GTVA221701FA_15 INFINEON | Alldatasheet

Document overview

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Technical content

Features

  • Input matched
  • Typical Pulsed CW performance, 1805 MHz, 48 V, single side - Output power at P 3dB = 200 W - Efficiency = 70% - Gain = 18 dB
  • Capable of handling 10:1 VSWR @48 V, 140 W (CW) output power
  • GaN HEMT technology
  • High power density
  • High efficiency
  • RoHS-compliant

Description

The GTVA221701FA is a 170-watt (P3dB) GaN high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Target RF Characteristics Single- carrier WCDMA Specifications (tested in Infineon test fixture) VDD = 48 V, IDQ = 300 mA, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 9.9 dB @ 0.01% CCDF Characteristics Conditions Symbol Min Typ Max Unit Linear Gain ƒ1 = 1805 MHz, POUT = 50 W avg Gps — 19 — dB Drain Efficiency hD — 38 — % Adjacent Channel Power Ratio ACPR — –32 — dBc Linear Gain ƒ2 = 2170 MHz, POUT = 50 W avg Gps — 19 — dB Drain Efficiency hD — 36 — % Adjacent Channel Power Ratio ACPR — –28 — dBc

Advance Specification 2 of 4 Rev. 01, 2015-07-27 advance specifica tion DC Characteristics (measured on wafer prior to packaging) Characteristic Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage VGS = –8 V, ID = 20 mA V(BR)DSS 150 — — V Gate Threshold Voltage VDS = 10 V, ID = 20 mA VGS(th) –3.8 –3.0 –2.3 V Gate Quiescent Voltage VDS = 50V, ID = 1.0 A VGS(Q) — –2.8 — V Saturated Drain Current VDS = 6.0 V, VGS = 2.0 V IDS 15 18 — A Maximum Ratings Parameter Symbol Value Unit Drain-source Voltage VDSS 125 V Gate-source Voltage VGS –10 to +2 V Operating Voltage VDD 0 to +50 V Gate Current IG 20 mA Drain Current Id 7.5 A Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance RqJC TBD °C/W

Ordering Information

Type and Version Order Code Package Description Shipping GTVA221701FA V1 R0 TBD H-37265J-2, earless flange Tape & Reel, 50 pcs GTVA221701FA V1 R2 TBD H-37265J-2, earless flange Tape & Reel, 250 pcs

Advance Specification 3 of 4 Rev. 01, 2015-07-27 GTVA221701FA advance specification Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Package Outline Specifications Package H-37265J-2 CL LC D G 2X 6.35 [.250] LID 10.16±.25 [.400±.010] FLANGE 10.16 [.400] 45° X .64 [.025] 2X 2.59±.51 [.102±.020] 10.16±.25 [.400±.010] SPH 1.57 [.062] FLANGE 4X R0.63 [R.025] MAX 1.02 [.040] S (15.34 [.604]) 3.61±.38 [.142±.015] 10.16 [.400] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D – drain; G – gate; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].

85579 Neubiberg, Germany

© 2015 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In- fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Advance Specification 4 of 4 Rev. 01, 2015-07-27 GTVA221701FA V1

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2015-07-27 Advance All Data Sheet reflects advance specification for product development