GFP60N03 GE | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

Features

  • Advanced Trench Process Technology
  • High Density Cell Design for Ultra Low On-Resistance
  • Specially Designed for Low Voltage DC/DC Converters
  • Fast Switching for High Efficiency Mechanical Data Case: JEDEC TO-220AB molded plastic body Terminals:Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Mounting Torque:10 in-lbs maximum Weight:2.0g 0.154 (3.91) 0.142 (3.60)Dia. 0.560 (14.22) 0.530 (13.46) GDS 1.148 (29.16) 1.118 (28.40) 0.022 (0.56) 0.014 (0.36) 0.113 (2.87) 0.102 (2.56) 0.205 (5.20) 0.190 (4.83) 0.360 (9.14) 0.330 (8.38) PIN 0.415 (10.54) Max. 0.105 (2.67) 0.095 (2.41) D 0.155 (3.93) 0.134 (3.40) 0.635 (16.13) 0.580 (14.73) 0.410 (10.41) 0.350 (8.89) 0.160 (4.06) 0.09 (2.28) 0.037 (0.94) 0.026 (0.66) 0.603 (15.32) 0.573 (14.55) 0.185 (4.70) 0.170 (4.31) 0.055 (1.39) 0.045 (1.14) 0.104 (2.64) 0.094 (2.39) * May be notched or flat TO-220AB G D S Dimensions in inches and (millimeters)

N-Channel Enhancement-Mode MOSFET Electrical Characteristics(TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage BV DSS VGS = 0V, ID = 250µA3 0 V Gate Threshold Voltage V GS(th) VDS = VGS , ID = 250µA 1.0 3.0 Gate-Body Leakage I GSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current I DSS VDS = 30V, VGS = 0V 1 µA On-State Drain Current(1) ID(on) VDS ≥ 5V, VGS = 10V 60 A Drain-Source On-State Resistance(1) R DS(on) VGS = 10V, ID = 30A 9 11 m Ω VGS = 4.5V, ID = 25A 13 16 Forward Transconductance(1) gfs VDS = 10V, ID = 25A 40 S Diode Forward Voltage V SD IS = 25A, VGS = 0V 0.9 1.3 V Dynamic (1) Total Gate Charge Q g VDS =15V, VGS =5V , ID =50A 16 22 35 60 Gate-Source Charge Q gs VDS = 15V, VGS = 10V nC Gate-Drain Charge Q gd ID = 50A Turn-On Delay Time t d(on) 11 20 Rise Time t r VDD = 15V, RL = 15Ω 11 20 ns Turn-Off Delay Time t d(off) ID ≈ 1A, VGEN = 10V 48 80 Fall Time t f R G = 6Ω 15 30 Input Capacitance C iss VGS = 0V – 1850 – Output Capacitance C oss VDS = 15V – 315 – pF Reverse Transfer Capacitance C rss f = 1.0MHZ – 145 – Source-Drain Reverse Recovery Time t rr IF = 25A, di/dt = 100A/µs 160 ns Note: (1) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2% G D S VIN VDD VGEN R G R D VOUT DUT Input, VIN td(on) Output, VOUT ton tr td(off) toff tf INVERTED 90% 10%10% 90 % 50% 50% 10% 90% PULSE WIDTH Switching Test Circuit Switching Waveforms

Fig. 1 – Output Characteristics ID -- Drain Source Current (A) VDS -- Drain-to-Source Voltage (V) 0.01 0.015 0.005 0.02 0.025 0.03 0 20 40 60 80 100 Fig. 4 – On-Resistance vs. Drain Current R DS(ON) -- On-Resistance (Ω ) ID -- Drain Current (A) 123 45 Fig. 2 – Transfer Characteristics ID -- Drain Current (A) 2.5V 0.6 1.2 1.4 1.6 0.8 --50 --25 25 50 75 100 125 1500 R DS(ON) -- On-Resistance (Normalized) TJ -- Junction Temperature (°C) Fig. 5 – On-Resistance vs. Junction Temperature VGS = 10V ID = 30A 6.0V 10V TJ = 125°C --55°C 3.0V 4.0V 4.5V 3.5V 5.0V 25°C VDS = 10V VGS = 4.5V VGS -- Gate-to-Source Voltage (V) 0.8 0.6 0.4 1.2 1.4 --50 --25 25 50 75 100 125 1500 VGS(th) -- Threshold Voltage (Normalized) TJ -- Junction Temperature (°C) Fig. 3 – Threshold Voltage vs. Temperature ID = 250µA VGS =10V Ratings and Characteristic Curves(TA = 25°C unless otherwise noted) GFP60N03 N-Channel Enhancement-Mode MOSFET

Fig. 8 – Capacitance C iss C rss C oss f = 1MHZ VGS = 0V 01 0 2 0 3 5 30 Fig. 7 – Gate Charge VDS = 15V ID = 15A 0.01 0.1 100 TJ = 125°C Fig. 9 – Source-Drain Diode Forward Voltage 25°C --55°C VGS = 0V IS -- Source Current (A) VSD -- Source-to-Drain Voltage (V) Q g -- Charge (nC) VGS -- Gate-to-Source Voltage (V) C -- Capacitance (pF) VDS -- Drain-to-Source Voltage (V) 0.005 0.01 0.02 0.03 0.04 0.015 0.025 0.035 2468 1 0 Fig. 6 – On-Resistance vs. Gate-to-Source Voltage R DS(ON) -- On-Resistance (Ω ) VGS -- Gate-to-Source Voltage (V) ID = 30A 25°C TJ = 125°C Ratings and Characteristic Curves(TA = 25°C unless otherwise noted) GFP60N03 N-Channel Enhancement-Mode MOSFET

Characteristic Curves(TA = 25°C unless otherwise noted) GFP60N03 N-Channel Enhancement-Mode MOSFET Fig. 11 – Transient Thermal Impedance 0.01 0.1 0.10.010.0010.0001 1 10 Fig. 12 – Power vs. Pulse Duration 0.001 0.010.0001 200 400 600 800 1000 0.1 1 10 1. Duty Cycle, D = t1/t2 2. RθJC(t) = RθJC(norm) *RθJC 3. RθJC = 2.0°C/W 4. TJ -- TC = PDM * RθJC(t) Single Pulse R θJC = 2.0°C/W TC = 25°C Pulse Duration (sec.) Power (W) Pulse Duration (sec.) R θJA(norm) -- Normalized Thermal Impedance 1.15 1.1 1.05 0.95 0.9 --50 --25 25 50 75 100 1250 Fig. 10 – Breakdown Voltage vs. Junction Temperature 150 ID = 250µA BV DSS -- Breakdown Voltage (Normalized) TJ -- Junction Temperature (°C) Fig. 13 – Maximum Safe Operating Area VDS -- Drain-Source Voltage (V) 0.1 100 1000 10 100 ID -- Drain Current (A) 1ms VGS = 10V Single Pulse R θJC = 2.0°C/W TC = 25°C DC R DS(ON) Limit 10ms 1ms 100 µs 100ms