GTRA262802FC-V2-R0

GTRA262802FC CREE | Alldatasheet

Document overview

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Technical content

Features

• GaN on SiC HEMT technology
• Input matched
• Typical pulsed CW performance, 2605 MHz, 48 V, combined outputs, 16 µs pulse width - Output power at P 3dB = 250 W - Efficiency = 62% - Gain = 14.4 dB
• Capable of handling 10:1 VSWR @48 V, 38 W (CW) output power
• Human Body Model Class 1A (per ANSI/ESDA/ JEDEC JS-001)
• Low thermal resistance
• Pb-free and RoHS compliant -70 -50 -30 -10 25 30 35 40 45 50 55 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 100 mA, VGS(PEAK) = –5.0 V, ƒ = 2635 MHz, 3GPP WCDMA signal, PAR = 10 dB,

3.84 MHz BW

PAR @ 0.01% CCDF gtra262802fc_g1 GTRA262802FC

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-07-24 2GTRA262802FC DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage (main) VGS = –8 V, ID = 10 mA V(BR)DSS 150 — — V (peak) VGS = –8 V, ID = 10 mA V(BR)DSS 150 — — V Drain-source Leakage Current VGS = –8 V, VDS = 10 V IDSS — — 5 mA Gate Threshold Voltage (main) VDS = 10 V, ID = 10.8 mA VGS(th) –3.5 –3 –2.5 V (peak) VDS = 10 V, ID = 20 mA VGS(th) –3.5 –3 –2.5 V Recommended Operating Conditions Parameter Conditions Symbol Min Typ Max Unit Operating Voltage VDD 0 — 55 V Gate Quiescent Voltage VDS = 48 V, ID = 100 mA VGS(Q) — –3.0 — V Absolute Maximum Ratings Parameter Symbol Value Unit Drain-source Voltage VDSS 125 V Gate-source Voltage VGS –10 to +2 V Gate Current (main) IG 10.8 mA (peak) IG 20 mA Drain Current (main) ID 4.0 A (peak) ID 7.5 A Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings; exceed- ing only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated within the operating voltage range (V DD) specified above. Thermal Characteristics Parameter Symbol Value Unit Thermal Resistance (main, TCASE = 70 °C, 38 W CW) RqJC 1.71 °C/W

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-07-24 3GTRA262802FC

Ordering Information

Type and Version Order Code Package Description Shipping GTRA262802FC V2 R0 GTRA262802FC-V2-R0 H-37248C-4 Tape & Reel, 50 pcs GTRA262802FC V2 R2 GTRA262802FC-V2-R2 H-37248C-4 Tape & Reel, 250 pc Typical Performance (data taken in a production test fixture) -70 -60 -50 -40 -30 -20 -10 25 30 35 40 45 50 55 Efficiency (%) ACP Up & Low (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 100 mA, VGS(PEAK) = –5.0 V, ƒ = 2635 MHz, 3GPP WCDMA signal, PAR = 10 dB, gtra262802fc_g2 20 2450 2500 2550 2600 2650 2700 2750 Efficiency (%) Gain (dB) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 48 V, IDQ(MAIN) = 100 mA, VGS(PEAK) = –5.0 V, POUT = 45.8 dBm, 3GPP WCDMA signal, PAR = 10 dB Efficiency Gain gtra262802fc_g3

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-07-24 4GTRA262802FC Typical Performance (cont.) -30 -25 -20 -15 -10 -35 -30 -25 -20 -15 -10 2450 2500 2550 2600 2650 2700 2750 Return Loss (dB) ACPL & ACP Up (dBc) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 48 V, IDQ(MAIN) = 100 mA, VGS(PEAK) = -5.0 V, POUT = 45.8 dBm, 3GPP WCDMA signal, PAR = 10 dB ACPU ACPL IRL gtra262802fc_g4 15 33 37 41 45 49 53 57 Efficiency (%) Gain (dB) Output Power (dBm) Pulse CW Performance VDD = 48 V, IDQ(MAIN) = 100 mA, VGS(PEAK) = –5.0 V 2635MHz Gain 2575MHz Gain 2605MHz Gain 2575MHz Eff 2605MHz Eff 2635MHz Eff gtra262802fc_g5.1 33 37 41 45 49 53 57 Efficiency (%) Gain (dB) Output Power (dBm) Pulse CW Performance at various VDD IDQ(MAIN) = 100 mA, VGS(PEAK) = –5 V, ƒ = 2635 MHz 44V Gain 48V Gain 52V Gain 44V Eff 48V Eff gtra262802fc_g6.1 -12 -10 2400 2500 2600 2700 2800 Input Return Loss (dB) Gain (dB) Frequency (MHz) CW Performance Small Signal Gain & Input Return Loss VDD = 48 V, IDQ(MAIN) = 100 mA, VGSPEAK = –5.0 V IRL Gain gtra262802fc_g7

