GMRB6 INFINEON | Alldatasheet
Document overview
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Technical content
Features
- GMR sensor in SMD package
- Sensitive to the direction, not to the intensity of the magnetic field
- Constant TC of basic resistanceR and magneto resistanceΔR
Applications
- Rotation and linear sensing with large airgaps
- Angle encoders
- Contactless potentiometers
- Incremental encoders Pin Configuration OHS00429 R 13 R R 4 2/5 Dimensions in mm 0.3-0.05 +0.1 +0.1 -0.050.6 B A
0.25 M B
1.1 max 2˚ ... 30˚ 2.6 max 10˚ max 10˚ max 0.1 max AM0.20 2.9±0.1 1.3±0.1 1.9 GPW06957 0.2 ±0.150.35 ±0.30.1 1.2 0.8 0.3 0.5 0.45 0.9 Reflow soldering Directions of internal magnetization
The GMR B6 is an angle sensor based on sputtered metallic multilayer technology. 4 resistors are monolithically integrated on 1 chip. They can be used as a fullbridge or, if 2 external resistors are added, as 2 halfbridges. The outstanding feature of this magnetic sensor is the fact, that it is sensitive to the orientation of the magnetic field and not to its intensity as long as the field is in a range between 5 … 15 kA/m. This means, the signal output of this sensor is independent of the sensor position relative to the magnet in lateral, axial or rotational direction in the range of several millimeters. Optimum results are achieved by using magnetic targets like permanent magnets or magnetic pole-wheels. There is no need for a biasing magnet! Due to the linear change of both, basic and field dependent part of the resistance vs. temperature, simple and efficient electronic compensation of TC (R,ΔR) is possible. Figure 1 Output Voltage of Half Bridges (V1, V4) and Full Bridge (V4 - V1) as a Function of the Magnetic Field Orientation GMR B6 N S Bridge Voltage [(VO * )/2] -10 AED02956 -0.5 0.5 90 180 270 Deg 360 V1- V4 Angle DR RO
The application mode of the GMR position sensor is preferably as a bridge or halfbridge circuit. In every case this type of circuit compensates for theTC of the resistance value R0. To compensate for theTC of the GMR effectΔR/R0, if there is the necessity, is left to the application circuit and can be done for example with a NIC circuit. When operated over a complete 360° turn, a total signal of≈ 20 mV/V is achieved at 25°C with a halfbridge. The output signal is doubled to of≈ 40 mV/V when a fullbridge circuit is used. In the case of linear position sensing, the electrical circuit remains unchanged. Maximum Ratings Parameter Symbol Value Unit Operating temperature TA –4 0…+1 5 0 °C Storage temperature Tstg –5 0…+1 5 0 °C Supply voltage V1 7V Thermal conductivity G thC A > 4 mW/K Magnetic field1) H rot < 15 kA/m 1) larger fields may reduce the magnetoresistive effect irreversibly Characteristics (TA =2 5°C) Parameter Symbol Value Unit Nominal supply voltage V1N 5V Basic resistance R0 > 700 Ω Magnetoresistive effect H rot= 5 ... 15 kA/m ΔR/R0 >4 % Output signal fullbridge @V1N =5V VOUT > 200 mV Offset voltage @ V1N =5V | V0|< 8 m V Temperature coefficient of basic resistance Temperature coefficient of magnetoresistance Temperature coefficient of magnetoresistive effect
Output Voltage Degradation (typical) at high Temperature Operation Basic Resistance (typical) versus Temperature R 0 =f(TA ) Magnetoresistive Effect (typical) versus Temperature ΔR /R 0 =f(TA ) AED02953 AT = 150 ˚C 210 103 104 100 Output Voltage (normalized) Operation Time h = 125 ˚CTA = 105 ˚CTA AED02954 T 80-40-20 0 20 40 60 80 100 150 100 110 120 Resistance (normalized) AED02959 T 60-50 ˚C 100 110 120 Magnetoresistive Effect (normalized) -10 30 70 110 150