GTRA384802FC CREE | Alldatasheet

Document overview

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Technical content

Features

  • GaN on SiC HEMT technology
  • Input and output matched
  • Asymmetrical Doherty design - Main: P3dB = 230 W Typ - Peak: P3dB = 360 W Typ
  • Typical Pulsed CW performance, 3800 MHz, 48 V, combined outputs, Doherty @ P 3dB, 10 µs, 10% duty cycle - Output power = 400 W - Drain efficiency = 62% - Gain = 12 dB
  • Pb-free and RoHS compliant

Description

The GTRA384802FC is a 400-watt (P3dB) GaN on SiC high electron mobil- ity transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally- enhanced package with earless flange. Target RF Characteristics Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty test fixture) VDD = 48 V, IDQ = 250 mA, POUT = 63 W avg, VGSPEAK = –6 V, ƒ = 3800 MHz, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps — 13.7 — dB Drain Efficiency hD — 44 — % Adjacent Channel Power Ratio ACPR — –31 — dBc Output PAR @ 0.01% CCDF OPAR — 7.5 — dB Advance GTRA384802FC

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 01, 2019-01-23 2Advance GTRA384802FC DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage (main) VGS = –8 V, ID = 10 mA V(BR)DSS 150 — — V (peak) VGS = –8 V, ID = 10 mA V(BR)DSS 150 — — V Drain-source Leakage Current VGS = –8 V, VDS = 10 V IDSS — — 5 mA Gate Threshold Voltage (main) VDS = 10 V, ID = 10 mA VGS(th) — –3 — V (peak) VDS = 10 V, ID = 10 mA VGS(th) — –3 — V Recommended Operating Conditions Parameter Conditions Symbol Min Typ Max Unit Drain Operating Voltage VDD 0 — 50 V Gate Quiescent Voltage VDS = 48 V, ID = 250 mA VGS(Q) — –3 — V Absolute Maximum Ratings Parameter Symbol Value Unit Drain-source Voltage VDSS 125 V Gate-source Voltage VGS –10 to +2 V Gate Current (main) IG 25.2 mA (peak) IG 36 mA Drain Current (main) ID 9.5 A (peak) ID 13.5 A Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated within the operating voltage range (VDD) specified above. Thermal Characteristics Parameter Symbol Value Unit Thermal Resistance RqJC TBD °C/W

Ordering Information

Type and Version Order Code Package Description Shipping GTRA384802FC V1 R0 TBD H-37248C-4 Tape & Reel, 50 pcs GTRA384802FC V1 R2 TBD H-37248C-4 Tape & Reel, 250 pcs

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 01, 2019-01-23 3Advance GTRA384802FC Lead connections for GTRA384802FC Pinout Diagram (top view) S D1 D2 G1 G2 Pin Description D1 Drain Device 1 (Main) D2 Drain Device 2 (Peak) G1 Gate Device 1 (Main) G2 Gate Device 2 (Peak) S Source (flange) Main Peak

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 01, 2019-01-23 4Advance GTRA384802FC Package Outline Specifications Package H-37248C-4 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994 2. Primary dimensions are mm, alternate dimensions are inches 3. All tolerances ± 0.127 [0.005] 4. Pins: D1, D2 – drain, G1, G2 – gate, S – source (flange) 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch] 12.70 [.500] 19.81±0.20 [.780±0.008] 3.81 [.150] 9.78 [.385] 4.83±0.51 [.190±0.020] 3.78±0.25 [.149±0.010] SPH 1.57 [.062] 1.02 [.040] 20.57 [.810] (8.89 [.350]) (5.08 [.200]) (19.43 [.765]) D1 D2 G1 G2 S C66065-A0004-C446-01-0027 : h-37248c-4_PO_11-02-2016 R0.51 +0.38 –0.13 R.020+.015 –.005 CL LC CL 45° X 2.72 [.107]

www.wolfspeed.comRev. 01, 2019-01-23 5Advance GTRA384802FC Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat- ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. For more information, please contact:

4600 Silicon Drive

Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2019-01-23 Advance All Data Sheet reflects advance specification for product development