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Document overview
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- PDF pages: 5
Technical content
Features
- GaN on SiC HEMT technology
- Input matched
- Typical Pulsed CW performance, 3500 MHz, 48 V, combined outputs - Output power at P 3dB = 200 W - Efficiency = 60% - Gain = 12.5 dB
- Capable of handling 10:1 VSWR @50 V, 30 W (WCDMA) output power
- RoHS-compliant
Description
The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficency, and a themally-enhanced package with earless flange. RF Characteristics Single-carrier WCDMA Specifications (tested in Doherty test fixture) VDD = 48 V, IDQ = 110 mA, POUT = 29 W avg, VGS(PEAK) = –5.5 V, ƒ1 = 3600 MHz, 3GPP , channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Linear Gain Gps — 13.5 — dB Drain Efficiency hD — 46 — % Adjacent Channel Power Ratio ACPR — –28 — dBc Output PAR @ 0.01% CCDF OPAR — –7.9 — dB GTRA362002FC Package H-37248C-4
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-04-03 2Preliminary GTRA362002FC DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage VGS = –8 V, ID = 10 mA V(BR)DSS 150 — — V Drain-source Leakage Current VGS = –8 V, VDS = 10 V IDSS — — 2 mA Gate Threshold Voltage VDS = 10 V, ID = 10 mA VGS(th) –3.8 –3.0 –2.3 V Recommended Operating Conditions Parameter Conditions Symbol Min Typ Max Unit Drain Operating Voltage VDD 0 — 50 V Gate Quiescent Voltage VDS = 48 V, ID = 0.11 A VGS(Q) — –2.8 — V Absolute Maximum Ratings Parameter Symbol Value Unit Drain-source Voltage VDSS 125 V Gate-source Voltage VGS –10 to +2 V Gate Current IG 11 mA Drain Current ID 4.6 A Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated within the operating voltage range (V DD) specified above. Thermal Chracteristics Parameter Symbol Value Unit Thermal Resistance, Junction to Case RqJC TBD °C/W
Ordering Information
Type and Version Order Code Package Shipping GTRA362002FC V1 R0 TBD H-37248C-4, earless flange Tape & Reel, 50 pcs GTRA362002FC V1 R2 TBD H-37248C-4, earless flange Tape & Reel, 250 pcs
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-04-03 3Preliminary GTRA362002FC Pinout Diagram (top view) S D1 D2 G1 G2 Pin Description D1 Drain Device 1 D2 Drain Device 2 G1 Gate Device 1 G2 Gate Device 2 S Source (flange) See next page for Package Outline Specifications
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-04-03 4Preliminary GTRA362002FC Package Outline Specifications Package H-37248C-4 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994 2. Primary dimensions are mm, alternate dimensions are inches 3. All tolerances ± 0.127 [0.005] 4. Pins: D1, D2 – drain, G1, G2 – gate, S – source (flange) 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch] 12.70 [.500] 19.81±0.20 [.780±0.008] 3.81 [.150] 9.78 [.385] 4.83±0.51 [.190±0.020] 3.78±0.25 [.149±0.010] SPH 1.57 [.062] 1.02 [.040] 20.57 [.810] (8.89 [.350]) (5.08 [.200]) (19.43 [.765]) D1 D2 G1 G2 S C66065-A0004-C446-01-0027 : h-37248c-4_PO_11-02-2016 R0.51 +0.38 –0.13 R.020+.015 –.005 CL LC CL 45° X 2.72 [.107]
Revision History
Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2016-07-14 Advance All Data Sheet reflects advance specification for product development 02 2017-07-21 Advance All Revised Features and Target RF Characteristics Includes Package 03 2018-04-03 Preliminary All Data Sheet reflects preliminary specification Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. Preliminary GTRA362002FC www.wolfspeed.comRev. 03, 2018-04-03 Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat- ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.. For more information, please contact: Jeff Martin RF Sales 1.919.407.5983 Daniel Rodriguez Marketing 1.408.776.0600 Or email: wireless.sales@wolfspeed.com