GTVA126001FC

GTVA126001EC CREE | Alldatasheet

Document overview

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Technical content

Features

• GaN on SiC HEMT technology
• Input matched
• Typical pulsed CW performance (class AB), 1200 MHz, 50 V, 300 µs pulse width, 10% duty cycle - Output power P 3dB = 600 W - Drain efficiency = 65% - Gain = 18 dB
• Capable of withstanding a 10:1 load mismatch (all phase angles) at 600 W peak power under pulsed conditions: 300 µs pulse width, 10% duty cycle, V DD = 50 V, IDQ = 100 mA
• Pb-free and RoHS compliant

Description

The GTVA126001EC and GTVA126001FC are 600-watt GaN on SiC high electron mobility transistors (HEMT) for use in the 1200 to 1400 MHz frequecy band. They feature input matching, high efficiency, and thermally-enhanced packages. GTVA126001FC Package H-37248-2 0 100 200 300 400 500 600 700 800 Efficiency (%) Gain (dB) Output Power (W) Power Sweep: Gain & Efficiency

50 V, IDQ = 100 mA,

300 µs pulse width, 10% duty cycle

1200 MHz

1300 MHz

1400 MHz

Pulsed RF Performance (tested in Wolfspeed test fixture) VDD = 50 V, IDQ = 100 mA, POUT = 600 W, ƒ1 = 1200 MHz, ƒ2 = 1400 MHz, 300 µs pulse width, 10% duty cycle Characteristic Symbol Min Typ Max Unit Gain Gps 19 20 22 dB Drain Efficiency hD 56 63 — % Preliminary GTVA126001EC/FC

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-05-01 2Preliminary GTVA126001EC/FC DC Characteristics (measured on wafer prior to packaging) Characteristic Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage VGS = –8 V, ID = TBD mA V(BR)DSS 150 — — V Drain-source Leakage Current VGS = –8 V, VDS = 50 V IDSS — — TBD mA Gate Threshold Voltage VDS = 10 V, ID = 100 mA VGS(th) –5 –3.2 –2.6 V Gate Quiescent Voltage VDS = 50 V, ID = TBD mA VGS(Q) — TBD — V Recommended Operating Conditions Parameter Conditions Symbol Min Typ Max Unit Drain Operating Voltage VDD 0 — 55 V Gate Quiescent Voltage VDS = 50 V, ID = 100 mA VGS(Q) — –2.8 — V Absolute Maximum Ratings Parameter Symbol Value Unit Drain-source Voltage VDSS 125 V Gate-source Voltage VGS –10 to +2 V Operating Voltage VDD 0 to +50 V Gate Current IG TBD mA Drain Current ID TBD A Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated within the operating voltage range (V DD) specified above. Thermal Characteristics TCASE = 70 °C, 676 W (peak), 50 V, IDQ = 100 mA, 1200 MHz, 2 ms pulse width, 10% duty cycle Characteristic Symbol Value Unit Thermal Resistance RqJC 0.16 °C/W

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-05-01 3Preliminary GTVA126001EC/FC 0.1 0.2 0.3 0.4 0.5 1100 1200 1300 1400 1500 Input Return Loss (dB) Droop (dB) Frequency (MHz) Pulse Droop and IRL VDS = 50 V, IDQ = 100 mA, POUT @ P3db 300 µs pulse width, 10% duty cycle Droop IRL g126001efc-gr2 Typical Performance

Ordering Information

Type and Version Order Code Package and Description Shipping GTVA126001EC V1 R0 TBD H-36248-2, single-ended, bolt-down flange Tape & Reel, 50 pcs GTVA126001EC V1 R2 TBD H-36248-2, single-ended, bolt-down flange Tape & Reel, 250 pcs GTVA126001FC V1 R0 TBD H-37248-2, single-ended, earless flange Tape & Reel, 50 pcs GTVA126001FC V1 R2 TBD H-37248-2, single-ended, earless f flange Tape & Reel, 250 pcs 670 690 710 730 750 770 790 810 1150 1250 1350 1450 Output Power (W) Gain (dB), Efficiency (%) Frequency (MHz) Frequency Sweep VDS = 50 V, IDQ = 100 mA, POUT @ P3dB 300 µs pulse width, 10% duty cycle Gain Efficiency Output Power g126001efc-gr3

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-05-01 4Preliminary GTVA126001EC/FC Typical Performance (cont.) 0 100 200 300 400 500 600 700 800 Efficiency (%) Gain (dB) Output Power (W) Power Sweep

50 V, IDQ = 100 mA, ƒ = 1200 MHz

300 µs, 10% 1 ms, 10% 2 ms, 10% 2 ms, 20% g126001efc-gr4 0 100 200 300 400 500 600 700 800 Efficiency (%) Gain (dB) Output Power (W) Power Sweep: Gain & Efficiency 300 µs pulse width, 10% duty cycle See next page for reference circuit information

