GT43 NJSEMI | Alldatasheet
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Technical content
, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Darlington Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 GT43
DESCRIPTION
: V(BR)CEo= 300V(Min)
- High DC Current Gain : hFE= 2000(Min.)@ lc= 4A * Low Collector Saturation Voltage : VCE(satr 3.0V(Max.)@ lc= 6A
APPLICATIONS
- Switching for dynamotor excitation
- General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation ffh T~— "7^'P <SJ 1 C £-J\\- Junction Temperature Storage Temperature Range VALUE 400 300 100 150 -55-150 UNIT V V V A A W r 2 3
- HC^ PIN 1 BASE 2. COLLECTOR 3. EMITTER TO-3PN package i — B — •- -» ,^-'*™"F H : DIM A Q C D F F G H J K L N q R S U -•-R mm MIN 19.90 15 50 4.70 0.90 1.90 3.40 2.90 3.20 0.595 20.50 1.90 10.89 4.90 3.35 1.995 5.90 Y | 9.90 MAX 20.10 15 70 4.90 1.10 2.10 3.60 3.10 3.40 0.605 20,70 2.10 10.91 5.10 3.45 2.005 6.10 10.10 ^- ^» , o --<- NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Silicon NPN Darlington Power Transistor GT43
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VcE(sat)-1 VcE(sat)-2 ICBO IEBO hpE-1 hpE-2 PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS lc=10mA;lB=0 lc=1mA;lE=0 lE=50mA;lc=0 lc=1A;lB=10mA lc=6A; !B=50mA VCB= 400V; IE= 0 VEB= TV; lc= 0 lc= 4A; VCE= 4V lc= 5mA; VCE= 4V MIN 300 400 2000 300 TYP. MAX 1.5 3.0 100 100 UNIT V V V V V nA uA DC Current Gain Safe Operating Area 30000 £10000 O 5000 £ 3000 O o Q 1000 500 Tr - 71 ^r" .-"- -•y V . j ,B """-^1 <*- CE • 2.0 1-5
- -, S V . 0.05 0.1 0.3 0.5 1 3 5 Collector Current Ic (A) < 3 tamt O Collector current
0 P P
w u) in -• Tc=25 " C V s s y X V 1ms 10 30 50 100 300 Collector-Emitter Voltage VCK[V]