GFC130 GSG | Alldatasheet
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Gunter Semiconductor GmbH Gunter Semiconductor GmbH Gunter Semiconductor GmbH Gunter Semiconductor GmbH GFC130 N Channel Power MOSFET Chip Specification General Description: * Advanced Process Technology * Dynamic dV/dt Rating * 175℃℃ ℃℃ Operating Temperature * Fast Switching * Fully Avalanche Rated Mechanical Data: D13 Dimension 2.68mm x 3.75mm Thickness: 400 µµ µµm Metallization: Top : : Al Backside : CrNiAg / Au Suggested Bonding Conditions: Die Mounting: Solder Perform 95/5 PbSn or 92.5./2.5/5 PbAgIn Source Bonding Wire: 10 mil Al Absolute Maximum Rating Characteristics Symbol Limit Unit Test Conditions Drain-to-Source Breakdown Voltage V(BR)DSS 100 V VGS=0V, ID=250µΑ Static Drain-to - Source On-resistance RDS(ON) 0.16 Ω VGS=10V, ID=9Α Continuous Drain current ( in target package) ID@25℃ 15 A VGS=10V Continuous Drain current ( in target package) ID@100℃ 11 A VGS=10V Operation Junction Tj -55~175 ℃ Storage Temperature TSTR -55~175 ℃ Target Device: IRF530 TO-220AB P D 63 W @Tc=25℃