GFC9014 GSG | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
Gunter Semiconductor GmbH Gunter Semiconductor GmbH Gunter Semiconductor GmbH Gunter Semiconductor GmbH GFC9014 P Channel Power MOSFET Chip Specification General Description: * Advanced Process Technology * Dynamic dV/dt Rating * 150℃℃ ℃℃ Operating Temperature * Fast Switching * Fully Avalanche Rated Mechanical Data: D32 Dimension 1.92mm x 2.18mm Thickness: 400 µµ µµm Metallization: Top : : Al Backside : CrNiAg / Au Suggested Bonding Conditions: Die Mounting: Solder Perform 95/5 PbSn or 92.5./2.5/5 PbAgIn Source Bonding Wire: 5 mil Al Absolute Maximum Rating Characteristics Symbol Limit Unit Test Conditions Drain-to-Source Breakdown Voltage -V(BR)DSS 60 V − VGS=0V, -ID=250µΑ Static Drain-to - Source On-resistance RDS(ON) 0.5 Ω − VGS=10V, - ID=3.1A Continuous Drain current ( in target package) --ID@25℃ 5.1 A - VGS=10V Continuous Drain current ( in target package) --ID@100℃ 3.2 A - VGS=10V Operation Junction Temperatre Tj -55~150 ℃ Storage Temperature TSTR -55~150 ℃ Target Device: IRFR9014 TO-252AA P D 25 W @Tc=25℃