GTVA212701FA-V2-R2

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Document overview

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• PDF pages: 8

Technical content

Features

• GaN on SiC HEMT technology
• Input matched
• Typical pulsed CW performance (class AB), 2180 MHz,

48 V, 10 µs pulse width, 10% duty cycle

• Output power P 3dB = 300 W - Drain efficiency = 68.5% - Gain = 17.5 dB
• Human Body Model Class 1B (per ANSI/ESDA/JEDEC JS-001)
• Capable of handling 10:1 VSWR @ 48 V, 56.2 W (WCD- MA) output power
• Low thermal resistance
• Pb-free and RoHS-compliant

Description

The GTVA212701FA is a 270-watt GaN on SiC high electron mobility transis- tor (HEMT) for use in the 2110 to 2200 MHz frequecy band. It features input matching, high efficiency, and a thermally-enhanced earless package. RF Characteristics Single-carrier WCDMA Specifications (tested in Wolfspeed test fixture) VDD = 48 V, IDQ = 320 mA, 56.2 W average output power, ƒ = 2180 MHz. 3GPP WCDMA signal: 3.84 MHz channel bandwidth, 10 dB PAR at 0.01% CCDF. Characteristic Symbol Min Typ Max Unit Gain Gps 18 19 — dB Drain Efficiency hD 35 38 — % Adjacent Channel Power Ratio ACPR — –29 –26 dBc Output PAR at 0.01% probablity on CCDF OPAR 6.4 7.0 — dB -60 -40 -20 25 30 35 40 45 50 55 Efficiency (%) Peak/Average Ratio (dB), Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 320 mA, ƒ = 2170 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth Gain Efficiency PAR @ 0.01% CCDF g212701fa-gr1 GTVA212701FA

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04.1, 2019-01-28 2GTVA212701FA DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage VGS = –8 V, ID = 10 mA V(BR)DSS 150 — — V Drain-source Leakage Current VGS = –8 V, VDS = 10 V IDSS — — 4.5 mA Gate Threshold Voltage VDS = 10 V, ID = 32 mA VDSX(th) –3.8 3.0 –2.3 V Recommended Operating Conditions Parameter Conditions Symbol Min Typ Max Unit Drain Operating Voltage VDD 0 — 50 V Gate Quiescent Voltage VDS = 48 V, ID = 320 mA VGS(Q) –3.4 –3.0 –2.5 V Absolute Maximum Ratings Parameter Symbol Value Unit Drain-source Voltage VDSS 125 V Operating Voltage VDD 55 V Gate-source Voltage VGS –10 to +2 V Gate Current IG 32 mA Drain Current ID 12 A Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated within the operating voltage range (V DD) specified above. Thermal Characteristics TCASE = 70°c, 56.2 W (CW), 48 V, IDQ = 320 mA, 2170 MHz Characteristic Symbol Value Unit Thermal Resistance RqJC 1.1 °C/W

Ordering Information

Type and Version Order Code Package and Description Shipping GTVA212701FA V2 R0 GTVA212701FA-V2-R0 H-87265J-2, single-ended, earless flange Tape & Reel, 50 pcs GTVA212701FA V2 R2 GTVA212701FA-V2-R2 H-87265J-2, single-ended, earless flange Tape & Reel, 250 pcs

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04.1, 2019-01-28 3GTVA212701FA -70 -60 -50 -40 -30 -20 -10 25 30 35 40 45 50 55 Efficiency (%) ACP Up. ACP Low (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 320 mA, ƒ = 2170 MHz 3GPP WCDMA signal, 10 dB PAR,

3.84 MHz bandwidth

Efficiency (%) Gain (dB) Frequency (MHz) Single-carrier WCDMA Broadband VDD = 48 V, IDQ = 320 mA, POUT = 47.5 dBm 3GPP WCDMA signal, 10 dB PAR Gain Efficiency g212701fa-gr3 -35 -30 -25 -20 -15 -10 -40 -35 -30 -25 -20 -15 -10 1950 2050 2150 2250 2350 Return Loss (dB) ACPL & ACP Up (dBc) Frequency (MHz) Single-carrier WCDMA Broadband VDD = 48 V, IDQ = 320 mA, POUT = 47.5 dBm 3GPP WCDMA signal, 10 dB PAR ACPU ACPL IRL g212701fa-gr4 0 29 33 37 41 45 49 53 57 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance Across Frequency VDD = 48 V, IDQ = 320 mA

2170 MHz

2110 MHz

2140 MHz

Typical Performance (data taken in Wolfspeed production test fixture)

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04.1, 2019-01-28 4GTVA212701FA 29 33 37 41 45 49 53 57 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance at various VDD IDQ = 320 mA, ƒ = 2170 MHz