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-07-24 5GTRA262802FC Load Pull Performance Main Side Load Pull Performance – Pulsed CW signal: 10 µs, 10% duty cycle, 48 V, IDQ = 100 mA, Class AB P3dB Max Output Power Max Drain Efficiency Freq [MHz] Zs [W] Zl [W] Gain [dB] P3dB [dBm] P3dB [W] hD [%] Zl [W] Gain [dB] P3dB [dBm] P3dB [W] hD [%] Peak Side Load Pull Performance – Pulsed CW signal: 160 µs, 10% duty cycle, 48 V, IDQ = 200 mA, Class AB P3dB Max Output Power Max Drain Efficiency Freq [MHz] Zs [W] Zl [W] Gain [dB] P3dB [dBm] P3dB [W] hD [%] Zl [W] Gain [dB] P3dB [dBm] P3dB [W] hD [%] See next page for Reference Circuit

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-07-24 6GTRA262802FC Reference Circuit, 2575 – 2635 MHz Reference circuit assembly diagram (not to scale) C101 R101 C102 C103 C104 C105 R102R103 C106 C107 C206 C204 C203C202C201 C208 C207 C209 C210 C212C213 C211 C214 GTRA262802FC_IN_01 RF_IN RF_OUT VDD VGS(MAIN) VDD g t r a 2 6 2 8 0 2 f c _ C D _ 0 3 - 2 0 - 2 0 1 7 RO4350, 20 MIL GTRA262802FC_OUT_01 RO4350, 20 MIL C215 C205 VGS(PEAK)

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-07-24 7GTRA262802FC Reference Circuit (cont.) Reference Circuit Assembly DUT GTRA262802FC V2 Test Fixture Part No. LTA/GTRA262802FC V2 PCB Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66, ƒ = 2575 – 2635 MHz Find Gerber files for this test fixture on the Wolfspeed Web site at http://www.wolfspeed.com/RF Components Information Component Description Manufacturer P/N Input C101, C104, C105, C106 Capacitor, 10 pF ATC ATC600F100JT250XT C102, C107 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C103 Capacitor, 0.5 pF ATC ATC600F0R5BT250XT R101, R102 Resistor, 20 ohms Panasonic Electronic Components ERJ-8GEYJ200V R103 Resistor, 50 ohms Richardson C8A50Z4A U1 Hybrid coupler Anaren X3C26P1-03S Output C201, C207, C209, C211 Capacitor, 10 pF ATC ATC600F100JT250XT C202, C203, C204, C212, C213, C214 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C205, C215 Capacitor, 470 µF Cornell Dubilier Electronics (CDE) SEK471M050ST C206 Capacitor, 0.8 pF ATC ATC600F0R8BT250XT C208 Capacitor, 0.2 pF ATC ATC600F0R2BT250XT C210 Capacitor, 0.5 pF ATC ATC600F0R5BT250XT Pinout Diagram (top view) Lead connections for GTRA262802FC V2 S D1 D2 G1 G2 MainPeak PeakMain Pin Description D1 Drain Device 1 (Main) D2 Drain Device 2 (Peak) G1 Gate Device 1 (Main) G2 Gate Device 2 (Peak) S Source (flange)

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-07-24 8GTRA262802FC Package Outline Specifications Package H-37248C-4 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994 2. Primary dimensions are mm, alternate dimensions are inches 3. All tolerances ± 0.127 [0.005] 4. Pins: D1, D2 – drain, G1, G2 – gate, S – source (flange) 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch] 12.70 [.500] 19.81±0.20 [.780±0.008] 3.81 [.150] 9.78 [.385] 4.83±0.51 [.190±0.020] 3.78±0.25 [.149±0.010] SPH 1.57 [.062] 1.02 [.040] 20.57 [.810] (8.89 [.350]) (5.08 [.200]) (19.43 [.765]) D1 D2 G1 G2 S C66065-A0004-C446-01-0027 : h-37248c-4_PO_11-02-2016 R0.51 +0.38 –0.13 R.020+.015 –.005 CL LC CL 45° X 2.72 [.107]

www.wolfspeed.comRev. 03, 2018-07-24 Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat- ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. For more information, please contact:

4600 Silicon Drive

Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816 GTRA262802FC

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2016-05-26 Advance All Data Sheet reflects advance specification for product development 02 2017-03-22 Production All Data Sheet reflects released product specification 02.1 2017-09-19 Production 2 Updated operating voltage 03 2018-07-24 Production All Revised to V2. Converted to Wolfspeed data sheet.