GTVA220701FA

GTVA220701FA CREE | Alldatasheet

Document overview

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• PDF pages: 10

Technical content

Features

• GaN on SiC HEMT technology
• Input matched
• Typical CW performance, 1880 MHz, 48 V - Output power at P 3dB = 45 W - Efficiency = 60.7% - Gain = 21.6 dB
• Human Body Model, Class 1A (per ANSI/ESDA/ JEDEC JS-001)
• Capable of handling 10:1 VSWR @48 V, 40 W (CW) output power
• RoHS-compliant

Description

The GTVA220701FA is a 70-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. RF Characteristics Single-carrier LTE Specifications (tested in Wolfspeed test fixture) VDD = 48 V, IDQ = 200 mA, POUT = 6.3 W avg, ƒ = 2170 MHz, 3GPP signal, 3.84 channel bandwidth, peak/average = 10.6 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Linear Gain Gps 20.75 22 — dB Drain Efficiency hD 24.5 27 — % Adjacent Channel Power Ratio ACPR — –36.5 –33 dBc -80 -60 -40 -20 27 31 35 39 43 47 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 200 mA, ƒ = 1805 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth Gain Efficiency PAR @ 0.01% CCDF g220701fa-gr1a GTVA220701FA

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-05-17 2GTVA220701FA DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage VGS = –8 V, ID = 7.2 mA V(BR)DSS 150 — — V Drain-source Leakage Current VGS = 8 V, VDS = 10 V IDSS — — 5 mA Gate Threshold Voltage VDS = 10 V, ID = 7.2 mA VGS(th) –3.8 –3.0 –2.3 V Recommended Operating Conditions Parameter Conditions Symbol Min Typ Max Unit Drain Operating Voltage VDD 0 — 50 V Gate Quiescent Voltage VDS = 48 V, ID = 0.2 A VGS(Q) — –2.8 — V Absolute Maximum Ratings Parameter Symbol Value Unit Drain-source Voltage VDSS 125 V Gate-source Voltage VGS –10 to +2 V Gate Current IG 20 mA Drain Current ID 13.5 A Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated within the operating voltage range (V DD) specified above. Thermal Characteristics Characteristic Symbol Value Unit Thermal Resistance CASE = 70 °C, 55 W (CW), VDD = 48 V, 2170 MHz) RqJC 2.36 °C/W

Ordering Information

Type and Version Order Code Package Shipping GTVA220701FA V1 R0 GTVA220701FA-V1-R0 H-37265J-2, earless flange Tape & Reel, 50 pcs GTVA220701FA V1 R2 GTVA220701FA-V1-R2 H-37265J-2, earless flange Tape & Reel, 250 pcs

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-05-17 3GTVA220701FA -80 -60 -40 -20 27 31 35 39 43 47 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 200 mA, ƒ = 1880 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth Gain Efficiency PAR @ 0.01% CCDF g220701fa-gr1b -65 -55 -45 -35 -25 -15 27 31 35 39 43 47 Drain Efficiency (%) ACP Up & Low (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 200 mA, ƒ = 1805 MHz, 3GPP WCDMA signal, 10 dB PAR,

3.84 MHz bandwidth

-65 -55 -45 -35 -25 -15 27 31 35 39 43 47 Drain Efficiency (%) ACP Up & Low (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 200 mA, ƒ = 1880 MHz, 3GPP WCDMA signal, 10 dB PAR, -80 -60 -40 -20 27 31 35 39 43 47 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 200 mA, ƒ = 2170 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth Gain Efficiency PAR @ 0.01% CCDF g220701fa-gr1c Typical Performance (data taken in an Wolfspeed production test fixture)

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-05-17 4GTVA220701FA -65 -55 -45 -35 -25 -15 27 31 35 39 43 47 Drain Efficiency (%) ACP Up & Low (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 200 mA, ƒ = 2170 MHz, 3GPP WCDMA signal, 10 dB PAR, 1700 1800 1900 2000 2100 2200 2300 Drain Efficiency (%) Gain (dB) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 48 V, IDQ = 200 mA, POUT = 38.0 dBm, 3GPP WCDMA signal, 10 dB PAR Gain Efficiency g220701fa-gr3 -30 -25 -20 -15 -10 -45 -40 -35 -30 -25 -20 -15 1700 1800 1900 2000 2100 2200 2300 Return Loss (dB) ACP Up (dBc) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 48 V, IDQ = 200 mA, POUT = 38.0 dBm, 3GPP WCDMA signal, 10 dB PAR ACP Up Return Loss g220701fa-gr4 27 31 35 39 43 47 51 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance (series show frequency) VDD = 48 V, IDQ = 200 mA Gain Efficiency

1805 MHz

1880 MHz

2170 MHz

Typical Performance (cont.)