44 V Gain

48 V Gain

52 V Gain

44 V Eff

48 V Eff

52 V Eff

-35 -30 -25 -20 -15 -10 1950 2050 2150 2250 2350 Input Return Loss (dB) Gain (dB) Frequency (MHz) CW Small Signal Performance VDD = 48 V, IDQ = 320 mA Gain Input Return Loss g212701fa-gr7 Typical Performance (cont.) Load Pull Pulsed CW signal: 10 µsec, 10% duty cycle; VDD = 48 V, IDQ = 300 mA P3dB Class AB Max Output Power Max Drain Efficiency Freq [MHz] Zs [W] Zl [W] Gain [dB] P3dB [dBm] P3dB [W] hD [%] Zl [W] Gain [dB] P3dB [dBm] P3dB [W] hD [%]

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04.1, 2019-01-28 5GTVA212701FA Reference Circuit tuned for 2110 to 2200 MHz DUT GTVA212701FA V2 Reference Circuit Part No. L TN/GTVA212701FA-V2 PCB Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, εr = 3.66 Find Gerber files for this reference circuit on the Wolfspeed Web site at http://www.wolfspeed.com/RF RF_IN RF_OUT g t v a 2 1 2 7 0 1 f a _ C D _ 0 3 - 2 3 - 1 7 - b n GTVA212701FA_OUT_03GTVA212701FA_IN_03 RO4350, 20 MIL (291) RO4350, 20 MIL (291) C109C104 C102 C108 R103 C107 C103 R101 C106 C105 C110 R102 C101 C206 C204 C201 C205 C207 C208 C209 C202 C203 VDD VGG Reference circuit assembly diagram (not to scale)

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04.1, 2019-01-28 6GTVA212701FA Pin Description D Drain G Gate S Source (flange) S G D H-37265J- 2_03_pd_20 16- 12-01-bn Pinout Diagram (top view) Reference Circuit (cont.) Components Information Component Description Manufacturer P/N Input C101 Capacitor, 2 pF ATC ATC800A2R0BT250XT C102, C104, C105, C106 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C103 Capacitor, 0.2 pF ATC ATC800A0R2BT250XT C107 Capacitor, 15 pF ATC ATC800A150GT250XT C108 Capacitor, 12 pF ATC ATC800A120JT250XT C109, C110 Capacitor, 24 pF ATC ATC800A240JT250XT R101, R102 Resistor, 10 ohms Panasonic Electronic Components ERJ-8GEY J100V R103 Resistor, 10 ohms Yageo RC0805JR-0710RL Output C201, C204 Capacitor, 24 pF ATC ATC800A240JT250XT C202, C203 Capacitor, 220 µF Panasonic Electronic Components ECA-2AHG221 C205, C207, C208, C209 Capacitor, 10 µF TDK Corporation C5750X7S2A106M230KB C206 Capacitor, 0.6 pF ATC ATC800A0R6BT250XT

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04.1, 2019-01-28 7GTVA212701FA CL LC D G 6.35 [.250] LID 10.16±.25 [.400±.010] 45° X .64 [.025] 2.59±.51 [.102±.020] 10.16±.25 [.400±.010] SPH 1.57 [.062] 1.02 [.040] S (15.34 [.604]) 3.63±.38 [.143±.015] H-87265J-2_po-03_03-03-2017-bnFLANGE R0.63 [R.025] MAX FLANGE 10.16 ± 0.191 [.400 ± .0075] 10.16 ± 0.191 [.400 ± .0075] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994 2. Primary dimensions are mm; alternate dimensions are inches 3. All tolerances ± 0.127 [.005] 4. Pins: D – drain; G – gate; S – source 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994 2. Primary dimensions are mm; alternate dimensions are inches 3. All tolerances ± 0.127 [0.005] 4. Pins: D – drain, G – gate, S – source (flange) 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch] Package Outline Specifications Package H-87265J-2

www.wolfspeed.comRev. 04.1, 2019-01-28 Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat- ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. For more information, please contact:

4600 Silicon Drive

Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816 GTVA212701FA

Revision History

01 2017-01-24 Advance All Proposed specification for new product development 02 2017-07-07 Production All Data Sheet now represents production-released product specifications, includ- ing reference circuit and performance information 03 2018-03-28 Production 1 7, 8 Change frequency of testing from 2170 MHz to 2180 MHz. Typo in table heading Typos: Package Outline diagram notes, email information. 04 2018-07-05 Production All Revised to V2. Converted to Wolfspeed data sheet. 04.1 2019-01-28 Production 2 Added gate quiescent voltage and operating voltage