GTRA263902FC

GTRA263902FC CREE | Alldatasheet

Document overview

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Technical content

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-07-05 All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! GTRA263902FC Package H-37248C-4 Thermally-Enhanced High Power RF GaN on SiC HEMT

370 W, 48 V, 2495 – 2690 MHz Features

• GaN on SiC HEMT technology
• Input matched
• Typical Pulsed CW performance, 2690 MHz, 48 V, combined outputs - Output power at P 3dB = 370 W - Efficiency = 70% - Gain = 15 dB
• Capable of handling 10:1 VSWR @48 V, 56 W (CW) output power
• Human Body Model class 1A (per ANSI/ESDA/ JEDEC JS-001)
• Low thermal resistance
• Pb-free and RoHS compliant

Description

The GTRA263902FC is a 370-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. RF Characteristics Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty production test fixture) VDD = 48 V, IDQ = 200 mA, VGS(PEAK) = VGS @ IDQ = 280 mA –3.0 V, POUT = 56.2 W avg, ƒ = 2690 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Linear Gain Gps 12.5 13.8 — dB Drain Efficiency hD 50 54 — % Adjacent Channel Power Ratio ACPR — –27 –23 dBc Output PAR @ 0.01% CCDF OPAR 5 6.7 — dB -80 -60 -40 -20 25 30 35 40 45 50 55 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 200 mA, VGS(PEAK) = -6.0 V, ƒ = 2690 MHz, 3GPP WCDMA signal, PAR = 10 dB,

3.84 MHz BW

PAR @ 0.01% CCDF gtra263902fc_g1 GTRA263902FC

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-07-05 2GTRA263902FC DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage (Main) VGS = –8 V, ID = 10 mA V(BR)DSS 150 — — V (Peak) VGS = –8 V, IDS = 10 mA V(BR)DSS 150 — — V Drain-source Leakage Current (Main) VGS = –8 V, VDS = 10 V IDSS — — 2.7 mA Gate Threshold Voltage (Main) VDS = 10 V, ID = 20 mA VGS(th) –3.8 –3 –2.3 V (Peak) VDS = 10 V, ID = 28.8 mA VGS(th) –3.8 –3 –2.3 V Recommended Operating Conditions Parameter Conditions Symbol Min Typ Max Unit Operating Voltage VDD 0 — 55 V Gate Quiescent Voltage VDS = 48 V, ID = 200 mA VGS(Q) — –3 — V Absolute Maximum Ratings Parameter Symbol Value Unit Drain-source Voltage VDSS 125 V Gate-source Voltage VGS –10 to +2 V Gate Current IG 20 mA Drain Current ID 7.5 A Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated within the operating voltage range (V DD) specified above. Thermal Characteristics Characteristic Symbol Value Unit Thermal Resistance (Main, TCASE = 70°C, PDISS = 77 DC) RqJC 1.8 °C/W

Ordering Information

Type and Version Order Code Package Description Shipping GTRA263902FC V2 R0 GTRA263902FC-V2-R0 H-37248C-4, earless flange Tape & Reel, 50 pcs GTRA263902FC V2 R2 GTRA263902FC-V2-R2 H-37248C-4, earless flange Tape & Reel, 250 pcs

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-07-05 3GTRA263902FC Typical RF Performance (data taken in production test fixture) -70 -60 -50 -40 -30 -20 -10 25 30 35 40 45 50 55 Efficiency (%) ACP Up & Low (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 200 mA, VGS(PEAK) = -6.0 V, ƒ = 2690 MHz, 3GPP WCDMA signal, PAR = 10 dB, BW = 3.84 MHz ACPU ACPL Efficiency gtra263902fc_g2 2525 2575 2625 2675 2725 Efficiency (%) Gain (dB) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 48 V, IDQ(MAIN) = 200 mA, VGS(PEAK) = -6.0 V, POUT = 47.5 dBm, 3GPP WCDMA signal, PAR = 10 dB Efficiency Gain gtra263902fc_g3 -35 -30 -25 -20 -15 -10 -40 -35 -30 -25 -20 -15 -10 2525 2575 2625 2675 2725 Return Loss (dB) ACPL & ACP Up (dBc) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 48 V, IDQ(MAIN) = 200 mA, VGS(PEAK) = -6.0 V, POUT = 47.5 dBm, 3GPP WCDMA signal, PAR = 10 dB ACPU ACPL IRL gtra263902fc_g4 29 33 37 41 45 49 53 57 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 48 V, IDQ(MAIN) = 200 mA, VGS(PEAK) = -6.0 V 2620MHz 2655MHz 2690MHz gtra263902fc_g5 2620MHz 2655MHz 2690MHz Gain Efficiency