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-05-01 5Preliminary GTVA126001EC/FC Reference circuit assembly diagram (not to scale) Reference Circuit tuned for 1200 to 1400 MHz DUT GTVA126001EC/FC V1 Test Fixture Part No. LTN/GTVA126001EC V1, LTN/GTVA126001FC V1LTN/GTVA126001EC/FC PCB Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, εr = 3.66 Find Gerber files for this test fixture on the Wolfspeed Web site at www.wolfspeed.com/RF Components Information Component Description Manufacturer P/N Input C101, C102 Capacitor, 1.2 pF ATC ATC800A1R2CT250T C103, C104 Capacitor, 56 pF ATC ATC800A560JT250T C105 Capacitor, 39 pF ATC ATC100B390JW500XB C106 Capacitor, 1 µF TDK Corporation C4532X7R2A105M230KA R101 Resistor, 10 ohms Panasonic Electronic Components ERJ-3GEYJ100V R102 Resistor, 100 ohms Panasonic Electronic Components ERJ-3GEYJ101V R103 Resistor, 5.6 ohms Panasonic Electronic Components ERJ-8RQJ5R6V R104 Resistor, 30 ohms Panasonic Electronic Components ERJ-8GEYJ300V table contineued next page RF_IN C213 C205 C211 C212 C215 C210 R102 R101 C106 C105 R103 C204 C201 C202 C203 C209C207 C208 C214 C206 VGG RO4350, 20 MIL (62) VDD RO4350, 20 MIL (62) C101 C102 C103 R104 C104 GTVA126001EFC_OUT_08AGTVA126001EFC_IN_08B g t va1 26 00 1e f c_ C D_ 0 5- 0 4- 2 01 8 RF_OUT VDDC217 C216

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-05-01 6Preliminary GTVA126001EC/FC Pinout Diagram (top view) D G S h-36248-2_2016-09-26 Source (flange) Pin Description D Drain G Gate S Source (flange) Source (flange) D G h-37248-2_2016-09-23 Pin Description D Drain G Gate S Source (flange) GTVA126001EC Package H-36248-2 GTVA126001FC Package H-37248-2 Component Description Manufacturer P/N Output C201 Capacitor, 1.6 pF ATC ATC800A1R6CT250T C202 Capacitor, 3.6 pF ATC ATC100A3R6CW150XB C203 Capacitor, 56 pF ATC ATC800A560JT250T C204, C205 Capacitor, 39 pF ATC ATC100B390JW500XB C206, C207, C208, C209, C210, C211, C212, C213 Capacitor, 10 µF , 100 V TDK Corporation C5750X7S2A106M230KB C214, C215 Capacitor, 22 µF Cornell Dubilier Electronics (CDE) SEK220M100ST C216, C217 Capacitor, 220 µF Panasonic Electronic Components ECA-2AHG221 Reference Circuit (cont.)

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-05-01 7Preliminary GTVA126001EC/FC Package Outline Specifications Package H-36248-2 19.431 ±0.510 [.765±0.020] CL 34.036 [1.340] 19.812±0.200 [.780±0.008] 1.016 [.040] 3.632±0.380 [.143±0.015] SPH 1.575 [0.062] 45° X 2.720 2X 12.700 [.500] 4.826±0.510 [.190±0.020] 27.940 [1.100] 4X R1.524 [R.060] 2X R1.626 [R.064] D G S FLANGE 9.779 [.385] CL [.370 ]+0.004 –0.006 LID 9.398 +0.100 –0.150 CL [45° X .107] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D – drain; G – gate; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994 2. Primary dimensions are mm; alternate dimensions are inches 3. All tolerances ± 0.127 [0.005] 4. Pins: D – drain, G – gate, S – source 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-05-01 8Preliminary GTVA126001EC/FC Package Outline Specifications Package H-37248-2 [.190±0.020] D G FLANGE 9.779 [.385] 2X 12.700 [.500] 4.826±0.510 LID 9.398 +0.100 -0.150 [.370 +0.004 [.765±0.020] 45° X 2.720 [45° X .107] CL CL 4X R0.508 +.381 -.127 [ R.020 +0.015 -0.005 ] S 1.016 [.040] SPH 1.575 [.062] 19.812±0.200 [.780±0.008] 20.574 [.810] 3.632±0.380 [.143±0.015] CL Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D – drain; G – gate; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994 2. Primary dimensions are mm; alternate dimensions are inches 3. All tolerances ± 0.127 [0.005] 4. Pins: D – drain, G – gate, S – source 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]

Revision History

Revision Date Data Sheet Page Subjects (major changes at each revision) www.wolfspeed.comRev. 04, 2018-05-01 9Preliminary GTVA126001EC/FC Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat- ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact:

4600 Silicon Drive

Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816 01 2016-09-27 Advance all Proposed specification for new product development 02 2017-07-10 Advance all Includes GTVA126001FC product, package H-37248-4 03 2017-11-17 Preliminary All Add preliminary performance information and circuit specifications 04 2018-05-01 Preliminary All Converted to Wolfspeed Data Sheet