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Document overview
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- PDF pages: 8
Technical content
Features
- GaN on SiC HEMT technology
- Input matched
- Asymmetric Doherty design - Main: P3dB = 170 W Typ - Peak: P3dB = 350 W Typ
- Typical pulsed CW performance: 16 μs pulse width, 10% duty cycle, 2140 MHz, 48 V, Doherty fixture - Gain = 15 dB @ 49 dBm - Efficiency = 60% @ 49 dBm - Output power at P 3dB = 490 W
- Human Body Model Class 1B (per ANSI/ESDA/JEDEC JS-001)
- Low thermal resistance
- Pb-free and RoHS compliant
Description
The GTRA214602FC is a 490-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Target RF Characteristics Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty test fixture) VDD = 48 V, IDQ = 150 mA, VGS(PEAK) = –5.5 V, POUT = 80 W avg, ƒ = 2170 MHz 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 13 14.4 — dB Drain Efficiency D 56 59 — % Adjacent Channel Power Ratio ACPR — –30 –27 dBc Output PAR @ 0.01% CCDF OPAR 7.1 8.2 — dB GTRA214602FC Package H-37248C-4 GTRA214602FC Thermally-Enhanced High Power RF GaN on SiC HEMT
490 W, 48 V, 2110 – 2170 MHz
-80 -60 -40 -20 25 30 35 40 45 50 55 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 150 mA, ƒ = 2170 MHz, 3GPP WCDMA signal, 10 dB PAR,
3.84 MHz bandwidth
PAR @ 0.01% CCDF g214602f c- gr 1a
Rev. 02, 2020-11-10 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com DC Characteristics Characteristics Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage (main) V GS = –8 V, ID = 10 mA V(BR)DSS 150 — — V Drain-source Breakdown Voltage (peak) V GS = –8 V, ID = 10 mA V(BR)DSS 150 — — V Drain-source Leakage Current V GS = –8 V, VDS = 10 V I DSS — — 5.5 mA Gate Threshold Voltage (main) V DS = 10 V, ID = 20 mA V GS(th) –3.8 –3.0 –2.3 V Gate Thres old Voltage (peak) VDS = 10 V, ID = 38 mA V GS(th) –3.8 –3.0 –2.3 V Recommended Operating Conditions Parameter Conditions Symbol Min Typ Max Unit Operating Voltage VDD 0 — 50 V Gate Quiescent Voltage V DS = 48 V, ID = 150 mA V GS(Q) –3.7 –3.1 –2.6 V Absolute Maximum Ratings Parameter Symbol Value Unit Drain-source Voltage VDSS 125 V Gate-source Voltage VGS –10 to +2 V Operating Voltage VDD 55 V Gate Current (main) IG 20 mA Gate Current (peak) IG 38.4 mA Drain Current (main) ID 7.5 A Drain Current (peak) ID 14.4 A Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated within the operating voltage range (VDD) specified above. Thermal Characteristics Thermal resistance, junction to case: TCASE = 70°C, 2170 MHz, VDD = 48 V, IDQ(MAIN) = 150 mA, VGS(PEAK) = –5.5 V Characteristics Conditions Symbol Value Unit Thermal Resistance (main) 76 W DC RJC 2.0 °C/W (peak) 106 W DC RJC 1.5 °C/W
Ordering Information
Type and Version Order Code Package Shipping GTRA214602FC V1 R0 GTRA214602FC-V1-R0 H-37248C-4 Tape & Reel, 50 pcs GTRA214602FC V1 R2 GTRA214602FC-V1-R2 H-37248C-4 Tape & Reel, 250 pcs
Rev. 02, 2020-11-10 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com -65 -55 -45 -35 -25 -15 25 30 35 40 45 50 55 Efficiency (%) ACP Up, ACP Low (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 150 mA, ƒ = 2170 MHz, 3GPP WCDMA signal, 10 dB PAR, -20 -15 -10 -40 -35 -30 -25 2025 2075 2125 2175 2225 2275 Return Loss (dB) ACPL & ACP Up (dBc) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 48V, IDQ(MAIN) = 150 mA, POUT = 49 dBm, 3GPP WCDMA signal, 10 dB PAR, 2025 2075 2125 2175 2225 2275 Efficiency (%) Gain (dB) Frequency (MHz) Single-Carrier WCDMA Broadband Performance VDD = 48 V, IDQ(MAIN) = 150 mA, POUT = 49 dBm, 3GPP WCDMA signal, 10 dB PAR, Efficiency (%) Gain (dB) Output Power (dBm) Pulsed CW Performance VDD = 48 V, IDQ = 150 mA, 40 μs pulse width, 10% duty cycle
2110 MHz Gain
2140 MHz Gain
2170 MHz Gain
2110 MHz Eff
2140 MHz Eff
2170 MHz Eff
Typical Performance (data taken in a Wolfspeed production test fixture)
Rev. 02, 2020-11-10 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com Typical Performance (cont.) 28 32 36 40 44 48 52 56 60 Efficiency (%) Gain (dB) Output Power (dBm) PulsedCW Performance at various VDD IDQ = 150 mA, 40 μs pulse width, 10% duty cycle, ƒ = 2170 MHz
44 V Gain
48 V Gain
50 V Gain
44 V Eff
48 V Eff
50 V Eff
