (dB) Frequency (MHz) Small Signal CW Perforrmance VDD = 48 V, IDQ = 200 mA Gain Input Return Loss g261701fa-gr7 Typical Performance (cont.)

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 05, 2018-05-08 6GTVA261701FA See next page for reference circuit infomation Single side, pulsed CW signal: 10 µsec, 10% duty cycle; 48 V, 200 mA P3dB Class AB Max Output Power Max Efficiency Freq [MHz] Zsource [W] Zload [W] Gain [dB] POUT [dBm] POUT [W] Efficiency [%] Zload [W] Gain [dB] POUT [dBm] POUT [W] Efficiency [%] Load Pull Performance Z Source Z Load G S D

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 05, 2018-05-08 7GTVA261701FA Reference circuit assembly diagram (not to scale) Reference Circuit tuned for 2620 to 2690 MHz DUT GTVA261701FA V1 Test Fixture Part No. LTN/GTVA261701FA PCB Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, εr = 3.66 Find Gerber files for this test fixture on the Wolfspeed Web site at www.wolfspeed.com/RF g t v a 2 61 7 01 f a _ C D _ 0 5 - 1 7 - 2 01 8 C102 C101 C104 C205 C206 C207 C202 C213 C203 C204 C201 C210 C211C209 C212 GTVA261701FA OUT_02A GTVA261701FA_IN_02A RO4350, 20 MIL (61) RO4350, 20 MIL C208 RF_IN VDD VDD VGG C105 R101 C103 L101 RF_OUT

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 05, 2018-05-08 8GTVA261701FA Components Information Component Description Manufacturer P/N In C101, C103 Capacitor, 10 pF ATC ATC800A100JT250T C102 Capacitor, 1.3 pF ATC ATC800A1R3CT250T C104 Capacitor, 0.047 µF Johanson Dielectrics Inc. 101X43W474MV4E C105 Capacitor, 100 µF Panasonic Electronic Components EEE-FT1V101AP L101 Inductor, 100 nH ATC ATC0603WL101JT R101 Resistor, 10 ohms Panasonic Electronic Components ERJ-8GEYJ100V Out C201, C212, C213 Capacitor, 10 pF ATC ATC800A100JT250T C202, C203 Capacitor, 1.9 pF ATC ATC800A1R9CT250T C204 Capacitor, 1 pF ATC ATC800A1R0CT250T C205, C209 Capacitor, 10000 pF Johanson Dielectrics Inc. 101X18W103MV4E C206, C207, C210, C211 Capacitor, 0.047 µF Johanson Dielectrics Inc. 101X43W474MV4E C208 Capacitor, 220 µF Panasonic Electronic Components ECA-2AHG221 Reference Circuit (cont.) See next page for package mechanical specifications

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 05, 2018-05-08 9GTVA261701FA Package Outline Specifications Package H-37265J-2 CL LC D G 2X 6.35 [.250] LID 10.16±.25 [.400±.010] FLANGE 10.16 [.400] 45° X .64 [.025] 2X 2.59±.51 [.102±.020] 10.16±.25 [.400±.010] SPH 1.57 [.062] FLANGE 4X R0.63 [R.025] MAX 1.02 [.040] S (15.34 [.604]) 3.61±.38 [.142±.015] 10.16 [.400] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D – drain; G – gate; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].

www.wolfspeed.comRev. 05, 2018-05-08 10GTVA261701FA Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat- ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact:

4600 Silicon Drive

Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816

Revision History

Revision Date Data Sheet Page Subjects (major changes since last revision) 01 2015-05-29 Advance All Data Sheet reflects advance specification for product development 02 2015-06-29 Preliminary All Data Sheet reflects preliminary specification 03 2016-03-28 Production 3 to 8 Information for production-released product, including firm specifications, performance curves, load pull table, and reference circuit information. 04 2017-04-06 Production 1 Remove "Integrated ESD protection" from Features Restructure tables for clarity. 05 2018-05-08 Production All Converted to Wolfspeed Data Sheet