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-07-05 4GTRA263902FC Typical RF Performance (cont.) Load Pull Performance Main Side Load Pull Performance – Pulsed CW signal: 10 µs, 10% duty cycle, 48 V, IDQ = 200 mA, class AB P3dB Max Output Power Max Drain Efficiency Freq [MHz] Zs [W] ZL [W] Gain [dB] P3dB [dBm] P3dB [W] hD [%] ZL [W] Gain [dB] P3dB [dBm] P3dB [W] hD [%] Peak Side Load Pull Performance – Pulsed CW signal: 10 µs, 10% duty cycle, 48 V, VGS(PEAK) = -5 V, class C P3dB Max Output Power Max Drain Efficiency Freq [MHz] Zs [W] ZL [W] Gain [dB] P3dB [dBm] P3dB [W] hD [%] ZL [W] Gain [dB] P3dB [dBm] P3dB [W] hD [%] 29 33 37 41 45 49 53 57 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance at various VDD IDQ(MAIN) = 200 mA, VGS(PEAK) = -6.0V, ƒ = 2690 MHz 44V 48V 52V gtra263902fc_g6 Gain Efficiency -18 -16 -14 -12 -10 2525 2575 2625 2675 2725 2775 2825 Input Return Loss (dB) Gain (dB) Frequency (MHz) CW Performance Small Signal Gain & Input Return Loss VDD = 48 V, IDQ(MAIN) = 200 mA, VGS(PEAK) = -6.0 V IRL Gain gtra263902fc_g7

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-07-05 5GTRA263902FC Reference Circuit, 2620 – 2690 MHz Reference circuit assembly diagram (not to scale) R101 C106 C107 R102 C110 C109 C108 C101 C102C103 C105 C104 R103 C202 C203 C204 C201 C206 C208 C207 C209 C210 C211 VDD VGS (MAIN) RF_OUTRF_IN RO4350, 20 MIL (290) RO4350, 20 MIL (290) GTRA263902FC_IN_03A GTRA263902FC_OUT_03AVGS (PEAK) VDD C205 C212 GTRA26 39 02FC_CD_06-13-20 18

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-07-05 6GTRA263902FC Reference Circuit (cont.) Reference Circuit Assembly DUT GTRA263902FC V2 Test Fixture Part No. LTA/GTRA263902FC V2 PCB Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66, ƒ = 2620 – 2690 MHz Find Gerber files for this test fixture on the Wolfspeed Web site at www.wolfspeed.com/RF Components Information Component Description Manufacturer P/N Input C101, C105, C107, C108 Capacitor, 10 pF ATC ATC800A100JT250T C102, C109 Capacitor, 1 µF Murata Electronics North America GRM21BR71H105KA12L C103, C110 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C104 Capacitor, 1.0 pF ATC ATC600S1R0JT250T C106 Capacitor, 1.2 pF ATC ATC600S1R2JT250T R101, R102 Resistor, 5.6 ohms Panasonic Electronic Components ERJ-8RQJ5R6V R103 Resistor, 50 ohms Richardson C16A50Z4 U1 Hybrid Coupler Anaren X3C26P1-03S Output C201, C206 Capacitor, 1.5 pF ATC ATC600S1R5JT250T C202, C209 Capacitor, 10 pF ATC ATC800A100JT250T C203, C210 Capacitor, 1 µF TDK Corporation C4532X7R2A105M230KA C204, C211,C212 Capacitor, 10 µF AVX Corporation 2225PC105KAT1A C205 Capacitor, 220 µF Panasonic Electronic Components ECA-2AHG221 C207, C208 Capacitor, 10 pF ATC ATC600F100JW250T Pinout Diagram (top view) S D1 D2 G1 G2 Pin Description D1 Drain Device 1 D2 Drain Device 2 G1 Gate Device 1 G2 Gate Device 2 S Source (flange) Main Peak

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-07-05 7GTRA263902FC Package Outline Specifications (top view) Package H-37248C-4 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994 2. Primary dimensions are mm, alternate dimensions are inches 3. All tolerances ± 0.127 [0.005] 4. Pins: D1, D2 – drain, G1, G2 – gate, S – source (flange) 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch] 12.70 [.500] 19.81±0.20 [.780±0.008] 3.81 [.150] 9.78 [.385] 4.83±0.51 [.190±0.020] 3.78±0.25 [.149±0.010] SPH 1.57 [.062] 1.02 [.040] 20.57 [.810] (8.89 [.350]) (5.08 [.200]) (19.43 [.765]) D1 D2 G1 G2 S C66065-A0004-C446-01-0027 : h-37248c-4_PO_11-02-2016 R0.51 +0.38 –0.13 R.020+.015 –.005 CL LC CL 45° X 2.72 [.107]

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2016-09-14 Advance All Data Sheet reflects advance specification for product development 02 2017-05-09 Production All Data Sheet reflects released product specification 02.1 2017-09-18 Production 2 5, 6 Updated operating voltage, added ordering code Added C212 to circuit, corrected P/N for C104, C106, C201, C206 03 2018-03-08 Production All Revised product from V1 to V2, ordering code change, products manufacture with new assembly technology Updated thermal characteristics 04 2018-07-05 Production All Converted to Wolfspeed Data Sheet www.wolfspeed.comRev. 04, 2018-07-05 8GTRA263902FC Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat- ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact:

4600 Silicon Drive

Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816