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-05-17 5GTVA220701FA 27 31 35 39 43 47 51 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected supply voltage IDQ = 200 mA, ƒ = 1805 MHz Gain Efficiency 44 V 48 V 52 V g220701fa-gr6a 0 27 31 35 39 43 47 51 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected supply voltage IDQ = 200 mA, ƒ = 1880 MHz Gain Efficiency 44 V 48 V 52 V g220701fa-gr6b 27 31 35 39 43 47 51 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected supply voltage IDQ = 200 mA, ƒ = 2170 MHz Gain Efficiency 44 V 48 V 52 V g220701fa-gr6c -28 -24 -20 -16 -12 1675 1875 2075 2275 Input Return Loss (dB) Power Gain (dB) Frequency (MHz) Small Signal CW Gain & Input Return Loss VDD = 48 V, IDQ = 200 mA Gain Input Return Loss g220701fa-gr7 Typical Performance (cont.)

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-05-17 6GTVA220701FA Reference Circuit, tuned for 1805 MHz to 2170 MHz DUT GTVA220701FA V1 Test Fixture Part No. LTN/GTVA220701FA V1 PCB Rogers 4350, 0.762 mm [.030”] thick, 2 oz. copper, εr = 3.66 Find Gerber files for this test fixture on the Wolfspeed Web site at www.wolfspeed.com/RF Z Source Z Load G S D Broadband Circuit Impedance (combined leads) Freq [MHz] Z Source W Z Load W R jX R jX 1805 1.95 –5.67 12.02 5.87 1840 2.01 –6.27 11.94 3.94 1880 2.43 –7.17 11.33 3.15 2100 9.95 –9.38 10.39 0.02 2140 11.40 –8.40 10.31 –0.75 2170 11.61 –9.07 10.50 –2.23

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-05-17 7GTVA220701FA Reference circuit assembly diagram (not to scale) Reference Circuit (cont.) RO4350, 30 MIL (62) GTVA220701FA_OUT_02 C205 C202 C203 C208 C201 C207 GTVA220701FA_IN_02 RO4350, 30 MIL (60) R101 C105 C101 R102 C102 C103 C104 C206 C204 RF_IN RF_OUT VDD VGG gt va 22 07 01 f a_C D_ 02 _ 05 - 17 - 20 18

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-05-17 8GTVA220701FA Components Information Component Description Manufacturer P/N In C101 Capacitor, 2.4 pF ATC ATC600F2R4JT250XT C102, C103 Capacitor, 20 pF ATC ATC600F200JT250XT C104 Capacitor, 1 pF ATC ATC600F1R0JT250XT C105 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T R101 Resistor, 10 ohms Panasonic Electronic Components ERJ-8GEYJ100V R102 Resistor, 330 ohms Panasonic Electronic Components ERJ-3GEYJ331V Out C201 Capacitor, 47 µF Cornell Dubilier Electronics (CDE) SEK470M100ST C202, C208 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C203 Capacitor, 1 pF ATC ATC600F1R0JT250XT C204, C205 Capacitor, 20 pF ATC ATC600F200JT250XT C206 Capacitor, 0.7 pF ATC ATC600F0R7JT250XT C207 Capacitor, 0.3 pF ATC ATC600F0R3JT250XT Reference Circuit (cont.) Package Outline Specifications, next page

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-05-17 9GTVA220701FA Package Outline Specifications Package H-37265J-2 CL LC D G 2X 6.35 [.250] LID 10.16±.25 [.400±.010] FLANGE 10.16 [.400] 45° X .64 [.025] 2X 2.59±.51 [.102±.020] 10.16±.25 [.400±.010] SPH 1.57 [.062] FLANGE 4X R0.63 [R.025] MAX 1.02 [.040] S (15.34 [.604]) 3.61±.38 [.142±.015] 10.16 [.400] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D – drain; G – gate; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. CL LC D G 2X 6.35 [.250] LID 10.16±.25 [.400±.010] FLANGE 10.16 [.400] 45° X .64 [.025] 2X 2.59±.51 [.102±.020] 10.16±.25 [.400±.010] SPH 1.57 [.062] FLANGE 4X R0.63 [R.025] MAX H-37265J- 2_02_po_05-29-2015_POD-bn 1.02 [.040] S (15.34 [.604]) 3.61±.38 [.142±.015] 10.16 [.400]

www.wolfspeed.comRev. 04, 2018-05-17 10GTVA220701FA Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat- ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact:

4600 Silicon Drive

Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816

Revision History

Revision Date Data Sheet Page Subjects (major changes at each revision) 01 2015-08-18 Advance all Data Sheet reflects advance specification for product development 02 2016-04-01 Production all Product released to production. Add firm specifications. performance information, and reference circuit information, 03 2017-04-06 Production 1 Remove "Integrated ESD protection" from Features Restructure tables for clarity. 04 2018-05-17 Production All Converted to Wolfspeed Data Sheet