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Document overview
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Technical content
Features
- GaN on SiC HEMT technology
- Asymmetric Doherty design - Main: P1dB = 20 W Typ - Peak: P1dB = 37 W Typ
- Typical pulsed CW performance, 3500 MHz, 48 V - Output power at P3dB = 50 W - Gain = 15 dB - Efficiency = 55%
- Low thermal resistance
Description
The GTRA360502M is a 50-watt (P3dB) GaN on Sic high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally- enhanced, overmold package. Target RF Characteristics Single-carrier WCDMA Specifications (tested in Wolfspeed test fixture) VDD = 48 V, IDQ = 26 mA, POUT = 7 W avg, VGS(PEAK) = VGS @ IDQ = 43 mA – 2.5 V, ƒ = 3600 MHz, 3GPP , channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps — 15 — dB Drain Efficiency hD — 55 — % Adjacent Channel Power Ratio ACPR — –22 — dBc GTRA360502M Package: PG-DFN-6.5x7-1 Preliminary GTRA360502M Thermally-Enhanced High Power RF GaN on SiC HEMT
50 W, 48 V, 3400 – 3800 MHz
Characteristic Conditions Symbol Min T yp Max Unit Drain-source Breakdown Voltage (main) VGS = –8 V, ID = 0.36 mA V(BR)DSS 150 — — V (pe ak) VGS = –8 V, ID = 0.60 mA V(BR)DSS 150 — — V Dr ain-source Leakage Current VGS = –8 V, VDS = 10 V IDSS — — 5 mA Gat e Threshold Voltage (main) VDS = 10 V, ID = 26 mA VGS(th) — –3 — V (pe ak) VDS = 10 V, ID = 43 mA VGS(th) — –3 — V Recommended Operating Conditions Parameter Conditions Symbol Min Typ Max Unit Operating Voltage VDD 0 — 50 V Gat e Quiescent Voltage VDS = 48 V, ID = TBD mA VGS(Q) — TBD — V Absolute Maximum Ratings Parameter Symbol V alue Unit Drain-source Voltage VDSS 125 V Gat e-source Voltage VGS –10 t o +2 V Oper ating Voltage VDD 55 V Gat e Current (main) IG 2.5 mA (peak) IG 4.3 mA Dr ain Current (main) ID 0.97 A (peak) ID 1.6 A Junction T emperature TJ 225 °C St orage Temperature Range TSTG –65 t o +150 °C Oper ation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated within the operating voltage range (V DD) specified above. Thermal Chracteristics Thermal resistance, junction to case (TFLANGE = 70°C) Parameter Symbol V alue Unit Thermal Resistance Main: XXX W CW , 48 V, IDQ = XXX mA, XXXX MHz RqJC TBD °C/W Peak: XXX W CW , 48 V, IDQ = XXX mA, XXXX MHz RqJC TBD °C/W Moisture Sensitivity Level Level T est Signal P ackage Temperature Unit
3 IPC/ JEDEC J-STD-020 260 °C
Rev. 01, 2020-07-16 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
Ordering Information
Type and Version Order Code Package Shipping GTRA360502M V1 (TBD) TBD PG-DFN-6.5x7-1, overmold TBD Pinout Diagram (bottom view) Pin Description
1 VGS/ RFIN (Main)
2 N/C*
3 VGS/ RFIN (Peak)
4 VDS/ RFOUT (Peak)
5 N/C*
6 VDS/ RFOUT (Main)
S Ground (package, bottom metallization) * It is recommended that all pins labelled "NC" be connected to ground 456 321 S
Package Outline Specifications Package PG-DFN-6.5x7-1 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Package dimensions: 7.00mm X 6.50mm X 0.90mm 3. Primary dimensions are mm; alternate dimensions are inches 4. Pins: see Pinout Diagram previous page 5. Gold plating thickness: 0.125 – 0.350 micron [5 – 14 microinch] 6. Coplanarity applies to the terminals and all other bottom surface metallization TOP VIEW BOTTOM VIEW SIDE VIEW 3.60±0.10 [.142±.004] 6X 0.02+0.03 -0.02 [.001+.001 -.001 ] SPH 7.00 [.276] 6.50 [.256] 6X 0.90±0.10 [.035±.004] INDEX MARKING S A$C46D902E1.DWG_pg-dfn-6.5x7-1_PO_4-22-20_bn 4X 1.60 [.063] 5.31±0.10 [.209±.004] 6X 1.00±0.10 [.039±.004] 6X 0.80±0.05 [.031±.002] BA 0.05 C 0.05 0.05 C 0.05 C 0.10 C 0.08 C C
0.10 CAB
0.05 C 32 1 45 6 INDEX MARKING RIGHT VIEW 0.40 [.016] 0.40 [.016] C
Rev. 01, 2020-07-16 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com Preliminary GTRA360502M Rev. 01, 2020-07-16 www.wolfspeed.com
Revision History
Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2020-07-16 Preliminary All Data Sheet reflects preliminary specification for product development © 2020 Cree, Inc. All rights reserved. Wolfspeed® and the Wolfspeed logo are registered trademarks of Cree, Inc. For more information, please contact:
4600 Silicon Drive
Durham, North Carolina, USA 27703 www.wolfspeed.com/rf Sales Contact rfsales@cree.com Notes & Disclaimer Specifications are subject to change without notice. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. Cree products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. No responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from use of the information contained herein. No license is granted by implication or otherwise under any patent or patent rights of Cree.