GFC110 GSG | Alldatasheet
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Gunter Semiconductor GmbH Gunter Semiconductor GmbH Gunter Semiconductor GmbH Gunter Semiconductor GmbH GFC110 N Channel Power MOSFET with low RDS(on) Chip Specification General Description: * Advanced Process Technology * Dynamic dV/dt Rating * 175℃℃ ℃℃ Operating Temperature * Fast Switching * Fully Avalanche Rated * Low R DS(on) Mechanical Data: Dimension 1.61mm x 2.21mm Thickness: 400 µµ µµm Metallization: Top : : Al Backside : CrNiAg / Au Suggested Bonding Conditions: Die Mounting: Solder Perform 95/5 PbSn or 92.5./2.5/5 PbAgIn Source Bonding Wire: 5 mil Al Absolute Maximum Rating Characteristics Symbol Limit Unit Test Conditions Drain-to-Source Breakdown Voltage V(BR)DSS 100 V VGS=0V, ID=250µΑ Static Drain-to - Source On-resistance RDS(ON) 0.54 Ω VGS=10V, ID=3.4Α Continuous Drain current ( in target package) ID@25℃ 5.6 A VGS=10V Continuous Drain current ( in target package) ID@100℃ 4A VGS=10V Operation Junction Tj -55~175 ℃ Storage Temperature TSTR -55~175 ℃ Target Device: IRF510 TO-220AB P D 43 W @Tc=25℃