GFB50N03

GFB50N03 GE | Alldatasheet

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Fig. 1 – Output Characteristics ID -- Drain Source Current (A) VDS -- Drain-to-Source Voltage (V) 0.01 0.015 0.005 0.02 0.025 0.03 0 20 40 60 80 100 Fig. 4 – On-Resistance vs. Drain Current R DS(ON) -- On-Resistance (Ω ) ID -- Drain Current (A) 123 45 Fig. 2 – Transfer Characteristics ID -- Drain Current (A) 2.5V 0.6 1.2 1.4 1.6 0.8 --50 --25 25 50 75 100 125 1500 R DS(ON) -- On-Resistance (Normalized) TJ -- Junction Temperature (°C) Fig. 5 – On-Resistance vs. Junction Temperature VGS = 10V ID = 25A 6.0V 10V TJ = 125°C --55°C 3.0V 4.0V 4.5V 3.5V 5.0V 25°C VDS = 10V VGS = 4.5V VGS -- Gate-to-Source Voltage (V) 0.8 0.6 1.2 1.4 1.6 1.8 --50 --25 25 50 75 100 125 1500 VGS(th) -- Threshold Voltage (V) TJ -- Junction Temperature (°C) Fig. 3 – Threshold Voltage vs. Temperature ID = 250µA VGS =10V Ratings and Characteristic Curves(TA = 25°C unless otherwise noted) GFB50N03 N-Channel Enhancement-Mode MOSFET

Fig. 8 – Capacitance C iss C rss C oss f = 1MHZ VGS = 0V 01 0 2 0 3 5 30 Fig. 7 – Gate Charge VDS = 15V ID = 15A 0.01 0.1 100 TJ = 125°C Fig. 9 – Source-Drain Diode Forward Voltage 25°C --55°C VGS = 0V IS -- Source Current (A) VSD -- Source-to-Drain Voltage (V) Q g -- Charge (nC) VGS -- Gate-to-Source Voltage (V) C -- Capacitance (pF) VDS -- Drain-to-Source Voltage (V) 0.005 0.01 0.02 0.03 0.04 0.015 0.025 0.035 2468 1 0 Fig. 6 – On-Resistance vs. Gate-to-Source Voltage R DS(ON) -- On-Resistance (Ω ) VGS -- Gate-to-Source Voltage (V) ID = 25A TJ = 125°C 25°C Ratings and Characteristic Curves(TA = 25°C unless otherwise noted) GFB50N03 N-Channel Enhancement-Mode MOSFET

Characteristic Curves(TA = 25°C unless otherwise noted) GFB50N03 N-Channel Enhancement-Mode MOSFET Fig. 11 – Transient Thermal Impedance Fig. 13 – Maximum Safe Operating Area ID -- Drain Current (A) VDS -- Drain-Source Voltage (V) 0.1 100 1000 0.01 0.1 10 100 0.10.010.0010.0001 1 10 Fig. 12 – Power vs. Pulse Duration VGS = 10V Single Pulse R θJC = 2.0°C/W TA = 25°C R DS(ON) Limit 100 µs 1ms 10m s DC 100ms 0.001 0.010.0001 200 400 600 800 1000 0.1 1 10 1. Duty Cycle, D = t1/t2 2. RθJA(t) = RθJA(norm) *RθJA 3. RθJA = 2.0°C/W 4. TJ -- TA = PDM * RθJA(t) --50 --25 25 50 75 100 1250 Fig. 10 – Breakdown Voltage vs. Junction Temperature 150 ID = 250µA BV DSS -- Breakdown Voltage (V) TJ -- Junction Temperature (°C) Single Pulse R θJA = 2.0°C/W TC = 25°C Pulse Duration (sec.) Power (W) Pulse Duration (sec.) R θJA(norm) -- Normalized Thermal Impedance