GTVA104001FA CREE | Alldatasheet

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Technical content

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 02, 2018-05-08 All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Advance Specification Data Sheets describe products that are being considered by Wolfspeed for development and market intro- duction. The target performance shown in Advance Specifications is not final and should not be used for any design activity. Please contact Wolfspeed about the fu- ture availability of these products. GTVA104001FA Package H-37265J-2 Thermally-Enhanced High Power RF GaN on SiC HEMT

400 W, 50 V, 960 – 1215 MHzFeatures

  • GaN on SiC HEMT technology
  • Broadband internal input matching
  • Typical Pulsed CW performance, 960 - 1215 MHz, 50V, - Output power = 410 W - Drain Efficiency = 70 % - Gain = 19 dB - Pulse width = 128 µs - Duty cycle = 10 %
  • Pb-free and RoHS compliant

Description

The GTVA104001FA is a 400-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 960 to 1215 MHz frequecy band. It features input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange. Target RF Characteristics Typical RF Performance (tested in Wolfspeed test fixture) VDD = 50 V, IDQ = 50 mA, POUT = 400 W, ƒ = 960 – 1215 MHz, Pulse Width = 128 µs, 10% duty cycle Characteristic Symbol Min Typ Max Unit Linear Gain Gps — 19 — dB Drain Efficiency hD — 70 — % Advance GTVA104001FA

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 02, 2018-05-08 2Advance GTVA104001FA DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage VGS = –8 V, ID = 10 mA V(BR)DSS 150 — — V Gate Threshold Voltage VDS = 10 V, ID = 42 mA VGS(th) –6 –3 –2.2 V Recommended Operating Conditions Parameter Conditions Symbol Min Typ Max Unit Drain Operating Voltage VDD 0 — 50 V Gate Quiescent Voltage VDS = 50 V, ID = 100 mA VGS(Q) — –3.2 — V Absolute Maximum Ratings Parameter Symbol Value Unit Drain-source Voltage VDSS 125 V Gate-source Voltage VGS –10 to +2 V Gate Current IG 38 mA Drain Current ID 5 A Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated within the operating voltage range (V DD) specified above. Thermal Chracteristics Parameter Symbol Value Unit Thermal Resistance, Junction to Case (ƒ =1030 MHz, VDD = 50 V, RqJC 0.13 °C/W IGS = 100 mA, TF = 70 °C, POUT = 400 W, Pulse Width = 128 µs, 10% duty cycle)

Ordering Information

Type and Version Order Code Package Shipping GTVA104001FA V1 R0 TBD H-37265J-2, earless flange Tape & Reel, 50 pcs GTVA104001FA V1 R2 TBD H-37265J-2, earless flange Tape & Reel, 250 pcs

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 02, 2018-05-08 3Advance GTVA104001FA Pinout Diagram (top view) Lead connections for GTVA104001FA S G D H-37265J- 2_03_pd_20 16- 12-01-bn Pin Description D Drain Device G Gate Device S Source (flange) Package Outline Specifications Package H-37265J-2 CL LC D G 2X 6.35 [.250] LID 10.16±.25 [.400±.010] FLANGE 10.16 [.400] 45° X .64 [.025] 2X 2.59±.51 [.102±.020] 10.16±.25 [.400±.010] SPH 1.57 [.062] FLANGE 4X R0.63 [R.025] MAX 1.02 [.040] S (15.34 [.604]) 3.61±.38 [.142±.015] 10.16 [.400] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D – drain; G – gate; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].

www.wolfspeed.comRev. 02, 2018-05-08 4Advance GTVA104001FA Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat- ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact:

4600 Silicon Drive

Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2016-05-03 Advance All Data Sheet reflects advance specification for product development 02 2016-05-08 Advance All Converted to Wolfspeed Data Sheet, updated DC and thermal characteristics