GFP50N03 GE | Alldatasheet

Document overview

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Technical content

Features

  • Advanced Process Technology
  • High Density Cell Design for Ultra Low On-Resistance
  • Specially Designed for Low Voltage DC/DC Converters
  • Fast Switching for High Efficiency Mechanical Data Case: JEDEC TO-220AB molded plastic body Terminals:Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Mounting Torque:10 in-lbs maximum Weight:2.0g 0.154 (3.91) 0.142 (3.60)Dia. 0.560 (14.22) 0.530 (13.46) GDS 1.148 (29.16) 1.118 (28.40) 0.022 (0.56) 0.014 (0.36) 0.113 (2.87) 0.102 (2.56) 0.205 (5.20) 0.190 (4.83) 0.360 (9.14) 0.330 (8.38) PIN 0.415 (10.54) Max. 0.105 (2.67) 0.095 (2.41) D 0.155 (3.93) 0.134 (3.40) 0.635 (16.13) 0.580 (14.73) 0.410 (10.41) 0.350 (8.89) 0.160 (4.06) 0.09 (2.28) 0.037 (0.94) 0.026 (0.66) 0.603 (15.32) 0.573 (14.55) 0.185 (4.70) 0.170 (4.31) 0.055 (1.39) 0.045 (1.14) 0.104 (2.64) 0.094 (2.39) * May be notched or flat TO-220AB G D S Dimensions in inches and (millimeters)

Electrical Characteristics(TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage BV DSS VGS = 0V, ID = 250µA3 0 –– V Gate Threshold Voltage V GS(th) VDS = VGS , ID = 250µA 1.0 – 3.0 Gate-Body Leakage I GSS VDS = 0V, VGS = ±20V –– ±100 nA Zero Gate Voltage Drain Current I DSS VDS = 30V, VGS = 0V –– 1 µA On-State Drain Current(1) ID(on) VDS ≥ 5V, VGS = 10V 60 –– A Drain-Source On-State Resistance(1) R DS(on) VGS = 10V, ID = 25A – 11 13 m Ω VGS = 4.5V, ID = 20A – 15 20 Forward Transconductance(1) gfs VDS = 10V, ID = 25A – 40 – S Diode Forward Voltage V SD IS = 25A, VGS = 0V – 0.9 1.3 V Dynamic (1) VDS = 15V, VGS = 5V, ID = 50A – 16 22 Total Gate Charge Q g VDS = 15V, VGS = 10V – 35 60 Gate-Source Charge Q gs ID = 50A – 8 – nC Gate-Drain Charge Q gd – 6 – Turn-On Delay Time t d(on) – 11 20 Rise Time t r VDD = 15V, RL = 15Ω – 11 20 ns Turn-Off Delay Time t d(off) ID ≈ 1A, VGEN = 10V – 48 80 Fall Time t f R G = 6Ω – 15 30 Input Capacitance C iss VGS = 0V – 1850 – Output Capacitance C oss VDS = 15V – 315 – pF Reverse Transfer Capacitance C rss f = 1.0MHZ – 145 – Source-Drain Reverse Recovery Time t rr IF = 25A, di/dt = 100A/µs – 160 – ns Note: (1) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2% GFP50N03 N-Channel Enhancement-Mode MOSFET G D S VIN VDD VGEN R G R D VOUT DUT Input, VIN td(on) Output, VOUT ton tr td(off) toff tf INVERTED 90% 10%10% 90 % 50% 50% 10% 90% PULSE WIDTH Switching Test Circuit Switching Waveforms

Fig. 1 – Output Characteristics ID -- Drain Source Current (A) VDS -- Drain-to-Source Voltage (V) 0.01 0.015 0.005 0.02 0.025 0.03 0 20 40 60 80 100 Fig. 4 – On-Resistance vs. Drain Current R DS(ON) -- On-Resistance (Ω ) ID -- Drain Current (A) 123 45 Fig. 2 – Transfer Characteristics ID -- Drain Current (A) 2.5V 0.6 1.2 1.4 1.6 0.8 --50 --25 25 50 75 100 125 1500 R DS(ON) -- On-Resistance (Normalized) TJ -- Junction Temperature (°C) Fig. 5 – On-Resistance vs. Junction Temperature VGS = 10V ID = 25A 6.0V 10V TJ = 125°C --55°C 3.0V 4.0V 4.5V 3.5V 5.0V 25°C VDS = 10V VGS = 4.5V VGS -- Gate-to-Source Voltage (V) 0.8 0.6 1.2 1.4 1.6 1.8 --50 --25 25 50 75 100 125 1500 VGS(th) -- Threshold Voltage (V) TJ -- Junction Temperature (°C) Fig. 3 – Threshold Voltage vs. Temperature ID = 250µA VGS =10V GFP50N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves(TA = 25°C unless otherwise noted)

Fig. 8 – Capacitance C iss C rss C oss f = 1MHZ VGS = 0V 01 0 2 0 3 5 30 Fig. 7 – Gate Charge VDS = 15V ID = 15A 0.01 0.1 100 TJ = 125°C Fig. 9 – Source-Drain Diode Forward Voltage 25°C --55°C VGS = 0V IS -- Source Current (A) VSD -- Source-to-Drain Voltage (V) Q g -- Charge (nC) VGS -- Gate-to-Source Voltage (V) C -- Capacitance (pF) VDS -- Drain-to-Source Voltage (V) 0.005 0.01 0.02 0.03 0.04 0.015 0.025 0.035 2468 1 0 Fig. 6 – On-Resistance vs. Gate-to-Source Voltage R DS(ON) -- On-Resistance (Ω ) VGS -- Gate-to-Source Voltage (V) ID = 25A TJ = 125°C 25°C GFP50N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves(TA = 25°C unless otherwise noted)

N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves(TA = 25°C unless otherwise noted) Fig. 11 – Transient Thermal Impedance Fig. 13 – Maximum Safe Operating Area ID -- Drain Current (A) VDS -- Drain-Source Voltage (V) 0.1 100 1000 0.01 0.1 10 100 0.10.010.0010.0001 1 10 Fig. 12 – Power vs. Pulse Duration VGS = 10V Single Pulse R θJC = 2.0°C/W TA = 25°C R DS(ON) Limit 100 µs 1ms 10m s DC 100ms 0.001 0.010.0001 200 400 600 800 1000 0.1 1 10 1. Duty Cycle, D = t1/t2 2. RθJA(t) = RθJA(norm) *RθJA 3. RθJA = 2.0°C/W 4. TJ -- TA = PDM * RθJA(t) --50 --25 25 50 75 100 1250 Fig. 10 – Breakdown Voltage vs. Junction Temperature 150 ID = 250µA BV DSS -- Breakdown Voltage (V) TJ -- Junction Temperature (°C) Single Pulse R θJA = 2.0°C/W TC = 25°C Pulse Duration (sec.) Power (W) Pulse Duration (sec.) R θJA(norm) -- Normalized Thermal Impedance