-15 -10 2025 2075 2125 2175 2225 Input Return Loss (dB) Gain (dB) Frequency (MHz) CW Performance Small Signal Gain & Input Return Loss VDD = 48 V, IDQ = 150 mA, Gain Input Return Loss g214602f c- gr 7 Load Pull Main Side Load Pull Performance – Pulsed CW signal: 10 μs pulse width, 10% duty cycle; 48 V, IDQ = 150 mA, class AB P3dB Max Output Power Max Drain Efficiency Freq [MHz] Zs [ Zl [ Gain [dB] POUT [dBm] POUT [W] [%] Zl [ Gain [dB] POUT [dBm] POUT [W] [%] Peak Side Load Pull Performance – Pulsed CW signal: 10 μsec pulse width, 10% duty cycle; 48 V, VGS(PEAK) = –3.6 V, class C P3dB Max Output Power Max Drain Efficiency Freq [MHz] Zs [ Zl [ Gain [dB] POUT [dBm] POUT [W] [%] Zl [ Gain [dB] POUT [dBm] POUT [W] [%]
Rev. 02, 2020-11-10 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com Reference Circuit, 2110 – 2170 MHz Reference circuit assembly diagram (not to scale) Bias Sequencing Bias ON 1. Turn RF off 2. Appliy pinch-off voltage of to the gate 3. Turn off drain voltage 4. Turn off gate voltage Bias ON 1. Ensure RF is turned off 2. Apply pinch-off voltage of –5 V to the gate 3. Apply nominal drain voltage 4. Bias gate to desired quiescent drain current 5. Apply RF Reference Circuit Assembly DUT GTRA214602FC Test Fixture Part No. L TA/GTRA214602FC-V1 PCB Rogers 4350, 0.762 mm [0.030”] thick, 2 oz. copper,r = 3.66 Find Gerber files for this test fixture on the Wolfspeed Web site at www.wolfspeed.com/RF C103 C108 C201 C210C209 C211 RF_IN RF_OUT VGG VGG VDD VDD gtra214602fc_CD_2020-09-21_bn GTRA214602FC_OUT_01GTRA214602FC_IN_01 RO4350, 30 MILRO4350, 30 MIL GTRA214602FC ® ® C213 C214 C215 C208 C206 C207 C202 C205 C204 C203 C106 C101 C104 C107 R102C105 C109 R101 C102 R103 C212
Rev. 02, 2020-11-10 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com Pin Description D1 Drain Device 1 D2 Drain Device 2 G1 Gate Device 1 G2 Gate Device 2 S Source (flange) Pinout Diagram (top view) S D1 D2 G1 G2 MainPeak Components Table Component Description Manufacturer P/N Input C101, C105 Capacitor, 1.5 pF ATC ATC600F1R5BT250XT C102, C103, C107, C108 Capacitor, 18 pF ATC ATC600F180JT250XT C104, C109 Capacitor, 10 μF, 100 V Murata Electronics GRM32EC72A106KE05L C106 Capacitor, 1.3 pF ATC ATC600F1R3BT250XT R101, R102 Resistor, 9.1 ohms Panasonic Electronic Components ERJ-3GEY J9R1V R103 Resistor, 50 ohms Anaren C8A50Z4A U1 Hybrid coupler Anaren X3C21P1-03S Output C201, C209 Capacitor, 1 pF ATC ATC600F1R0BT250XT C202 Capacitor, 0.9 pF ATC ATC600F0R9BT250XT C203 Capacitor, 0.2 pF ATC ATC600F0R2BT250XT C204 Capacitor, 7.5 pF ATC ATC600F7R5BT250XT C205, C212 Capacitor, 18 pF ATC ATC600F180JT250XT C206, C207, C213, C214 Capacitor, 10 μF, 100 V Murata Electronics GRM32EC72A106KE05L C208, C215 Capacitor, 470 μF, 100 V Panasonic Electronic Components ECA-2AHG471B C210 Capacitor, 0.7 pF ATC ATC600F0R7BT250XT C211 Capacitor, 15 pF ATC ATC600F150JT250XT Reference Circuit (cont.) Main Peak
Rev. 02, 2020-11-10 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com Package Outline Specifications Package H-37248C-4 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994 2. Primary dimensions are mm, alternate dimensions are inches 3. All tolerances ± 0.127 [0.005] 4. Pins: D1, D2 – drain, G1, G2 – gate, S – source (flange) 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch] 12.70 [.500] 19.81±0.20 [.780±0.008] 3.81 [.150] 9.78 [.385] 4.83±0.51 [.190±0.020] 3.78±0.25 [.149±0.010] SPH 1.57 [.062] 1.02 [.040] 20.57 [.810] (8.89 [.350]) (5.08 [.200]) (19.43 [.765]) D1 D2 G1 G2 S C66065-A0004-C446-01-0027 : h-37248c-4_PO_11-02-2016 R0.51 +0.38 –0.13 R.020+.015 –.005 CL LC CL 45° X 2.72 [.107]
Rev. 02, 2020-11-10 www.wolfspeed.com © 2019 – 2020 Cree, Inc. All rights reserved. Wolfspeed® and the Wolfspeed logo are registered trademarks of Cree, Inc. Notes & Disclaimer Specifications are subject to change without notice. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. Cree products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. No responsibility is assumed by Cree for any infringe- ment of patents or other rights of third parties which may result from use of the information contained herein. No license is granted by implication or otherwise under any patent or patent rights of Cree. For more information, please contact:
4600 Silicon Drive
Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816
Revision History
Revision Date Data Sheet Page Subjects (major changes at each revision) 01 2020-07-01 Advance all Proposed specification for new product development 01.1 2020-08-03 Advance 2 Update thermal resistance 02 2020-11-10 Production all Complete Data Sheet includes final specifications, performance information, reference circuit and more