SB320-1.8 GSG | Alldatasheet
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Technical content
SB 3XX -1.8 Chips for Schottky Diodes Chip Specification General Description: Schottky Diode chips with Mo-barrier for switch mode power rectifiers with the following features: * Guard-ring for stress protection * Extremely low forward voltage * 125 ℃℃ ℃℃ operation junction temperature * reverse avalanche behavior Mechanical Data: SB 3XX passivated Silicon Chip Demension(mm) 1,8x1,8 Thickness: 350 +- 20 µm Metallization: Top ( Anode ) : Al Ag Bottom ( Cathode) : TiNiAg Forward Current(A) 3 A Reverse Voltage (V): 23, 43, 100 V Type Chip VR(V) VF(V)@25 C IRM@VRMM size(mm) at If=1A at 25 C SB320 1,8x1,8 23 V 440mV 0,5mA SB340 1,8x1,8 43 V 600mV 0,5mA SB3100 1,8x1,8 100 V 690mV 0,5mA Note: Other voltages, Vf & Top Metal AL are available