GFC9120 GSG | Alldatasheet
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Gunter Semiconductor GmbH Gunter Semiconductor GmbH Gunter Semiconductor GmbH Gunter Semiconductor GmbH GFC9120 P Channel Power MOSFET Chip Specification General Description: * Advanced Process Technology * Dynamic dV/dt Rating * 175℃℃ ℃℃ Operating Temperature * Fast Switching * Fully Avalanche Rated Mechanical Data: D36 Dimension 2.41mm x 2.90mm Thickness: 400 µµ µµm Metallization: Top : : Al Backside : CrNiAg / Au Suggested Bonding Conditions: Die Mounting: Solder Perform 95/5 PbSn or 92.5./2.5/5 PbAgIn Source Bonding Wire: 8 mil Al Absolute Maximum Rating Characteristics Symbol Limit Unit Test Conditions Drain-to-Source Breakdown Voltage -V(BR)DSS 100 V − VGS=0V, -ID=250µΑ Static Drain-to - Source On-resistance RDS(ON) 0.6 Ω − VGS=10V, - ID=4.1Α Continuous Drain current ( in target package) --ID@25℃ 6.8 A - VGS=10V Continuous Drain current ( in target package) --ID@100℃ 4.8 A - VGS=10V Operation Junction Temperatre Tj -55~175 ℃ Storage Temperature TSTR -55~175 ℃ Target Device: IRF9520 TO-220AB P D 60 W @Tc=25℃